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    LP3985IM5-3.2/NOPB Texas Instruments Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
    LP2985IM5-3.2/NOPB Texas Instruments Micropower 150mA Low-Noise Ultra-Low-Dropout Regulator 5-SOT-23 -40 to 125 Visit Texas Instruments Buy
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    M532 Price and Stock

    Texas Instruments LP2985IM5-3.2/NOPB

    IC REG LINEAR 3.2V 150MA SOT23-5
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    Flip Electronics M5-320/160-7YC

    IC CPLD 320MC 7.5NS 208QFP
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    Microchip Technology Inc PM5326-FEI

    IC TELECOM INTERFACE 1292FCBGA
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    Ruland Manufacturing Co Inc PSR12-5MM-5/32"-A

    5MMX5/32" ALUMINUM BEAM CPLNG
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    Ruland Manufacturing Co Inc PSR10-4MM-5/32"-A

    4MMX5/32" ALUMINUM BEAM CPLNG
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    M532 Datasheets (314)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M-532 Littelfuse Uncategorized - Miscellaneous - SWITCH LIGHT 3POS Original PDF
    M53200P Unknown TTL Data Book 1980 Scan PDF
    M5-320/120-10HC Lattice Semiconductor 10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-10HC/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-10HI Lattice Semiconductor 10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-10HI/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-12HC Lattice Semiconductor 12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-12HC/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-12HI Lattice Semiconductor 12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-12HI/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-15HC Lattice Semiconductor 15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-15HC/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-15HI Lattice Semiconductor 15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-15HI/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-20HI Lattice Semiconductor 20ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-20HI/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-6HC Lattice Semiconductor 6ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-6HC/1 Lattice Semiconductor CPLD Original PDF
    M5-320/120-7HC Lattice Semiconductor 7ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) Original PDF
    M5-320/120-7HC/1 Lattice Semiconductor CPLD Original PDF
    ...

    M532 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53210804CY0/CT0-C DRAM MODULE M53210804CY0/CT0-C


    Original     		PDF M53210804CY0/CT0-C 8Mx32 4Mx16 M53210804CY0/CT0-C 4Mx16, 8Mx32bits 4Mx16bits

    K4E641611C

    Abstract: No abstract text available
    Text: DRAM MODULE M53230804CY0/CT0-C 4Byte 8Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230804CY0/CT0-C DRAM MODULE M53230804CY0/CT0-C


    Original     		PDF M53230804CY0/CT0-C 8Mx32 4Mx16 M53230804CY0/CT0-C 4Mx16, 8Mx32bits K4E641611C

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53230404CY0/CT0-C 4Byte 4Mx32 SIMM 4Mx16 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53230404CY0/CT0-C DRAM MODULE M53230404CY0/CT0-C


    Original     		PDF M53230404CY0/CT0-C 4Mx32 4Mx16 M53230404CY0/CT0-C 4Mx16, 4Mx32bits

    4Mx32bits

    Abstract: No abstract text available
    Text: M53230400CW0/CB0 M53230410CW0/CB0 DRAM MODULE M53230400CW0/CB0 & M53230410CW0/CB0 EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5323040 1 0C is a 4Mx32bits Dynamic RAM high density memory module. The Samsung M5323040(1)0C


    Original     		PDF M53230400CW0/CB0 M53230410CW0/CB0 M53230410CW0/CB0 M5323040 4Mx32bits 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53213200BE0/BJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.1 June 1998 DRAM MODULE M53213200BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53213200BE0/BJ0-C 32Mx32 16Mx4 M53213200BE0/BJ0-C 16Mx4, 32Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or


    Original     		PDF M53210124CE2/CJ2 M53210124CE2/CJ2 1Mx16, M53210124C 1Mx32bits M53210124C 1Mx16bits 42-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ


    Original     		PDF M53210224CW2/CB2 M53210224CW2/CB2 1Mx16, M53210224C 2Mx32bits M53210224C 1Mx16bits 42-pin 72-pin

    sot-223 code marking

    Abstract: scr SOT-23 SCR PNPN TLM532 marking codes transistors sot-223 SCR PIN CONFIGURATION CTLS5064R-M532 MARKING CFf CTLS5064-M532 marking code 8a
    Text: PRODUCT announcement Surface Mount SCR in M532 package CTLS5064-M532 CTLS5064R-M532 alternate pinout M532 Top View Sample Devices available upon request. Bottom View 3.1mm x 2.1mm x 1.0mm(H) CTLS5064-M532 CTLS5064R-M532 features • VDRM = 400V • Ideal alternative to the SOT-23 package.


    Original     		PDF TLM532 CTLS5064-M532 CTLS5064R-M532 TLM532 OT-23 OT-223 CTLS5064-M532 sot-223 code marking scr SOT-23 SCR PNPN marking codes transistors sot-223 SCR PIN CONFIGURATION CTLS5064R-M532 MARKING CFf marking code 8a

    Untitled

    Abstract: No abstract text available
    Text: M53230224DE2/DJ2 DRAM MODULE M53230224DE2/DJ2 Extended Data Out 2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53230224D is a 2Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M53230224D


    Original     		PDF M53230224DE2/DJ2 M53230224DE2/DJ2 1Mx16 M53230224D 2Mx32bits M53230224D M53230224DE2-C cycles/16ms 1Mx16bits 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53233200CE0/CJ0-C 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53233200CE0/CJ0-C DRAM MODULE M53233200CE0/CJ0-C


    Original     		PDF M53233200CE0/CJ0-C 32Mx32 16Mx4 M53233200CE0/CJ0-C 16Mx4, 32Mx32bits

    Untitled

    Abstract: No abstract text available
    Text: M53210400CW0/CB0 M53210410CW0/CB0 DRAM MODULE M53210400CW0/CB0 & M53210410CW0/CB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0C is a 4Mx32bits Dynamic RAM • Part Identification high density memory module. The Samsung M5321040(1)0C


    Original     		PDF M53210400CW0/CB0 M53210410CW0/CB0 M53210410CW0/CB0 M5321040 4Mx32bits M53210400CW0-C cycles/64ms 24-pin

    Untitled

    Abstract: No abstract text available
    Text: M53210800CW0/CB0 M53210810CW0/CB0 DRAM MODULE M53210800CW0/CB0 & M53210810CW0/CB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0C is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0C


    Original     		PDF M53210800CW0/CB0 M53210810CW0/CB0 M53210810CW0/CB0 M5321080 8Mx32bits 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: M53210800DW0/DB0 M53210810DW0/DB0 DRAM MODULE M53210800DW0/DB0 & M53210810DW0/DB0 with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321080 1 0D is a 8Mx32bits Dynamic RAM high density memory module. The Samsung M5321080(1)0D


    Original     		PDF M53210800DW0/DB0 M53210810DW0/DB0 M53210810DW0/DB0 M5321080 8Mx32bits 24-pin 72-pin

    16Mx4bits

    Abstract: No abstract text available
    Text: DRAM MODULE M53211600CE0/CJ0-C 4Byte 16Mx32 SIMM 16Mx4 base Revision 0.0 JUNE 1998 DRAM MODULE Revision History Version 0.0 (JUNE 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53211600CE0/CJ0-C DRAM MODULE M53211600CE0/CJ0-C


    Original     		PDF M53211600CE0/CJ0-C 16Mx32 16Mx4 M53211600CE0/CJ0-C 16Mx4, 16Mx32bits 16Mx4bits

    KMM5321000BV-6

    Abstract: No abstract text available
    Text: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung M5321000BV co n s is t of eig h t CMOS 1 M x 4 bit


    OCR Scan     		PDF M5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 KMM5321000BV-8 110ns 130ns 150ns KMM5321000BV KMM5321000BV-6

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 M5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


    OCR Scan     		PDF KMM5321OOOW/WG KMM5321000W 42-pin 72-pin 22/xF M5321000W-7 KMM5321000W-8 M5321000W-10

    a512K

    Abstract: KMM532512CV
    Text: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC M532512CV-6 60ns 15ns 110ns


    OCR Scan     		PDF M532512CV/CVG 001S04b KMM532512CV a512K 20-pin 72-pin 22/iF KMM532512CV-6

    "24 pin" DRAM

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232000B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS c acp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232000B 32Mx32 16Mx4 KMM53232000BK/BKG 16Mx4, KMM53232000B 32Mx32bits 16Mx4bits "24 pin" DRAM

    km416c1200aj

    Abstract: KM416C1200A
    Text: DRAM MODULE KM M5322200A W/AW G M5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung M5322200AW is a 2M bit x 32 D ynamic RAM high density m em ory module. The Samsung KM M 5322200AW consists of four CMOS


    OCR Scan     		PDF KMM5322200AW/AWG KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW 42-pin 72-pin KMM5322200AW km416c1200aj KM416C1200A

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 0014=12^ 604 « S M Ù K PRELIMINARY KM M5322000W/WG DRAM MODULES 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung M5322000W is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF M5322000W/WG KMM5322000W 42-pin 72-pin 22/iF KMM5322000W-7 M5322000W-10 KMM5322000W-8 150ns

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE / 16 Mega Byte KM M5324000CV/CVG Fast Page Mode 4Mx32 DRAM SIMM Using 4Mx1 DRAM, 5V GENERAL DESCRIPTION FEATURES The Samsung M5324000CV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung M5324000CV consists of thirty two CMOS 4Mx1bit DRAMs in 20-pin SOJ packages


    OCR Scan     		PDF M5324000CV/CVG 4Mx32 KMM5324000CV 20-pin 72-pin

    CACP

    Abstract: No abstract text available
    Text: DRAM MODULE KM M53232004B K/B KG 4Byte 32Mx32 SIMM 16Mx4 base Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE KM M53232004B K/B KG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t ELECTRONICS cacp (access time from CAS) and tAAP (access time from col. addr.) in A C CHARACTERISTICS.


    OCR Scan     		PDF M53232004B 32Mx32 16Mx4 16Mx4, KMM53232004B 32Mx32bits 16Mx4bits CACP

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES M5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns M5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns


    OCR Scan     		PDF KMM5321000AV/AVG 1Mx32 M5321000AV- KMM5321000AV- M5321000AV-10 130ns 150ns 180ns KMM5321000AV bitsx32

    Untitled

    Abstract: No abstract text available
    Text: M5328000CS/CSG KM M53281OOCS/CSG DRAM MODULE M5328000CS/CSG & M53281 OOCS/CSG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The S am su ng K M M 53 28 0 1 0 0C S is a 8M x3 2b its RAM high de nsity . Part Identification


    OCR Scan     		PDF KMM5328000CS/CSG M53281OOCS/CSG KMM5328000CS/CSG KMM53281