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    MA6X123 Search Results

    MA6X123 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA6X123 Panasonic Silicon epitaxial planar type Original PDF
    MA6X123 Panasonic Switching Diodes Original PDF
    MA6X12300L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE ARRAY 80V 100MA MINI6 Original PDF

    MA6X123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA123

    Abstract: MA6X123
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X123 (MA123) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) Maximum peak reverse voltage Forward current *1 1.50+0.25 –0.05 2 1 0.30+0.10


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    PDF 2002/95/EC) MA6X123 MA123) MA123 MA6X123

    MA123

    Abstract: MA6X123
    Text: Switching Diodes MA6X123 MA123 Silicon epitaxial planar type Unit : mm + 0.2 − 0.3 + 0.25 0.65 ± 0.15 1 • Absolute Maximum Ratings Ta = 25°C Parameter 4 3 + 0.1 0.16 − 0.06 2 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V


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    PDF MA6X123 MA123) MA123 MA6X123

    MA6X123

    Abstract: No abstract text available
    Text: Switching Diodes MA6X123 Silicon epitaxial planar type Unit : mm + 0.2 − 0.3 + 0.25 0.65 ± 0.15 1 • Absolute Maximum Ratings Ta = 25°C Parameter 4 3 + 0.1 0.16 − 0.06 2 Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM 80 V IF 100 mA


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    PDF MA6X123 MA6X123

    MA123

    Abstract: MA6X123
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X123 (MA123) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d • Features 4 Forward current


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    PDF 2002/95/EC) MA6X123 MA123) MA123 MA6X123

    MA123

    Abstract: MA6X123
    Text: Switching Diodes MA6X123 MA123 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) VR 80 V Maximum peak reverse voltage VRM 80 V 1.1+0.3 –0.1 Reverse voltage 1.1+0.2 –0.1 Unit 0 to 0.1 Rating Forward current 1 0.30+0.10 –0.05


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    PDF MA6X123 MA123) MA123 MA6X123

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X123 (MA123) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) Maximum peak reverse voltage Forward current *1 1.50+0.25 –0.05 2 1 0.30+0.10


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    PDF 2002/95/EC) MA6X123 MA123)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X123 (MA123) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 VR Maximum peak reverse voltage Forward current *1 VRM IF Peak forward current *1


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    PDF 2002/95/EC) MA6X123 MA123) SC-74

    MA6X1230G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1230G Silicon epitaxial planar type For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


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    PDF 2002/95/EC) MA6X1230G MA6X1230G

    MA123

    Abstract: MA6X123
    Text: Switching Diodes MA6X123 MA123 Silicon epitaxial planar type Unit : mm For switching circuit 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 2 1 (0.65) 3 0.30+0.10 –0.05 1.1+0.2 –0.1 Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Average forward current*1


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    PDF MA6X123 MA123) MA123 MA6X123

    MA6X1230G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1230G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuit • Package ■ Features • Code Mini6-G3 • Pin Name ue pl d in an c se ed lud


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    PDF 2002/95/EC) MA6X1230G MA6X1230G

    MA123

    Abstract: MA128 MA6X123 MA6X128
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d • Features 4 5 6 2 0.30+0.10


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    PDF 2002/95/EC) MA6X128 MA128) SC-74 MA123 MA128 MA6X123 MA6X128

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    k11 zener diode

    Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
    Text: Diodes Switching Diodes. K2 Switching Diodes . K2


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    PDF MA24D56 MA24D58 MA24D70 MA24D74 MA3D749 MA3D749A MA3D750 MA3D750A MA3D752 MA3D752A k11 zener diode zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.30+0.10 –0.05 Reverse voltage Maximum peak reverse voltage


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    PDF 2002/95/EC) MA6X128 MA128) MA6X123 MA123)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X128 (MA128) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo


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    PDF 2002/95/EC) MA6X128 MA128)

    MA6X1280G

    Abstract: M2V Package MA6X123
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Four isolated elements contained in one package, allowing highdensity mounting


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    PDF 2002/95/EC) MA6X1280G MA6X123 MA6X1280G M2V Package MA6X123

    M2V Package

    Abstract: MA6X123 MA6X128
    Text: Switching Diodes MA6X128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density


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    PDF MA6X128 MA6X123) M2V Package MA6X123 MA6X128

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    MA123

    Abstract: MA128 MA6X123 MA6X128
    Text: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction


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    PDF MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128

    MA123

    Abstract: MA128 MA6X123 MA6X128
    Text: Switching Diodes MA6X128 MA128 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 2 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 5 0.8 1.1 − 0.1 1.9 ± 0.2 0.95 0.95 6 • Four-element contained in one package, allowing high-density


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    PDF MA6X128 MA128) MA6X123 MA123) MA123 MA128 MA6X123 MA6X128

    zener diode SMD marking code 27 4F

    Abstract: smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZDxxx Series Silicon planar type 0.60±0.05 0.20±0.05 Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.12+0.05 –0.02 2 • Absolute Maximum Ratings Ta = 25°C


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    PDF 2002/95/EC) zener diode SMD marking code 27 4F smd diode schottky code marking 2F smd zener diode code 5F panasonic MSL level smd zener diode code a2 SMD ZENER DIODE a2 smd zener 27 2f SMD zener marking code 102 A2 SMD zener SMD MARK A1