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    M6 TRANSISTOR Search Results

    M6 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M6 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    fairchild marking codes sot-23

    Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
    Text: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -50


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    KST812M3/M4/M5/M6/M7 OT-23 KST5088 fairchild marking codes sot-23 marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component PDF

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz PDF

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


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    OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015 PDF

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


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    S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6 PDF

    BSS66

    Abstract: SOT23 M7 BSS66R BSS67 100khz 5v transistor npn transistor m6 npn BSS67R medium power switching transistors DSA003680
    Text: SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS BSS66 BSS67 ISSUE 2 – SEPTEMBER 1995 ✪ PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R - M6 M7 M8 M9 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 60


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    BSS66 BSS67 BSS66 BSS67 BSS66R BSS67R 100mA* SOT23 M7 100khz 5v transistor npn transistor m6 npn medium power switching transistors DSA003680 PDF

    QCA100AA120

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA100AA120 UL;E76102 (M) 15 (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA100AA120 E76102 AMP110 10max VCEX1200V 1sec10sec QCA100AA120 PDF

    330MAX

    Abstract: QCA100AA100
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 (M) 15 (Applications) Motor Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA100AA100 E76102 AMP110 10max VCEX1000V 1sec10sec 330MAX QCA100AA100 PDF

    QCA150AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA150AA100 UL;E76102 (M) 15 (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA150AA100 E76102 AMP110 10max VCEX1000V QCA150AA100 PDF

    QCA100AA100

    Abstract: DIODE b2x
    Text: TRANSISTOR MODULE QCA100AA100 UL;E76102 (M) 15 (Applications) Motor Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA100AA100 E76102 AMP110 10max VCEX1000V 1sec10sec QCA100AA100 DIODE b2x PDF

    QCA100AA120

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA100AA120 UL;E76102 (M) 15 (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA100AA120 E76102 AMP110 10max VCEX1200V 1sec10sec QCA100AA120 PDF

    QCA150AA120

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE QCA150AA120 UL;E76102 (M) 15 (Applications) Motor Control(VVVF), AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 25.0 3-M6 L=10max AMP110 t=0.5 30.0max E1 B1 •Maximum Ratings Unit:A (Tj=25℃ unless otherwise specified)


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    QCA150AA120 E76102 AMP110 10max VCEX1200V QCA150AA120 PDF

    330MAX

    Abstract: Diode B2x QCA150AA120
    Text: TRANSISTOR MODULE QCA150AA120 UL;E76102 (M) 108max 93±0.5 15 C1 25.0 3-M6 L=10max E1 B1 B1X •Maximum Ratings AMP110 t=0.5 Unit:A (Tj=25℃ unless otherwise specified) Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage


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    QCA150AA120 E76102 108max AMP110 10max VCEX1200V 330MAX Diode B2x QCA150AA120 PDF

    SQD400BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE(Hi-β) SQD400BA60 UL;E76102 (M) 108max 93±0.5 ● Low B EX 11.013.0 21.0 BX E 2-M4 x7.5 C 25.5max EX 29.0 2-M6 ×13 36.0max (Applications) Motor Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


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    SQD400BA60 E76102 108max VCEX600V hFE750 IC400A, 63max SQD400BA60 trr200ns) 50msec50sec PDF

    QCA200BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE(Hi-β) QCA200BA60 UL;E76102 (M) 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit:A (Tj=25℃ unless otherwise specified) Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1


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    QCA200BA60 E76102 AMP110 10max VCEX600V hFE750 50msec50sec sec50msec QCA200BA60 PDF

    SQD300AA120

    Abstract: transistor A 935 4748 sqd300aa
    Text: TRANSISTOR MODULE SQD300AA120 UL;E76102 (M) 108max 93±0.5 4-φ6.5 ● Low B EX 11.013.0 21.0 E C B 2-M4 x7.5 36.0max BX EX 29.0 2-M6 ×13 25.5max (Applications) Moter Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


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    SQD300AA120 E76102 108max VCEX1200V IC300A, 63max SQD300AA120 100msec10sec 1ms100ms IB16A transistor A 935 4748 sqd300aa PDF

    SQD300BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE(Hi-β) SQD300BA60 UL;E76102 (M) 108max 93±0.5 ● Low B EX 11.013.0 21.0 E 2-M4 x7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max (Applications) Motor Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


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    SQD300BA60 E76102 108max VCEX600V hFE750 IC300A, 63max SQD300BA60 trr200ns) di/dt-300A/ PDF

    SQD300BA60

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE(Hi-β) SQD300BA60 UL;E76102 (M) 108max 93±0.5 ● Low B EX 11.013.0 21.0 E 2-M4 x7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max (Applications) Motor Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


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    SQD300BA60 E76102 108max VCEX600V hFE750 IC300A, 63max SQD300BA60 trr200ns) di/dt-300A/ PDF

    SQD300AA100

    Abstract: No abstract text available
    Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 (M) 108max 93±0.5 4-φ6.5 ● Low B EX 11.013.0 21.0 E C B 2-M4 x7.5 36.0max BX EX 29.0 2-M6 ×13 25.5max (Applications) Moter Control(VVVF) , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application


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    SQD300AA100 E76102 108max VCEX1000V IC300A, 63max SQD300AA100 1000ms10sec 1msec100msec IB16A PDF

    QCA200BA60

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE(Hi-β) QCA200BA60 UL;E76102 (M) 15 C1 25.0 3-M6 L=10max AMP110 t=0.5 E1 B1 Unit:A (Tj=25℃ unless otherwise specified) Item VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage −IC E1 B1


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    QCA200BA60 E76102 AMP110 10max VCEX600V hFE750 di/dt-200A/ 50msec50sec sec50msec QCA200BA60 Diode B2x PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Welders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 5.4 M4 M6 Feb. 1999 ♦ MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES


    OCR Scan
    QM200HC-M PDF

    1D-S marking

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan
    KST812M3/M4/M5/M6/M7 OT-23 KST5088 KST812M3 KST812M4 KST812M5 KST812M6 KST812M7 1D-S marking PDF

    TRANSISTOR SE 135

    Abstract: transistor ark 05
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 G EN ER A L PU RPO SE TRANSISTO R SO T-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Sym bol Collector-Base Voltage Coliector-Emttter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan
    KST812M3/M4/M5/M6/M7 KST5088 KST812M KST812M4 KST812M5 KST812M6 TRANSISTOR SE 135 transistor ark 05 PDF

    M6 transistor

    Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
    Text: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation


    OCR Scan
    KST812M3/M4/M5/M6/M7 KST5088 OT-23 KST812M3 KST812M4 KST812M5 KST812M6 M6 transistor KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6 PDF