Untitled
Abstract: No abstract text available
Text: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.
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PDF
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MN101C39
MN101C39C
MN101CP39C
TQFP080-P-1212D
SEG19,
SEG18,
SEG17,
SEG16,
SEG15,
SEG14,
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Untitled
Abstract: No abstract text available
Text: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.
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Original
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PDF
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MN101C39
MN101C39C
TQFP080-P-1212D
MN101CP39C
SEG11,
SEG10,
MAD00015HEM
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Untitled
Abstract: No abstract text available
Text: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.
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Original
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PDF
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MN101C39
MN101C39C
TQFP080-P-1212D
MN101CP39C
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Untitled
Abstract: No abstract text available
Text: MN101C39 Series Type Internal ROM type MN101C39C MN101CP39C Mask ROM EPROM ROM byte 48K RAM (byte) 2K TQFP080-P-1212D 0.1 µs (at 4.5 V to 5.5 V, 20 MHz) 0.25 µs (at 2.7 V to 5.5 V, 8 MHz) 125 µs (at 2.0 V to 5.5 V, 32 kHz)* *: The lower limit for operation guarantee for EPROM built-in type is 2.3 V.
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Original
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PDF
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MN101C39
MN101C39C
TQFP080-P-1212D
MN101CP39C
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