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    MA4GP032 Search Results

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    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


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    Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter PDF

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


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    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


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    40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer PDF

    diode cross reference

    Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
    Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE


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    MA40401 MA40402 MA40404 MA40405 MA40406 MA40408 diode cross reference schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606 PDF

    GaAs p-i-n diodes

    Abstract: 0050II
    Text: MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Description Gallium Arsenide PIN diodes offer improved performance


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    MA4GP032

    Abstract: MA4gp030 MA4GP GaAs p-i-n diodes
    Text: m 6k ¡C41 M an A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • M ay b e D riv e n D irectly from T TL S ig n a ls • L ow S e rie s R esista n ce • F ast Sw itch in g S p e e d • N o R e v e rse B ia s R eq u ired • A v ailab le a s P assivated C h ips


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    GaAs p-i-n diodes

    Abstract: No abstract text available
    Text: MfaCCtt M an A M P company GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • May be Driven Directly from TTL Signals • Low Series Resistance • Fast Switching Speed • No Reverse Bias Required • Available as Passivated Chips Description


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    GaAs p-i-n diodes

    Abstract: No abstract text available
    Text: jyfacm MA4GP Series GaAs PIN Diodes Features • MAY BE DRIVEN DIRECTLY FROM TTL SIGNALS ■ LOW SERIES RESISTANCE ■ FAST SWITCHING SPEED ■ NO REVERSE BIAS REQUIRED ■ AVAILABLE AS PASSIVATED CHIPS Gallium Arsenide PIN diodes offer improved performance


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    GaAs p-i-n diodes

    Abstract: 20ii2
    Text: m a n A M P com pany GaAs PIN Diodes MA4GP Series V 2.00 Case Style 277 Features • • • • • May be Driven Directly from '1TL Signals Low Series Resistance Fast Switching S peed N o Reverse Hias R equired Available as Passivated Chips Description Gallium A rsenide PIN d io d es offer im p ro v e d p e rform a nce


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    MA47420-132

    Abstract: MA47054 ma8334 diode 4P604 4p60 MA4PH301 ma-47266 MA4P9 MA4P504-132 MA8334
    Text: PIN DIODE SELECTION GUIDE SILICON BEAM LEAD PIN DIODES Specifications @ T a = 25°C MODEL NUMBER VOLTAGE RATING volts MAXIMUM CAPACITANCE (PF) MA4P800 MA4P801 MA4P802 MA4P803 MA4P461 MA4P462 100 100 100 100 50 30 .025 .030 .040 .050 .070 .120 MAXIMUM Rs


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    MA4P800 MA4P801 MA4P802 MA4P803 MA4P461 MA4P462 MA4P150 MA4P151 MA4P152 MA4P153 MA47420-132 MA47054 ma8334 diode 4P604 4p60 MA4PH301 ma-47266 MA4P9 MA4P504-132 MA8334 PDF

    MA4P275S

    Abstract: MA47111 ma47047 ma4p274ck MA4P303-30 MA4P202-134 MA47054 MA47420 ma4gp030 ma-47266
    Text: PIN Diodes S E L E C T IO N G U ID E 1- 3 M O D EL N U M B ER M O D EL 1 N 5719. . . 1N5767 MA47041 MA47047 MA47053 . MA47054 MA47055 . MA47056 MA47057 . MA47058 MA47059 MA47100 MA47110 MA47111 MA47120 . MA47123 MA47200 MA47201 MA47202 MA47203 MA47204 MA47205


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    1N5767 MA47041 MA47047 MA47053 MA47054 MA47055 MA47056 MA47057 MA47058 MA47059 MA4P275S MA47111 ma4p274ck MA4P303-30 MA4P202-134 MA47420 ma4gp030 ma-47266 PDF