DS1125
Abstract: XN0NE92
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15
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2002/95/EC)
XN0NE92
DS1125
XN0NE92
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15 V
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2002/95/EC)
XN0NE92
DS1125
MA2ZD12
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DS1125
Abstract: MOSFET MARKING 3F XN0NE92 FET MARKING
Text: Composite Transistors XN0NE92 Silicon P-channel MOSFET FET Silicon epitaxial planar type (SBD) Unit: mm 2 10˚ (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 SBD Rating Unit VDSS −12 V VGSS ±15 V Drain current ID −1.2 A Peak drain current IDP −3 A Total power dissipation *
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XN0NE92
DS1125
MOSFET MARKING 3F
XN0NE92
FET MARKING
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