28F010
Abstract: M28F010 M28F010-12 M28F010-90 M80C186
Text: M28F010 1024K 128K x 8 CMOS FLASH MEMORY Y Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 2 Second Typical Chip-Program Single High Voltage for Writing and Erasing CMOS Low Power Consumption
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PDF
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M28F010
1024K
M28F010
ER-20
ER-24
28F010
M28F010-12
M28F010-90
M80C186
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IC1431
Abstract: i28F010
Text: INTEL CORP In te l UP/PRPHLS HOE Q • Hfl2bl75 QOfilS4b 3 ■ y I P K I lL O G ilD K l« M28F010 T4<*-Y lszr? 1024K (128K x 8) CMOS FLASH MEMORY ■ Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface ■ Flash Electrical Chip-Erase
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Hfl2bl75
M28F010
1024K
M28F010
00aiSb3
402bl7S
IC1431
i28F010
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TCS 4199
Abstract: M80C186
Text: tF ^ m L O G M M V in te i M28F010 1024K 128K x 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10,000 Program/Erase Cycles Minimum
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OCR Scan
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PDF
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M28F010
1024K
M28F010
TCS 4199
M80C186
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Untitled
Abstract: No abstract text available
Text: in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 5 Second Typical ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 2 Second Typical Chip-Program ■ Single High Voltage for Writing and Erasing
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OCR Scan
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PDF
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1024K
M28F010
ER-20,
ER-24,
28F010
RR-60,
AP-316,
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271111
Abstract: No abstract text available
Text: in te i P ftiO M flN A H V M28F010 1024K 128K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m in g Algorithm
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OCR Scan
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PDF
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M28F010
1024K
M28F010
271111
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Untitled
Abstract: No abstract text available
Text: m u M /m 7 in t e i M28F010 1024K 128K x 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — Hlgh-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10,000 Program/Erase Cycles Minimum
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OCR Scan
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PDF
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M28F010
1024K
1024-Kbit
32-pin
M28F010
ER-20,
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271111
Abstract: No abstract text available
Text: ß ff iiy ß M M V in te i 1024K 128K X M28F010 8 CMOS FLASH MEMORY ETOX-III Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts Flash Electrical Chip-Erase
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OCR Scan
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PDF
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1024K
M28F010
MIL-STD-883:
M28F010
Mfl2bl75
4AEL17S
ER-20,
271111
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28F016SA
Abstract: application notes 297372 AP-610 Intel AP-701 28F008SA
Text: intei AVAILABLE APPLICATION NOTES AND ADDITIONAL DOCUMENTATION AVAILABLE APPLICATION NOTES To obtain a copy of the following application notes, call the Intel literature center at 1-800-548-4725 or contact your local Intel/Distributor field sales office and request the appropriate order number or application note number.
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AP-701,
AP-441,
M28F010
AP-444,
AP-359,
28F008SA
AP-360,
AP-375,
AP-377,
28F016SA
application notes
297372
AP-610
Intel AP-701
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intel PLD
Abstract: intel 1150 Socket PIN diagram
Text: SflE » INTEL CORP MEMORY/PLD/ • 4 ö 2 b l 7 b ODfiOTbl Û1E « I T L 2 ß lftg y M O ß S M V in t e i ¡M28F010 1024K (128K x 8 CMOS FLASH MEMORY ETOXtm-II Flash-Memory Technology — EPROM-Compatible Process Base — High-Volume Manufacturing Experience
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PDF
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M28F010
1024K
M28F010
intel PLD
intel 1150 Socket PIN diagram
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