Untitled
Abstract: No abstract text available
Text: MA111 Band Switching Diodes MA75WK Silicon epitaxial planer type Unit : mm +0.2 For band switching 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 +0.2 +0.1 0.8 +0.2 1.1 –0.1 Rating 0 to 0.1 0.1 to 0.3 0.4±0.2 • Absolute Maximum Ratings Ta= 25˚C
|
Original
|
MA111
MA75WK
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URD26P72E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 782 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ463 •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URD26P72E5
RG/VQ463
RG/VQ485
S89262/U6795
26P72E5
|
PDF
|
rg 504 diode
Abstract: No abstract text available
Text: URR25P82E5 URC25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ442FP RG/VQ442 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URR25P82E5
URC25P82E5
RG/VQ442FP
RG/VQ442
P-TO220-3-31
RG/VQ/442/5/53
S89262/U6623
25P82E5
rg 504 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URR26P82E5 URC26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ442FP RG/VQ442 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URR26P82E5
URC26P82E5
RG/VQ442FP
RG/VQ442
P-TO220-3-31
RG/VQ/442/5/53
S89262/U6588
26P82E5
|
PDF
|
F 407 Diode
Abstract: DIODE FS 607
Text: URD26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ485 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URD26P82E5
RG/VQ485
S89262/U6629
26P82E5
F 407 Diode
DIODE FS 607
|
PDF
|
Kfh 505
Abstract: F207 diode
Text: URD25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ485 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URD25P82E5
RG/VQ485
S89262/U65
25P82E5
Kfh 505
F207 diode
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY37P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 204: Ω KF 37 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URY37P82E5
RG/VQ469
S89262/U6826
37P82E5
009-134-A
O-247
|
PDF
|
GH 905
Abstract: No abstract text available
Text: URF29P82E5 URW29P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 208 Ω KF 905 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ • Yqtnfykfg"dguv"TFU*qp+"kp"VQ/473"cpf"VQ/474 RG/VQ473 •"Wnvtc"nqy"icvg"ejctig RG/VQ474 • Rgtkqfke"cxcncpejg"tcvgf
|
Original
|
URF29P82E5
URW29P82E5
VQ/473
VQ/474
RG/VQ473
RG/VQ474
S89262/U6645
29P82E5
GH 905
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY34P72E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 782 X TFU*qp+ 205: Ω KF 3308 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URY34P72E5
RG/VQ469
S89262/U67
34P72E5
009-134-A
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URS24P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 5 Ω KF 30: C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ471-3-11 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URS24P82E5
RG/VQ471-3-11
RG/VQ473-3-11
24P82E5
SPS02N60C3
PG-TO-251-3-11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MA111 Band Switching Diodes MA80WA, MA80WK Silicon epitaxial planer type Unit : mm For band switching 2.1±0.1 voltage dependence of diode capacity CD ● S-Mini package, with two elements incorporated enabling down-siz- ing of the equipment and automatic insertion through taping
|
Original
|
MA111
MA80WA
MA80WK
SC-70
MA80WA,
100MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY42P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 203; Ω KF 4209 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URY42P82E5
RG/VQ469
RG-TO247
S89262/U6628
42P82E5
21-35X.
4209C
009-134-A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URR26P72E5 URC26P72E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 782 X TFU*qp+ 20;7 Ω KF 607 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf RG/VQ442/5/51 RG/VQ442 •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URR26P72E5
URC26P72E5
RG/VQ442/5/51
RG/VQ442
P-TO220-3-31
RG/VQ/442/5/53<
S89262/U6797
26P72E5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY38P72E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 782 X TFU*qp+ 204: Ω KF 38 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URY38P72E5
RG/VQ469
S89262/U67
38P72E5
009-134-A
O-247
|
PDF
|
|
|
MA3Z080D
Abstract: MA3Z080E M1X marking
Text: Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD
|
Original
|
MA3Z080D,
MA3Z080E
MA3Z080D
MA3Z080E
M1X marking
|
PDF
|
MA3X075E
Abstract: SC-59A
Text: Band Switching Diodes MA3X075E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Rating Unit Reverse voltage DC VR 35 V Forward current (DC) IF 100 mA Topr −25 to +85 °C Tstg −55 to +150 °C Operating ambient temperature* Storage temperature
|
Original
|
MA3X075E
MA3X075E
SC-59A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY69P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 2029 Ω KF 69 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Yqtnfykfg"dguv"T FU*qp+"kp"VQ"469 RG/VQ469 •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf
|
Original
|
URY69P82E5
RG/VQ469
S89262/U66
69P82E5
009-134-A
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URD42P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt VDS"B"Tjmax 872 X TFU*qp+ 203; Ω KF 4209 C Hgcvwtg • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ RG/VQ483 •"Wnvtc"nqy"icvg"ejctig • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URD42P82E5
RG/VQ483
RG/VQ485
S89262/U65
42P82E5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY43P72E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 782 X TFU*qp+ 203; Ω KF 43 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URY43P72E5
RG/VQ469
S89262/U67
43P72E5
009-134-A
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URF25P82E5 URW25P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 306 Ω KF 504 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ473 • Rgtkqfke"cxcncpejg"tcvgf RG/VQ474 •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URF25P82E5
URW25P82E5
RG/VQ473
RG/VQ474
S89262/U6643
25P82E5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URY33P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 205: Ω KF 33 C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ469 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URY33P82E5
RG/VQ469
S89262/U663:
33P82E5
009-134-A
URY31P62E5
RG/VQ/469/5/3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: URP24P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 5 Ω KF 30: C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ442 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URP24P82E5
RG/VQ442
URR24P82E5
S89262/U65
24P82E5
|
PDF
|
DD-57
Abstract: No abstract text available
Text: URD24P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg VDS"B"Tjmax 872 X TFU*qp+ 5 Ω KF 30: C • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ •"Wnvtc"nqy"icvg"ejctig RG/VQ485 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Wnvtc"nqy"ghhgevkxg"ecrcekvcpegu
|
Original
|
URD24P82E5
RG/VQ485
S89262/U65
24P82E5
DD-57
|
PDF
|
DD 607 B
Abstract: F 407 Diode
Text: URS26P82E5 Eqqn"OQUª Rqygt"Vtcpukuvqt Hgcvwtg • Pgy"tgxqnwvkqpct{"jkij"xqnvcig"vgejpqnqi{ VDS"B"Tjmax 872 X TFU*qp+ 20;7 Ω KF 607 C •"Wnvtc"nqy"icvg"ejctig RG/VQ473-3-11 • Rgtkqfke"cxcncpejg"tcvgf •"Gzvtgog"fx1fv"tcvgf • Jkij"rgcm"ewttgpv"ecrcdknkv{
|
Original
|
URS26P82E5
RG/VQ473-3-11
RG/VQ471-3-11
26P82E5
RG/VQ471/5/31
SPS04N60C3
DD 607 B
F 407 Diode
|
PDF
|
