MA22D28
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching M Di ain sc te on na tin nc ue e/ d • Features Unit: mm 0.80±0.05 1.6±0.1 1 0 to 0.1 2 Rating Unit
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2002/95/EC)
MA22D28
MA22D28
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MA22D28
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching • Features 1 0 to 0.1 2.6±0.1 3.5±0.1 • Forward current IF(AV) = 1.5 A rectification is possible
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2002/95/EC)
MA22D28
MA22D28
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching • Features Unit: mm 0.80±0.05 1.6±0.1 M Di ain sc te on na tin nc ue e/ d 1 0 to 0.1 VR Repetitive peak reverse voltage
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MA22D28
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MA22D28
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA22D28 Silicon epitaxial planar type For high speed switching • Features 1 0 to 0.1 2.6±0.1 3.5±0.1 • Forward current IF(AV) = 1.5 A rectification is possible • Low forward voltage VF 2 Rating Unit VR 30 V VRRM 30 V IF(AV)
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MA22D28
MA22D28
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D28 Silicon epitaxial planar type For high speed switching • Features 1 0 to 0.1 2.6±0.1 3.5±0.1 • Forward current IF(AV) = 1.5 A rectification is possible
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MA22D28
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MA22D280G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D280G Silicon epitaxial planar type For high speed switching • Package • Forward current IF(AV) = 1.5 A rectification is possible • Low forward voltage VF
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MA22D280G
MA22D280G
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MA22D280G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D280G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package • Forward current IF(AV) = 1.5 A rectification is possible
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MA22D280G
MA22D280G
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: R1 2 4 5 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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EA-269-130322
R1245x
R1245
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: R1 2 4 0 x SERI ES 1.2A, 30V Step Down DC/DC converter NO.EA-190-111123 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a
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EA-190-111123
R1240x
Room403,
Room109,
10F-1,
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diode series are ideal for use in the power sopplies of computers and portable equipment. With package configurations that range from Mini Type:2-pin to New Mini Power Type:2-pin packages, these diodes
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OD-123)
OD-106)
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GRM31CR71E106K
Abstract: NIPPON CAPACITORS irp 942
Text: R1240x SERIES 1.2A, 30V Step Down DC_DC converter NO.EA-190-091202 OUTLINE The R1240x series are CMOS based Step down DC_DC converter. It has internal Nch high side Tr. 0.35ΩTyp. and can provide Maximum 1.2A output current. It consists of an Oscillator, a PWM control
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R1240x
EA-190-091202
35Typ.
Room403,
Room109,
GRM31CR71E106K
NIPPON CAPACITORS
irp 942
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Untitled
Abstract: No abstract text available
Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx××G/MA22D×××G Series Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power
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MA21DÃ
G/MA22DÃ
typ200
MA21D380G
MA21D382G
MA22D280G
MA22D390G
MA22D400G
MA22D410G
M00720DE
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R1240N
Abstract: KTS500B106M55N0T00 R1240N001-TR-FE R1240N001 GRM31CR71E106K NIPPON CAPACITORS MA24D60 CHEMICON Current is small or the Output Voltage is unstable irp 942
Text: R1240x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-190-101006 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a
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R1240x
EA-190-101006
Room403,
Room109,
10F-1,
R1240N
KTS500B106M55N0T00
R1240N001-TR-FE
R1240N001
GRM31CR71E106K
NIPPON CAPACITORS
MA24D60
CHEMICON Current is small or the Output Voltage is unstable
irp 942
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DFN2020-8
Abstract: EMK212 NR6020T4R7M R1245S003-E2-FE Nippon capacitors R1245N001-TR-FE
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-130322 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-130322
R1245
Room403,
Room109,
DFN2020-8
EMK212
NR6020T4R7M
R1245S003-E2-FE
Nippon capacitors
R1245N001-TR-FE
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TK11892F
Abstract: 1001BS-3R3M A914BYW-3R5M D312C D52LC MA22D28 SON3024-8 AP-513 1001BS CM105B104K25A
Text: アプリケーションマニュアル カメラライト用白色LEDドライバICのご紹介 TK11892F CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . TYPICAL APPLICATION INFORMATION 5 . PIN CONFIGURATION 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS
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TK11892F
GC3-M009
117mV(
248mV(
SON3024-8
TK11892FLEDPWM
TK11892F4LED100mA
TK11892F
1001BS-3R3M
A914BYW-3R5M
D312C
D52LC
MA22D28
SON3024-8
AP-513
1001BS
CM105B104K25A
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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Taiyo 93-R 503
Abstract: NR4018T land pattern hsop 8 nr4018 NR6020T4R7M Nippon capacitors 269111-1 R1245N001-TR-FE
Text: R1245x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-269-111130 OUTLINE The R1245x series are CMOS-based Step-down DC/DC converter with internal N-channel high side Tr. The ON resistance of the built-in high-side transistor is 0.35Ω and the R1245 can provide the maximum 1.2A output
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R1245x
EA-269-111130
R1245
Room403,
Room109,
Taiyo 93-R 503
NR4018T
land pattern hsop 8
nr4018
NR6020T4R7M
Nippon capacitors
269111-1
R1245N001-TR-FE
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R1240N
Abstract: GRM31CR71E106K R1240N001-TR-FE R1240K003-TR irp 942 NIPPON CAPACITORS SLF6045T KTS500B106M55N0T00
Text: R1240x SERIES 1.2A, 30V Step Down DC/DC converter NO.EA-190-111123 OUTLINE The R1240x series are CMOS-based Step-down DC/DC converter with internal Nch high side Tr. 0.35Ω , which can provide the maximum 1.2A output current. The ICs consists of an Oscillator, a PWM control circuit, a
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R1240x
EA-190-111123
Room403,
Room109,
R1240N
GRM31CR71E106K
R1240N001-TR-FE
R1240K003-TR
irp 942
NIPPON CAPACITORS
SLF6045T
KTS500B106M55N0T00
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Untitled
Abstract: No abstract text available
Text: New Mid-Power Low VF Schottky Barrier Diode Overview Panasonic Schottky Barrier Diodes series are ideal for power source of computers and portable equipments. Low VF design 15 to 35% lower than our conventional products reduces power consumption and enhances equipment efficiency.
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Untitled
Abstract: No abstract text available
Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx×/MA22D×× Series Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power
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MA21D×
/MA22D×
M00720CE
|
FDSE0312-2R2M
Abstract: FDSE0312 CM105X5R475K06AB LED torch LED torch CIRCUIT diagram CM21X5R TK11898A
Text: アプリケーションマニュアル フラッシュ用高輝度LEDドライバICのご紹介 TK11898AB6 CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . TYPICAL APPLICATION INFOMATION 5 . PACKAGE OUTLINE 6 . BLOCK DIAGRAM 7 . ABSOLUTE MAXIMUM RATINGS
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TK11898AB6
GC3-P016
TK11898AB61
16-bump
FC-16
FDSE0312-2R2M
FDSE0312
CM105X5R475K06AB
LED torch
LED torch CIRCUIT diagram
CM21X5R
TK11898A
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