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    M2U PACKAGE Search Results

    M2U PACKAGE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    M2U PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M2U Package

    Abstract: No abstract text available
    Text: 2SK1605 Switching Diodes MA127 Silicon epitaxial planer type Unit : mm For switching circuits +0.2 2.8 –0.3 +0.25 0.65±0.15 ● High voltage resistance VR : 80V 3 0 to 0.05 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C Parameter Symbol Rating


    Original     		PDF 2SK1605 MA127 MA122 100mA M2U Package

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 5 2 1 (0.65) 3 0.4±0.2 4 • Four isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA6X127 MA127) MA6X122 MA122)

    M2U Package

    Abstract: MA6X122 MA6X127
    Text: Switching Diodes MA6X127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage DC VR 80 V Peak reverse voltage VRM


    Original     		PDF MA6X127 MA6X122) No10-2 M2U Package MA6X122 MA6X127

    MA6X122

    Abstract: MA6X1270G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1270G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching circuit • Package • Four isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA6X1270G MA6X122 MA6X122 MA6X1270G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 2.8+0.2 –0.3 6 5˚ 5 M Di ain sc te on na tin nc ue e/ d 4 • Four isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA6X127 MA127) MA6X122 MA122)

    MA122

    Abstract: MA127 MA6X122 MA6X127
    Text: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 1.50+0.25 –0.05 • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction


    Original     		PDF MA6X127 MA127) MA6X122 MA122) MA122 MA127 MA6X122 MA6X127

    MA6X122

    Abstract: MA6X1270G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X1270G Silicon epitaxial planar type For switching circuit • Package • Four isolated elements contained in one package, allowing highdensity mounting • Centrosymmetrical wiring, allowing to free from the taping direction


    Original     		PDF 2002/95/EC) MA6X1270G MA6X122 MA6X122 MA6X1270G

    MA122

    Abstract: MA127 MA6X122 MA6X127
    Text: Switching Diodes MA6X127 MA127 Silicon epitaxial planar type Unit : mm For switching circuits + 0.2 2.8 − 0.3 + 0.25 4 3 + 0.1 0.16 − 0.06 + 0.2 2.9 − 0.05 + 0.2 2 0.1 to 0.3 0.4 ± 0.2 Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage


    Original     		PDF MA6X127 MA127) MA6X122 MA122) MA122 MA127 MA6X122 MA6X127

    ln2054

    Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
    Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g


    Original     		PDF KG01420SX KG01421SX lN2789 KG01422SX 55HQ020 lN2128 lN2128A lN2129 lN2129A 20MA10 ln2054 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20

    SOT23 marking sk

    Abstract: 11X16 marking SK SOT23 CAT93C66LI-G
    Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16


    Original     		PDF CAT93C66, CAT93W66 CAT93C66 751BD 517AZ 511AK CAT93C66/D SOT23 marking sk 11X16 marking SK SOT23 CAT93C66LI-G

    MA122

    Abstract: MA127 MA6X122 MA6X127
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA6X127 (MA127) Silicon epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d • Features 4 5 6 2 5˚ 1


    Original     		PDF 2002/95/EC) MA6X127 MA127) MA122 MA127 MA6X122 MA6X127

    Untitled

    Abstract: No abstract text available
    Text: CAT93C66, CAT93W66 4 kb Microwire Serial CMOS EEPROM Description The CAT93C66 is a 4 kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). The CAT93W66 features x16


    Original     		PDF CAT93C66, CAT93W66 CAT93C66 CAT93W66 751BD CAT93C66/D

    L2904AV

    Abstract: L358A
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R L2904AV L358A

    l2904

    Abstract: L358 L2904AV 21 ti m5p l2904v L358A LM258p equivalent L-358 marking l358 r sensing circuit using LM358
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) l2904 L358 L2904AV 21 ti m5p l2904v L358A LM258p equivalent L-358 marking l358 r sensing circuit using LM358

    L358

    Abstract: L2904V L2904 L2904AV LM358P L358A
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R L358 L2904V L2904 L2904AV LM358P L358A

    L358

    Abstract: No abstract text available
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) L358

    L358

    Abstract: l2904 L2904AV LM258p equivalent LM358P LM358AP
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R LM2904) L358 l2904 L2904AV LM258p equivalent LM358P LM358AP

    L2904

    Abstract: No abstract text available
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S L2904

    Untitled

    Abstract: No abstract text available
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D Wide Supply Range: D description/ordering information 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ m NC 1OUT NC V CC+ NC co 4 3 2 1 20 19


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068R

    21 ti m5p

    Abstract: No abstract text available
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S 21 ti m5p

    ADM8843

    Abstract: ADM8843ACPZ-REEL7 ADM8845 CP-16-3 MO-220-VEED-2
    Text: Four White LED Backlight Driver ADM8843 FEATURES GENERAL DESCRIPTION Drives 4 LEDs from a 2.6 V to 5.5 V Li-Ion input supply 1x/1.5×/2× fractional charge pump to maximize power efficiency 0.3% typical LED current matching Up to 88% power efficiency over Li-Ion range


    Original     		PDF ADM8843 ADM8843 MO-220-VEED-2 7-17-2008-A 16-Lead CP-16-3) ADM8843ACPZ-REEL7 ADM8843EB-EVALZ D05050-0-1/11 ADM8843ACPZ-REEL7 ADM8845 CP-16-3 MO-220-VEED-2

    Untitled

    Abstract: No abstract text available
    Text: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain


    Original     		PDF LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V SLOS068S

    A03 monolithic amplifier

    Abstract: Fairchild Imaging CCD CCD422A Fairchild Imaging Contact image sensor fairchild
    Text: LDRAL Fairchild Imaging Sensors CCD422A 1024 x 1024 Element Full Frame Image Sensor FEATURES • 1024x1024 Photosite Array ■ 1iyam x 1$om Pixel ■ 15.36mm x 15.36 mm Image Area ■ 100% Fill Factor ■ Mdti-Pinned Phase MPP Option ■ Readout Noise Less Than 7 Electrons at 250k pixels/ sec


    OCR Scan     		PDF 1024x1024 CCD422Ais CCD422A 400nm. 557Tfllfl A03 monolithic amplifier Fairchild Imaging CCD Fairchild Imaging Contact image sensor fairchild

    gn2011

    Abstract: XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT
    Text: • z s K e m m m * — 5/ Mini Type 6 -p in P ackage Outline Transistors, Diodes $ .-M { 6 f t ? ) U n it i mm S E ^ O S - S I O S i) ¿ P li/ 'f y 'T -'y V -i'X T h 7 > y ' 7 J 2 m ? *k iL tm , - is . i f H ■ 43 f t I L * « T A B U S ' < 7 > r -


    OCR Scan     		PDF tiA-Ac37' MA334 MA345 MA551 MA704 MA152WA MA152WK MA153 MA151WA MA151WK gn2011 XN7602 MA151WK UN2212 1Ft 6PIN M2D Package m2b 160 le 4 5P J TRANSISTOR MARKING 3pin 20100 9YDT