Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M6 2B TRANSISTOR Search Results

    M6 2B TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M6 2B TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    tsmc 0.18um

    Abstract: ccii CCII APPLICATION current conveyors APP4198 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters current conveyor AN4198 electrical impedance tomography
    Text: Maxim > App Notes > ASICs COMMUNICATIONS CIRCUITS MISCELLANEOUS CIRCUITS Keywords: current conveyor, current feedback, operational amplifier, ideal transistor, higher-bandwidth, CCI, RF Mixers, High-Frequency Precision Rectifiers, source follower Mar 27, 2008


    Original
    PDF com/an4198 MAX4112: MAX477: AN4198, APP4198, Appnote4198, tsmc 0.18um ccii CCII APPLICATION current conveyors APP4198 tsmc 0.18um CMOS transistor TSMC 0.18um Process parameters current conveyor AN4198 electrical impedance tomography

    2N3904

    Abstract: MMBA812M7 2N3906 TMPT4403 BC818-25 BC818-40 BC848A BC848B BC848C KST06
    Text: Surface Mount General Purpose Transistors hFE Part No., Marking Code and Polarity VC E O NPN BC848A BC848B BC848C BC818-16 BC818-25 BC818-40 MMBTA06 TMPTA06 KST06 MMBTA05 KST05 MMBT100 MMBT2222A TMPT2222A KST2222A MMBT4401 TMPT4401 KST4401 MMBT3903 KST3903


    Original
    PDF BC848A BC848B BC848C BC818-16 BC818-25 BC818-40 MMBTA06 TMPTA06 KST06 MMBTA05 2N3904 MMBA812M7 2N3906 TMPT4403 BC818-25 BC818-40 BC848A BC848B BC848C KST06

    MHW5382A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


    Original
    PDF MHW5382A/D MHW5382A MHW5382A/D* MHW5382A

    439 motorola

    Abstract: motorola 714 MHW5182A
    Text: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


    Original
    PDF MHW5182A/D MHW5182A MHW5182A/D* 439 motorola motorola 714 MHW5182A

    Diodes Marking K6

    Abstract: BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING BCV72
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan
    PDF OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 Diodes Marking K6 BCX17 Diodes Marking K7 MARKING U1 marking A06 MARKING C4 Marking H2 S4 2A S5 MARKING

    KST2222A

    Abstract: No abstract text available
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking V ce ! PNP lc h FE (V) (A) (V) KST06(1G) KST56(2G) 80 0.5 1 100 50 KST05(1H) KST55(2H) 60 0.5 1 100 50 KST2907A92F)


    OCR Scan
    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G KST2222A

    kst20

    Abstract: kst70 KST2907A KST1623L6
    Text: FUNCTION GUIDE TRANSISTORS 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors NPN KST06 1G PUP h FE Condition Device and Po arity (M arking) V ceo (V) *c <A) VCE (V) (mA) M IN Condition •c MAX VcE<sat), /BEÍsatKV) Condition


    OCR Scan
    PDF OT-23 KST56 KST55 KST2907A KSA812 KST06 KST05 KSC1623 BCW71 BCX70G kst20 kst70 KST1623L6

    BSS66

    Abstract: cg 5763 BSS66R BSS67R FMMT2369 BFQ31 BSS67 160i BC 5763 BSS69
    Text: i FERRANTI BSS66 BSS67 T IIsemiconductors L NPN Silicon Planar M e d iu m Power S w itc h in g Transistors DESCRIPTION These devices ere intended fo r general purpose switching applications. Com plementary to th e BSS69 and BSS70. Encapsulated in th e popular SOT-23 package, these


    OCR Scan
    PDF BSS66 BSS67 BSS69 BSS70. OT-23 BSS66& BSS67 FMMT2222 FMMT2369A cg 5763 BSS66R BSS67R FMMT2369 BFQ31 160i BC 5763

    KST3906 samsung

    Abstract: BCW71 AG LC-1010
    Text: SAMSUNG ELECTRONICS INC bOE D • TTbMlME 0011523 TTO HSriGK TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Condition Device and Polarity Marking NPN KST06(1G) KST05(1H) KSC1623(C1X) PNP


    OCR Scan
    PDF OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G KST3906 samsung BCW71 AG LC-1010

    1N 2907A

    Abstract: BSS65 A12 marking marking H6 sot 23 FMMT2222 PNP 2907a SOT23 FMMT2907A marking FMMT2907A 2907a BCV72
    Text: I FERRANTI FMMT2907 FMMT2907A X 11sem iconductors m P N P S ilico n Planar G eneral P urpose S w itc h in g Transistors DESCRIPTION These devices are intended fo r use in small and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to th e F M M T 2222 series


    OCR Scan
    PDF FMMT2907 FMMT2907A FMMT2222 OT-23 FMMT2907A FMMT2369A 1N 2907A BSS65 A12 marking marking H6 sot 23 PNP 2907a SOT23 marking FMMT2907A 2907a BCV72

    marking k4

    Abstract: 100az FMMT2222A BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTA N O DEVICE IDENTIFICATION TR A N SISTO R S TR A N SISTO R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW60C BCW60D BCW 61A BCW61B BCW61C BCW61D BCW 65A


    OCR Scan
    PDF OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 marking k4 100az FMMT2222A BCW33

    FMMT918

    Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
    Text: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid


    OCR Scan
    PDF FMMT918 OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT918 marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23

    TMPT404

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS 8514019 SPRAGUE. INC =53 D • G5DM33Ö 0D03b07 b ■ A L GR SE M IC O N DS /I C S SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO Device Type Marking BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D


    OCR Scan
    PDF G5DM33Ö 0D03b07 BCW29 BCW30 BCW61A BCW61B BCW61C BCW61D BCW67A BCW67B TMPT404

    marking of m7 diodes

    Abstract: BCX19 ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B
    Text: FERRANTI semiconductors BCX19 BCX20 NPN Silicon Planar M e d iu m Power Transistors DESCRIPTION These devices are intended fo r saturated sw itching, general purpose sw itching and driver applications. Com plementary to th e BCX17 and BCX18. Encapsulated in th e popular SOT-23 package these devices


    OCR Scan
    PDF BCX19 BCX20 BCX17 BCX18. OT-23 BCX20 FMMT-A13 FMMT-A14 marking of m7 diodes ferranti transistors marking jp A12 marking 2w sot-23 BCW71 marking code AD Diodes Marking K7 BCW67B

    sot 23 marking code 2t

    Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
    Text: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is


    OCR Scan
    PDF OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 BCW67C FMMT-A43 sot 23 marking code 2t marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR

    sot-23 MARKING CODE G1

    Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
    Text: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film


    OCR Scan
    PDF BFS20 OT-23 BFS20 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B FMMT-A42 sot-23 MARKING CODE G1 C5 MARKING TRANSISTOR sot 23 marking code 2t sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan
    PDF FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n

    FMMT-A42R

    Abstract: A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors FMMT-A42
    Text: FERRANTI FMMT-A42 semiconductors FMMT-A43 NPN S ilicon Planar High V oltage Transistors GENERAL DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltages, low saturation voltages and low capacitance.


    OCR Scan
    PDF FMMT-A42 FMMT-A43 FMMT-A92 FMMT-A93. OT-23 FMMT-A43 FMMT-A13 FMMT-A14 FMMT-A42R A12 marking marking of m7 diodes ferranti sot-23 Marking EJ transistor A92 BCV72 BFQ31 3E transistors

    transistor marking code 7E SOT-23

    Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
    Text: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.


    OCR Scan
    PDF BSS63 BSS64. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B transistor marking code 7E SOT-23 transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23

    marking 31A sot-23

    Abstract: marking 31A BFQ31 marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH
    Text: FERRANTI * semiconductors BFQ31 BFQ31A NPN Silicon Planar V H F /U H F Transistors DESCRIPTION These devices are intended fo r lo w noise, high frequency am plifier and o scillator applications. Encapsulated in the popular SOT-23 package these devices are designed sp ecifically fo r use in thin and thick film


    OCR Scan
    PDF BFQ31 BFQ31A OT-23 BFQ31/BFQ31A FMMT-A13 FMMT-A14 BCW67A FMMT-A20 BCW67B marking 31A sot-23 marking 31A marking 31A sot BFQ31AR BFQ31R bf031a C5 marking code device marking code S4 SOT23 marking BH

    BCV72

    Abstract: BCW29 BCW30 BCW31 BCW32 BFQ31 BFQ31A BFS20 BSS63 BSS64
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION T R A N S IS T O R S T R A N S IS T O R S Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW 60A BCW60B BCW 60C BCW 60D BCW 61A BCW61B BCW 61C


    OCR Scan
    PDF OT-23 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BSS63 BSS64 BCW32 BSS63

    MARKING CODE A06

    Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
    Text: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica­ tio n s such as Audio Frequency Am plifiers, Drivers,


    OCR Scan
    PDF FMMT-A05 FMMT-A55 FMMT-A56. OT-23 FMMT-A13 FMMT-A14 BCW67A FMMT-A20 MARKING CODE A06 marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1

    TMPT404

    Abstract: No abstract text available
    Text: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A


    OCR Scan
    PDF

    BCX17

    Abstract: BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R
    Text: FERRANTI semiconductors BCX17 BCX18 PNP Si licon Planar M e d i u m P o w e r Transistors DESCRIPTION These devices are intended for saturated sw itching, general purpose sw itch in g and driver applications. Com plem entary to the BCX19 and BCX20. Encapsulated in the popular SO T-23 package these devices


    OCR Scan
    PDF BCX17 BCX18 BCX19 BCX20. OT-23 BCX18 FMMT-A13 FMMT-A14 BCX18R marking of m7 diodes sot 23 marking code T2 sot marking t5 T4 MARKING CODE I8 SOT23 Diode marking m7 t4 u4 BCX17R