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    117h68

    Abstract: CR10 J-STD-020B
    Text: M30L0R7000T1 M30L0R7000B1 128 Mbit 8Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers


    Original     		PDF M30L0R7000T1 M30L0R7000B1 54MHz 117h68 CR10 J-STD-020B

    PSRAM

    Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
    Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory


    Original     		PDF M36L0R7060T1 M36L0R7060B1 M36L0R7060T1: 88C4h M36L0R7060B1: 88C5h TFBGA88 PSRAM M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM

    PSRAM

    Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
    Text: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory


    Original     		PDF M36L0R7060T1 M36L0R7060B1 M36L0R7060T1: 88C4h M36L0R7060B1: 88C5h TFBGA88 PSRAM M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100