MARKING M5N
Abstract: No abstract text available
Text: Product specification MA3XD15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package Low VF or Low IR type: VF < 0.45 V, IR < 100 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1
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MA3XD15
OT-23
12emperature
MARKING M5N
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MARKING M5N
Abstract: IR 2802
Text: MA3XD15 Silicon epitaxial planar type For rectification For protection against reverse current Unit : mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Mini type 3-pin package • Low VF or Low IR type: VF < 0.45 V, IR < 100 µA
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MA3XD15
MARKING M5N
IR 2802
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible
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MA3XD15
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MA3XD15
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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MA3XD15
MA3XD15
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MA3XD15
Abstract: MARKING M5N
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V
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2002/95/EC)
MA3XD15
MA3XD15
MARKING M5N
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V
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MA3XD15
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MA3XD15
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit : mm 2.8 1.45 0.95 3 + 0.1 1.9 ± 0.2 1 V Repetitive peak reverse voltage VRRM 25 V Non-repetitive peak forward surge current*1 IFSM 3 A Average forward current*2 IF(AV) 1.0 A Junction temperature
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marking M5N
Abstract: MA3XD15
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit : mm 2.8 1.45 0.95 3 + 0.1 1.9 ± 0.2 1 V Repetitive peak reverse voltage VRRM 25 V Non-repetitive peak forward surge current*1 IFSM 3 A Average forward current*2 IF(AV) 1.0 A Junction temperature
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MA3XD15
marking M5N
MA3XD15
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MA3XD15
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • Forward current (Average) IF(AV) = 1 A rectification is possible
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marking M5N
Abstract: MA3XD15 M5-N
Text: Diodes SMD Type Schottky Barrier Diodes MA3XD15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package Low VF or Low IR type: VF < 0.45 V, IR < 100 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A +0.05 0.1-0.01 0-0.1
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MA3XD15
OT-23
marking M5N
MA3XD15
M5-N
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MA3XD15
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA • IF(AV) = 1 A rectification is possible
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MA3XD15
MA3XD15
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MA3XD15
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚ ue pl d in
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MA3XD15
MA3XD15
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Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • Low forward voltage: VF < 0.45 V • Small reverse current: IR < 100 µA
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3XD15 Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl lan nclu
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
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MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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U11C
Abstract: CON40A connector DB9F P02R CON34A RDR 4A P05R D72931 P06R TP212
Text: 2 1 VDD A6 P06 A5 P05 A4 P04 P03 A3 3 A1 P02 A2 4 A0 P01 5 VDD PWM1 PWM0 GND 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76 D NC A0 P0-1 NC A1 P0-2 A2 NC P0.3 A3 NC VDD PWM1 PWM0 GND NC A4 P0-4 NC A5 P0-5 NC A6 P0-6 NC U1 D7 D6
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768Kz
RSC4000
CON34A
U11C
CON40A
connector DB9F
P02R
CON34A
RDR 4A
P05R
D72931
P06R
TP212
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Untitled
Abstract: No abstract text available
Text: Characteristics Quick Reference Guide • SBD for Power Electrical characteristics Ta = 25°C VRRM IF(AV) (V) (A) 30 30 Package Single-chip type VF max. (V) 20 5 0.47 MA3D798 10 3 0.47 MA3D799 TO-220D-B1 (2-pin) 1 40 45 5 50 3 1 TO-220D-A1 (3-pin) 0.55 3
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MA2D760
MA3D761
MA2D755
MA3D756
MA3D760
MA3U760
MA3D752
MA3D752A
MA3D755
MA3U755
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