M30W0R7000B1 Search Results

M30W0R7000B1 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
M30W0R7000B1		STMicroelectronics	128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory		Original	PDF
M30W0R7000B1ZAQF		STMicroelectronics	128 Mbit (8Mb x 16, Multiple Bank, Burst) 1.8V Supply Flash Memory		Original	PDF

M30W0R7000B1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CR10 Abstract: J-STD-020B M30W0R7000B1 Text: M30W0R7000T1 M30W0R7000B1 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	PDF	M30W0R7000T1 M30W0R7000B1 66MHz CR10 J-STD-020B M30W0R7000B1

Catalog Datasheet

MFG & Type

PDF

Document Tags

CR10

Abstract: J-STD-020B M30W0R7000B1
Text: M30W0R7000T1 M30W0R7000B1 128 Mbit 8Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2.24V for I/O Buffers – VPP = 12V for fast Program (optional)

Original

PDF

M30W0R7000T1 M30W0R7000B1 66MHz CR10 J-STD-020B M30W0R7000B1