Untitled
Abstract: No abstract text available
Text: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current
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Original
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PDF
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MA721WS
OD-323
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Untitled
Abstract: No abstract text available
Text: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE PINNING Applications • Super-high speed switching circuit • Small current rectification DESCRIPTION PIN 1 Cathode 2 Anode 2 1 DO Top View Marking Code: "DO" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
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Original
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PDF
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MA721WS
OD-323
OD-323
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Untitled
Abstract: No abstract text available
Text: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE PINNING Applications • Super-high speed switching circuit • Small current rectification DESCRIPTION PIN 1 Cathode 2 Anode 2 1 DO Top View Marking Code: "DO" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
|
Original
|
PDF
|
MA721WS
OD-323
OD-323
|
Untitled
Abstract: No abstract text available
Text: MA721WS SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For super-high speed switching circuit For small current rectification Absolute Maximum Ratings Tj = 25℃ Parameter Symbol Value Unit Reverse Voltage (DC) VR 30 V Peak Forward Current IFM 300 mA Average Forward Current
|
Original
|
PDF
|
MA721WS
OD-323
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