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    p 26 ad

    Abstract: p60n
    Text: MN103S83D Type MN103S83D under development Internal ROM 64 K-byte Internal RAM 2 K-byte SRAM Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 25 ns (at 4.3 V to 5.5 V, 10 MHz internal regulator used) 25 ns (at 3.0 V to 3.6 V, 10 MHz)


    Original     		PDF MN103S83D QFP084-P-1818E 16-bit PX-ICE-103S52 PX-ODB103S-DO MN103SF65GBF QFP084-P-1818I MAF00014AEM p 26 ad p60n

    QFP084-P-1818I

    Abstract: MN103S83D MN103SF65GBF QFP084-P-1818E pwm 3 phase p60n
    Text: MN103S83D Type MN103S83D under development Internal ROM 64 K-byte Internal RAM 2 K-byte SRAM Package QFP084-P-1818E *Lead-free Minimum Instruction Execution Time 25 ns (at 4.3 V to 5.5 V, 10 MHz internal regulator used) 25 ns (at 3.0 V to 3.6 V, 10 MHz)


    Original     		PDF MN103S83D QFP084-P-1818E 16-bit QFP084-P-1818I MN103S83D MN103SF65GBF QFP084-P-1818E pwm 3 phase p60n