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Abstract: No abstract text available
Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Revision 1.2 (Mar. 11, 2008) - Modify ICC spec - Modify AC parameters Elite Semiconductor Memory Technology Inc.
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M52S64322A
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Untitled
Abstract: No abstract text available
Text: ESMT M52S64322A Revision History Revision 1.0 Jun. 07, 2007 -Original Revision 1.1 (Oct. 08, 2007) - Add -7.5 spec - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007 Revision: 1.1 1/46 ESMT M52S64322A SDRAM
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M52S64322A
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Abstract: No abstract text available
Text: ESMT M52S64322A Mobile SDRAM 512K x 32 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 2.5V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3
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M52S64322A
M52S64322A-7
133MHz
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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