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    Text: S T M4439A S amHop Microelectronics C orp. Dec 15.2004 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 10 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).


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