M33 thermal
Abstract: M33-2N
Text: DC Solid State Relay M33-2N TRANSFORMER ISOLATED, HIGH SURGE CURRENT Part Number* Relay Description DC M33-2N Solid State Relay With High Surge Current Capability * * The Y suffix denotes parameters tested to MIL-R-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
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M33-2N
MIL-R-28750
DC-18
M33 thermal
M33-2N
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m33-2n
Abstract: M33 thermal pulse transformer fet M33 100 M33 transistor transistor m33
Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
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M33-2N
MIL-PRF-28750
M33-2N
M33-2N\042004\Q1
M33 thermal
pulse transformer fet
M33 100
M33 transistor
transistor m33
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Untitled
Abstract: No abstract text available
Text: Series M33-2N Transformer Isolated, High Surge Current DC Solid-State Relay Part Number* Relay Description M33-2N Solid State Relay With High Surge Current Capability * The Y suffix denotes parameters tested to MIL-PRF-28750 specifications. The W suffix denotes parameters tested to Teledyne specifications.
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M33-2N
MIL-PRF-28750
M33-2N
M33-2N\072002\Q1
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cf325
Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Text: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8
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RF420
CF414
1/16W
RF424
cf325
Broadcom EMI
NEC c5292
UE401
c5885
CF-325
CE015
CF219
I1016
C1900 PCB
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Untitled
Abstract: No abstract text available
Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6
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MMBTH10LT1
236AB)
1000MHz
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mmbth10
Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0
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MMBTH10LT1
236AB)
1000MHz
mmbth10
MMBTH10LT1
M33 thermal
marking M33
RB marking
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PT02A-10-6P Bendix
Abstract: gefran 556 M32-6-M-B07C-1-4-D-000 C08WLS PT02A-10-6P Bendix 6 pin C25WLS PC02E-12-8P VPT07RA10-6PT2 bendix PT02A KF18
Text: MELT PRESSURE TRANSDUCERS mV / V output Main features M30 The rigid stem configuration makes installation fast and easy • Pressure ranges from: 0-35 to 0-2000 bar / 0-500 to 0-30000 psi • Strain gage Wheatstone bridge • Accuracy : <±0.25% FSO H ; <±0.5% FSO (M)
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1/2-20UNF
M18x1
100bar-1500psi
1/2-20UNF
700bar
457mm
M20-8-M-P03M-1-4-0-000
3000psi
PT02A-10-6P Bendix
gefran 556
M32-6-M-B07C-1-4-D-000
C08WLS
PT02A-10-6P Bendix 6 pin
C25WLS
PC02E-12-8P
VPT07RA10-6PT2
bendix PT02A
KF18
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THERMAL Fuse m20 tf 115 c
Abstract: m33 tf 130 THERMAL Fuse m30 tf 125 c M33 thermal fuse M33 fuse m20 thermal fuse 115 THERMAL Fuse jfm m33 thermal fuse M10 microtherm m33 thermal fuse THERMAL Fuse m20
Text: Thermal Fuses JFM M Features: ● Small physical size,ensures fast response to overtemperature. ● 1A 240Vac rated ● Thermal element protected mechanically and against oxidization. ● Single shot.Non resettable. ● Accurate melting points,range from 102°C to
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240Vac
E142267
CAL0023R
4510-8800AC1
dtp-500
THERMAL Fuse m20 tf 115 c
m33 tf 130
THERMAL Fuse m30 tf 125 c
M33 thermal fuse
M33 fuse
m20 thermal fuse 115
THERMAL Fuse jfm m33
thermal fuse M10
microtherm m33 thermal fuse
THERMAL Fuse m20
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function of diac
Abstract: diac BIPOLAR block diagram of diac DIAC transistor diac BIPOLAR DIAC DATASHEET DIAC EQUIVALENT circuit half-bridge converter MOROCCO st diac
Text: VK06TL / VK06TLS ELECTRONIC DRIVER FOR TL BALLASTS DATA BRIEF TYPE VK06TL VK06TLS BV Icrms 600 V 0.7 A EMITTER SWITCH POWER OUTPUT STAGE INTEGRATED ANTIPARALLEL COLLECTOR GROUND DIODE • ACCURATE 5% PRECISION tON CONTROL ■ INTEGRATED DIAC FUNCTION
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VK06TL
VK06TLS
SO-16
VK06TL13TR
VK06TL,
function of diac
diac BIPOLAR
block diagram of diac
DIAC
transistor diac BIPOLAR
DIAC DATASHEET
DIAC EQUIVALENT circuit
half-bridge converter
MOROCCO
st diac
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Untitled
Abstract: No abstract text available
Text: Ferrites and accessories PS 9 x 3.5 Core and accessories Series/Type: B65935, B65936 Date: June 2013 Data Sheet EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.
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B65935,
B65936
B65935E0000X022
B65935E0000X033
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Untitled
Abstract: No abstract text available
Text: Ferrites and accessories PS 7.35 x 3.6 Core and accessories Series/Type: B65933, B65512 Date: June 2013 Data Sheet EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.
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B65933,
B65512
B65933A0000X022
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Untitled
Abstract: No abstract text available
Text: , LJna. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 FAX: (973) 376-8960 U.SA MJ16016 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEOOUS) = 450V(Min) • High Switching Speed APPLICATIONS
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MJ16016
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Untitled
Abstract: No abstract text available
Text: Ferrites and accessories P 14 x 8 Core and accessories Series/Type: B65541, B65542, B65545, B65549 Date: June 2013 Data Sheet EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.
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B65541,
B65542,
B65545,
B65549
B65545
B65541
B65542
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Untitled
Abstract: No abstract text available
Text: Ferrites and accessories P 11 x 7 Core and accessories Series/Type: B65531, B65532, B65535, B65539, B65806 Date: June 2013 Data Sheet EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet and the information contained therein without EPCOS’ prior express consent is prohibited.
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B65531,
B65532,
B65535,
B65539,
B65806
B65539ï
B65535
B65531
B65532
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Untitled
Abstract: No abstract text available
Text: TL760M18ĆQ1, TL760M25ĆQ1, TL760M33ĆQ1 LOWĆDROPOUT FIXEDĆVOLTAGE REGULATORS ą ą SGLS284D − OCTOBER 2005 − REVISED AUGUST 2006 D Qualified for Automotive Applications D ±3% Output Voltage Variation Across Load and Temperature D Load-Dump Protection
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TL760M18Q1,
TL760M25Q1,
TL760M33Q1
SGLS284D
500-mV
TLE4274
O-263)
TL760M
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UKA720
Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller
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TDA9150B
711002b
16-bit
7110fl2b
UKA720
TV horizontal Deflection Systems
zener diode 12c
TDA9150B
UKA716
pulse amplitude modulation using 555
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m 53206
Abstract: 53207 53206 22-PIN M33S QDG1543 VDD38
Text: M S- 53206, 53207, and 53208 SPST SOLID-STATE POWER CONTROLLERS MILITARY HIGH-CURRENT DC POWER CONTROLLERS WITH INTEGRAL SHORT CIRCUIT PROTECTION 5 3 20 7 , 53208 FEATURES • Replacements for M33, M33S, M33S-1 • SPST, Normally Open • Up to 1500 V RMS Optical Isolation
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M33S-1
m 53206
53207
53206
22-PIN
M33S
QDG1543
VDD38
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M33-2N
Abstract: MIL-R- FET m332n FIRING squib
Text: mmmss 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mm M M M W FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A
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M33-2N
MIL-R-28750.
100ns
bll2b40
M33-2N
MIL-R- FET
m332n
FIRING squib
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m 53206
Abstract: M33 thermal
Text: M i- 53206, 53207, an d 53208 SPST SOLID-STATE POWER CONTROLLERS MILITARY HIGH-CURRENT DC POWER CONTROLLERS WITH INTEGRAL SHORT CIRCUIT PROTECTION 5 3 20 7 , 53208 FEATURES • • • • • • m B B am Replacements for M33, M33S, M33S-1 SPST, Normally Open
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M33S-1
bll2b40
m 53206
M33 thermal
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Untitled
Abstract: No abstract text available
Text: WSS 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A
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M33-2N
MIL-R-28750.
bll2b40
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Untitled
Abstract: No abstract text available
Text: 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • Replaces Teledyne M33-2N • Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability • Power FET Output - Low On-state Resistance • Load Current Pulses up to 100A
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M33-2N
MIL-R-28750.
bll2b40
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Untitled
Abstract: No abstract text available
Text: jnib~ 53206, 53207, and 53208 SPST SOLID-STATE POWER CONTROLLERS MILITARY HIGH-CURRENT D C POWER CONTROLLERS WITH INTEGRAL SHORT CIRCUIT PROTECTION 5 3 2 0 7 , 5 3 2 0 8 FEATURES • • • • • • Replacements for M33, M33S, M33S-1 SPST, Normally Open
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M33S-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI DIODE MODULES RM75TC-M,-H,-24,-2H MEDIUM POWER GENERAL USE INSULATED TYPE RM75TC-M,-H,-24,-2H lo V r rm DC output cu rre n t. 150A Repetitive peak reverse voltage 4 0 0 /8 0 0 /1 2 0 0 /1 6 00 V 3 phase bridge Insulated Type
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RM75TC-M
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT4403 = 2T PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.48 0.38 i 13 . •-■!— ! Pin configuration 1 • 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.60 0.40 0.89* 2.00
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CMBT4403
23A33T4
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