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PER.PIC. MA70013/T+KIT Radio frame; Nissan,Opel,Renault; 2 DIN; black
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MA70013/T+KIT		32		1	1 $47.8 10 $47.8 100 $47.8 1000 $47.8 10000 $47.8	Buy Now
PER.PIC. MA70011-05 Radio frame; Renault; 1 DIN; black
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MA70011-05		5		1	1 $15.06 10 $11.73 100 $11.73 1000 $11.73 10000 $11.73	Buy Now

MA7001 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA7001		Dynex	Radiation Hard 512x9 Bit FIFO		Original	PDF

MA7001 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MA7001 Abstract: l 0315 Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-5 MA7001 1015n/cm2, l 0315	PDF
GEC 44 3A Abstract: l 0315 MA7001 MAX7001 Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces January 2000 version, DS3519-5.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-5 MA7001 1015n/cm2, GEC 44 3A l 0315 MAX7001	PDF
MA7001 Abstract: MAX7001 GEC 44 3A Text: MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process	Original	MA7001 512x9 DS3519-4 MA7001 1015n/cm2, MAX7001 GEC 44 3A	PDF
UPA76ha Abstract: 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009 Text: MATCHED PAIRS & COMPOSITES Item Number Part Number Manufacturer V BR CEO hFE (V) Ic Max (A) fT (Hz) PD Max (W) Mati. Description Package Style NPN Monolithic Pairs, (Co nt' d) 5 10 BFY83 BFY83 BFY83 2N3517 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 ~S~;:~A 15	Original	BFY83 2N3517 MD8003 UPA76HA AD813 2N4044 MP312 2SC2291 uPA49A 2AD149 MA7809 MP2060-6 B1181MP BFX10 HA7808 2N4009	PDF
Untitled Abstract: No abstract text available Text: GEC PLESSEY S E M I C O N D U C T O R S DS3518-3.2 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's CMOS-SOS high perform ance, radiation hard, 3jim technology. The GPS Silicon-on-Sapphire process provides significant	OCR Scan	DS3518-3 MA7001 MA7001 1015n/cm2, MIL-STD-883 1x105 1x1012 1x1015 37bflS22	PDF
Untitled Abstract: No abstract text available Text: M GEC PLESS EY S E M I C O N D U C T O R S D S 3 5 1 8 -2 .4 MA7001 RADIATION HARD 512 X 9 BIT FIFO The MA7001 512 x 9 FIFO is manufactured using GPS's C M O S -S O S high p e rfo rm a n c e , ra d ia tio n ha rd, 3n.m technology. The GPS Silicon-on-Sapphire process provides significant	OCR Scan	MA7001 MA7001 1015n/cma, MIL-STD-883 1x105 37bflS22	PDF
Untitled Abstract: No abstract text available Text: GEC P L E SS E Y S I M I . O N I> Ii ( I ( K MA °1 Radiation Hard 5 1 2 x 9 Bit FIFO s Sn0 0 0 FD S/2 Issue 2.4 December 1990 Features D a ta In p u ts (D 0-D *) • Radiation hard C M O S -S O S technology A h W rite C on trol • Fast access time 60ns typical	OCR Scan	10errors/bitday	PDF