Untitled
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA10703 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 3 +0.1 0.4 –0.05 ● Low IR 0.95 +0.2 IF(AV)= 500mA rectification possible 1
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MA111
MA10703
500mA
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M4R marking
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA10702 Silicon epitaxial planer type Unit : mm For high-frequency rectification 2.1±0.1 0.425 • Features IF(AV)= 500mA rectification possible ● Low IR (reverse current) type. (About 1/10 of ordinary product) +0.1 0.3–0
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MA111
MA10702
500mA
M4R marking
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 0.9±0.1 1.3±0.1 2.0±0.2 5° • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit
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MA3J702
MA10702)
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M4R marking
Abstract: MA3J702
Text: Schottky Barrier Diodes SBD MA3J702 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition
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MA3J702
M4R marking
MA3J702
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MA3X703
Abstract: M4R marking
Text: Schottky Barrier Diodes SBD MA3X703 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Unit VR 20 V Repetitive peak reverse voltage VRRM 20 V Average forward current IF(AV) 500 mA Non-repetitive peak forward surge current* IFSM 3 A Junction temperature
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MA3X703
Abo40
MA3X703
M4R marking
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary
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MA3X703
MA10703)
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M4R marking
Abstract: N-50BU
Text: 製品規格／Product Specification 品 種 名／Type Number ： ＭＡ１０７０３ 松下統一品番／Matsushita Unified Parts Number ＭＡ３Ｘ７０３ Prepared by Checked by Applied by S.MIYATA M.FUJISAWA H.SHIDOOKA Sheet No. 1/2 Established by
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MA3J702
Abstract: MA10702
Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Small reverse current I R (About 1/10 of I R of the ordinary
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MA3J702
MA10702)
MA3J702
MA10702
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MA10703
Abstract: MA3X703
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3X703
MA10703)
MA10703
MA3X703
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MA10702
Abstract: MA3J702
Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For high-frequency rectification 1.25 ± 0.1 0.425 • Features • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Low IR (reverse current) type. (About 1/10 of IR of the ordinary
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MA3J702
MA10702)
MA10702
MA3J702
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MA10703 SCHOTTKY diode
Abstract: MA10703 MA3X703
Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.25 − 0.05 0.65 ± 0.15 Reverse voltage (DC) 1.45 0.95 + 0.1 + 0.1 0.16 − 0.06 0.8 1.1 − 0.1 + 0.2 2 • Absolute Maximum Ratings Ta = 25°C
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MA3X703
MA10703)
MA10703 SCHOTTKY diode
MA10703
MA3X703
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J702
MA10702)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7020G Silicon epitaxial planar type For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J7020G
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MA10703
Abstract: MA3X703
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚
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2002/95/EC)
MA3X703
MA10703)
MA10703
MA3X703
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MA10703
Abstract: MA3X703
Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary
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MA3X703
MA10703)
MA10703
MA3X703
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MA10702
Abstract: MA3J702
Text: Schottky Barrier Diodes SBD MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Symbol Rating Unit VR 20 V Repetitive peak reverse-voltage VRRM 20 V Average forward current
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MA3J702
MA10702)
MA10702
MA3J702
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl
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2002/95/EC)
MA3X703
MA10703)
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MA10703
Abstract: MA3X703
Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible • Small reverse current I R (About 1/10 of I R of the ordinary
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MA3X703
MA10703)
MA10703
MA3X703
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MA3J7020G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J7020G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high frequency rectification • Package ■ Features • Code SMini3-F2 • Pin Name
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2002/95/EC)
MA3J7020G
MA3J7020G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3X703
MA10703)
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panasonic ma diodes sc-59 Marking
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary
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MA3X703
MA10703)
panasonic ma diodes sc-59 Marking
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MA10703
Abstract: MA3X703
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
MA3X703
MA10703)
MA10703
MA3X703
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) IF(AV) = 500 mA rectification is possible
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2002/95/EC)
MA3J702
MA10702)
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MA10702
Abstract: MA3J702
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1
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2002/95/EC)
MA3J702
MA10702)
MA10702
MA3J702
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