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    M21 TRANSISTOR Search Results

    M21 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M21 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12 Vdc 500 mAdc Collector Current — Continuous


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    MMBT6427LT1 236AB) PDF

    m21 transistor

    Abstract: transistor m21 Transistor M213 M21 diode diode M21 m21 sot23 transistor MMBT6427LT1 RLF100-11/12/smd m21 sot23 I/m21 sot23 transistor I/transistor m21 sot23
    Text: LESHAN RADIO COMPANY, LTD. Darlington Transistors NPN Silicon MMBT6427LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 40 Vdc Collector–Base Voltage V CBO 40 Vdc Emitter–Base Voltage V 12


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    MMBT6427LT1 236AB) m21 transistor transistor m21 Transistor M213 M21 diode diode M21 m21 sot23 transistor MMBT6427LT1 RLF100-11/12/smd m21 sot23 I/m21 sot23 transistor I/transistor m21 sot23 PDF

    MHW5181A

    Abstract: MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID
    Text: MOTOROM SEMICONDUCTOR ,’0 TECHNICAL Order this document by MHW5142AID DATA -L The RF Line 450 MHz CAW Amplifier , MHW5142A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fi and an all gold metallization


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    MHW5142AID MHW5142A MHW5142A/D MHW5181A MHW5142A MHW5181 GP 140 300C MHW5182A MHW5142 MHW5142AID PDF

    MHW5342A

    Abstract: No abstract text available
    Text: MOTOROU. Order this document bv MHW5342ND SEMICONDUCTOR TECHNICAL DATA I I The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion-imptanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5342ND MHW5342A MHW5342AID MHW5342A PDF

    MHW5382A

    Abstract: M14 to m22 metal
    Text: MOTOROU SEMICONDUCTOR o The RF Line i450 MHz Order this document by MHW5382A/D TECHNICAL DATA I I CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metal lization


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    MHW5382A/D MHW5382A MHW5382A M14 to m22 metal PDF

    MHW5272A

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR Order this document by MHW5272A/D TECHNICAL DATA The RF Line 450 MHz CATV Amplifier I I I I ~ MHW5272A . . . designed specifically for 450 MHz CAW applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz ~ and an all gold metallization


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    MHW5272A/D MHW5272A MHW5272A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5172A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5172A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5172A/D MHW5172A MHW5172A/D* PDF

    439 motorola

    Abstract: 5Bp power mhw5342a motorola 714
    Text: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5342A/D MHW5342A MHW5342A/D* 439 motorola 5Bp power mhw5342a motorola 714 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5272A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5272A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5272A/D MHW5272A MHW5272A/D* PDF

    MHW5382A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5382A/D MHW5382A MHW5382A/D* MHW5382A PDF

    MHW5342A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5342A/D MHW5342A MHW5342A PDF

    439 motorola

    Abstract: mhw5342a
    Text: MOTOROLA Order this document by MHW5342A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5342A/D MHW5342A 439 motorola mhw5342a PDF

    439 motorola

    Abstract: motorola 714 MHW5182A
    Text: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5182A/D MHW5182A MHW5182A/D* 439 motorola motorola 714 MHW5182A PDF

    MHW5182A

    Abstract: motorola Cross Reference
    Text: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5182A/D MHW5182A MHW5182A motorola Cross Reference PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance


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    MHW5382A/D MHW5382A MHW5382A/D PDF

    MHW5182A

    Abstract: No abstract text available
    Text: MOTOROLA 450 MHz CATV Amplifier MHW5182A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization system. • Specified for 53– and 60–Channel Performance


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    MHW5182A MHW5182A PDF

    MHW5382A

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV AMPLIFIER MHW5382A . . . designed specifically for 450 MHz CATV applications. Features ion–implanted arsenic emitter transistors with 7.0 GHz fT and an all gold metallization


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    MHW5382A/D MHW5382A 10rola MHW5382A PDF

    RF power transistors cross reference

    Abstract: CATV MHW
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 45 0 MHz CATV AM PLIFIER MHW 5382A . . . designed specifically for 450 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7.0 GHz fr and an all gold metallization system. • Specified for 53- and 60-Channel Performance


    OCR Scan
    60-Channel MHWS382A MHW5382A RF power transistors cross reference CATV MHW PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5222A . . designed for broadband applications requiring low distortion characteristics. Specifically intended for CATV market requirements. Features ion-implanted arsenic emitter transistors with 7.0 GHz ft, and an all gold metallization system.


    OCR Scan
    MHW5222A 60-CHANNEL MHW5222A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier . . . designed specifically for 450 MHz CATV applications. Features ion-im ­ planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system. • Specified for 5 3 - and 60-Channel Performance


    OCR Scan
    60-Channel MHW5172A L3b7254 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Amplifier MHW5342A . . . designed specifically for 450 M Hz CATV applications. Features ion-im­ planted arsenic emitter transistors with 7.0 G H z f t and an all gold metallization system. •


    OCR Scan
    MHW5342A 60-CHANNEL MHW5342A PDF

    5182A

    Abstract: 6m15 CATV MHW 5182A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 450 MHz CATV Am plifier . . . designed specifically for 450 M Hz CATV applications. Features ion-im ­ planted arsenic emitter transistors with 7.0 G H z fT and an all gold metallization system. • Specified for 5 3 - and 60-Channel Performance


    OCR Scan
    60-Channel CTB53 5182A 6m15 CATV MHW 5182A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5182A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A m p lifie r M H W 5182A . . . designed specifically for 450 MHz CATV applications. Features io n -im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization


    OCR Scan
    MHW5182A/D 60-CHANNEL 714Y-03 MHW5182A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW5382A/D SEMICONDUCTOR TECHNICAL DATA The RF Line 4 5 0 M H z CATV A M P L IF IE R M H W 5382A . . . designed specifically for 450 MHz CATV applications. Features io n -im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization


    OCR Scan
    MHW5382A/D 60-CHANNEL 714Y-03 MHW5382A PDF