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    Untitled

    Abstract: No abstract text available
    Text: MN101E30 Series MN101E30N Type MN101E30R FLASH 508K ROM byte MN101EF30R Mask ROM Internal ROM type 928K 8K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 50 ns (at 2.2 V to 5.5 V, 20 MHz) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used


    Original     		PDF MN101E30 QFP100-P-1818B MN101E30N MN101E30R MN101EF30R

    Untitled

    Abstract: No abstract text available
    Text: MN101E30 Series MN101E30N Type MN101E30R FLASH 508K ROM byte MN101EF30R Mask ROM Internal ROM type 928K 8K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 50 ns (at 2.2 V to 5.5 V, 20 MHz) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used


    Original     		PDF MN101E30 MN101E30N MN101E30R MN101EF30R QFP100-P-1818B VDD33) PWM00, PWMN00, PWM01, PWMN01,

    Untitled

    Abstract: No abstract text available
    Text: MN101E30 Series MN101E30N Type MN101E30R FLASH 508K ROM byte MN101EF30R Mask ROM Internal ROM type 928K 8K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time QFP100-P-1818B 50 ns (at 2.2 V to 5.5 V, 20 MHz) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used


    Original     		PDF MN101E30 QFP100-P-1818B MN101E30N MN101E30R MN101EF30R VDD18 VDD33) MAD00063DEM