MA4Z713
Abstract: MA4S713
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name
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2002/95/EC)
MA4Z713
MA4S713)
MA4Z713
MA4S713
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name • Two isolated elements are contained in one package, allowing
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2002/95/EC)
MA4Z713
MA4S713)
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Untitled
Abstract: No abstract text available
Text: i H IR D ANGLE PROJECTION ECWH 12362R V / 1 / 1 / 1 / 1 12392ROV 12432ROV 12472R()V 12512R()V 12562R()V 12622R()V 12682R()V 12752R()V 1 / 12822ROV 1 / 12912R()V / 1 / 1 I 1 1 / I 1 / 1 / 1 1 1 / 1 12103ROV 12113ROV 12123R()V 12133R()V 12153R()V 12163R()V
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12362R(
12392ROV
12432ROV
12472R(
0025j-j-E
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name • Two isolated elements are contained in one package, allowing
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2002/95/EC)
MA4Z7130G
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MA4Z7130G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name
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2002/95/EC)
MA4Z7130G
MA4Z7130G
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MA3X704A
Abstract: MA4X7130G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7130G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching For wave detection • Package • Two isolated elements are contained in one package, allowing
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Original
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2002/95/EC)
MA4X7130G
MA3X704A
MA4X7130G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z713 (MA4S713) Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F1 • Pin Name M Di ain sc te on na tin nc
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Original
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2002/95/EC)
MA4Z713
MA4S713)
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PDF
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MA4Z7130G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4Z7130G Silicon epitaxial planar type For switching For wave detection • Package ■ Features • Code SMini4-F2 • Pin Name Th an W is k y Th e a pro ou Fo an po du fo
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2002/95/EC)
MA4Z7130G
MA4Z7130G
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MA3X704A
Abstract: MA4X7130G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7130G Silicon epitaxial planar type For switching For wave detection • Package • Two isolated elements are contained in one package, allowing high-density mounting
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2002/95/EC)
MA4X7130G
MA3X704A
MA4X7130G
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CI 4016
Abstract: IC 4011 pin DETAIL 1N3287 h-MiLS sol 4011 be NSPE m1n code marking Scans-0015999 10 DC-1 diode
Text: MIL SPECS 44E D □ □□DIES QQ32223 T « M I L S i recH-'poiifjp | MIL-S-19500/205B 11 JUNE 1990 SUPERSEDING-MIL-S-19500/205A 16 February 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM, LOU LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV
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G0G012S
QQ32223
MIL-S-19500/205B
MIL-S-19500/205A
1N3287
MIL-S-19500.
QQ32232
MIL-S-19500/2058
5961-U61-2)
CI 4016
IC 4011 pin DETAIL
h-MiLS
sol 4011 be
NSPE
m1n code marking
Scans-0015999
10 DC-1 diode
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PDF
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8202102YX
Abstract: 8202102 TS68000MR ts68000mcb smd marking a60 TS68000MC ASUS AIA23 ts68000mrb D152J
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION Add V parameters. 1 .3 : APPROVED 1984 MAR 2 A Table I : 1.75 mW. Change Pn from 1.5 mW to u B Revise ta b le I lim it s , add 10 MHz device, revise operating temperature range, and re vise waveforms. 1985 DEC 16
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Scans-0016000
Abstract: No abstract text available
Text: MIL SPECS MME D • D0DD1EIS Q D 3 S 2 B 3 2 ■ MILS I inch -pound ~T M1L-S-19500/226B 11 JUNE 1990 SUPERSEDING MIL-S-19500/226A 22 June 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM, SWITCHING TYPE 1N3666 1 JAN, JANTX, AND JANTXV This specification Is approved for use by all Depart
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OCR Scan
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00D0125
MIL-S-19500/226B
MIL-S-19500/226A
1N3666U)
MIL-S-19500.
-55aC
HIL-S-19500/226B
S961-1161-1)
Scans-0016000
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PDF
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Untitled
Abstract: No abstract text available
Text: COUNT DESCRIPTION OF REVISIONS BY CHKD DATE I DESCRIPTION OF REVISIONS COUNT I BY CHKD DATE I AP PLIC A TIO N S T A N D A R D OPERATING TEMPERATURE RANGE STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE -55 “t TO +85 “C RATING VOLTAGE 125 V AC I¡CURRENT
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FX2-80P-0
635SH
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25ls299
Abstract: ca6E 54LS299
Text: A R EVI SI ON S G D ATE D E S C R IP T IO N LT R Delete vendor CAGE 34335. Convert to m ilitary drawing format. Delete minimum lim its from propagation delays. Add logic diagram. 1 July 1987 APPRO VED lu&yUL REV PAGE REV STATUS OF PAGES REV 10 13 12 13 14 15
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7802401RX
ISNJ54LS299J
7802401SX
ISNJ54LS299W
78024012X
ISNJ54LS299FK
7802402RX
IAM25LS299DMB
7802402SX
IAM25LS299FMB
25ls299
ca6E
54LS299
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1N277
Abstract: marking 201B 201-B Diode germanium oa
Text: I n icR -Pö u m rr MIL-S-19500/201B 25 SeDtember 1989 s u r a m m r c -kit I r i n c ft ft /OA1 a niL-i-iy3UU/CUlW 26 A p ril 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GERMANIUM TYPE IN277 JAN, JANTX, AND JANTXV T his s p e d f i C a t i o n i s approved fo r use by à !' Depart
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MIL-S-19500/201B
1N277
MIL-S-19500.
marking 201B
201-B
Diode germanium oa
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smd marking ARB
Abstract: SMD MARKING CODE A31 DSne 10 smd code marking js 68442-8 A24 SMD SMD MARKING CODE A12 11-01-0118 E1557
Text: REVISIONS DATE YR-MO-OA DESCRIPTION LTR appr o ved REV SHEET REV SHEET 22 REV STATUS OF SHEETS 23 SHEET 28 29 30 1 2 3 4 PREPARED BY PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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1990-750-527R
MIL-BUL-103.
MIL-BUL-103
1990-7S0-527R
smd marking ARB
SMD MARKING CODE A31
DSne 10
smd code marking js
68442-8
A24 SMD
SMD MARKING CODE A12
11-01-0118
E1557
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PDF
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MG8797BH
Abstract: 5962-8680901ZX 1A11 8797BH mg8797 MQ8797BH
Text: REVISIONS LTR DESCRIPTION DATE VB-MO-M APPROVED REV SHEET REV SHEET 22 23 REV STATUS O F SHEETS ?5 ?fi ?1 1 2 30 31 32 33 5 6 7 REV SHEET 3 4 PREPARED BY PMIC N/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE
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16-bit
5962-8680901YX
MQ8797BH
5962-8680901ZX
MG8797BH
1A11
8797BH
mg8797
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1750 Hz TONE dEcoder
Abstract: FX623 FX623P
Text: o w n CML Semiconductor Products PRODUCT INFORMATION -y FX623 Call Progress Tone Decoder Publication D/623/3 July 1994 Provisional Issue Features • Measures Call Progress Tone Frequencies [‘Busy’, ‘Dial’, ‘Fax-Tone’ etc.] • Custom Tone Decoder
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FX623
600jiA
D/623/3
579545MHz
FX623
FX623P
16-pin
1750 Hz TONE dEcoder
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26ls34
Abstract: H9205 marking code EY SMD SMD MARKING CODE ACQ
Text: AMD DEFENSE LOGISTICS AGENCY OE F E N S C E L E C T R O N tC S SU PPLY CENTER DAYTON, OH 4 5444-5254 REFTP TO- D E S C -E C S M s. R o o n e y /(A V 986 5 1 3 -2 9 6 -6 0 4 7 /n jj) 2 4 JUN 1992 JUL 0 9 1992 S U B JE C T : N o tice o f R e v isio n (N O R ) 5 9 6 2 - R 2 14-92 fo r S ta n d a rd iz e d
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5962-8759601EX
5962-8759601FX
5962-87596012X
IMS--64
26ls34
H9205
marking code EY SMD
SMD MARKING CODE ACQ
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PDF
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ay 9j
Abstract: MARKING CODE yac OP44 E3-E12 ITT doeh
Text: M IL SPECS IC 1 □00D15S O O ab?11!! b TDfCH-'PgUNDT MIL-M-38510/122A 15 September 1989 w n r m r n r e -MIL-M-38510/122 9 A p r i l 1980 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, HIGH SLEW RATE OPERATIONAL AMPLIFIERS, MONOLITHIC SILICON This s p e c i f i c a t i o n 1s approved f o r use by a l l Depart
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MIL-M-38510/122A
MIL-M-38510/122
a8510.
MIL-M-38510.
M111tary-dev1ce
HIL-H-38510/122A
ay 9j
MARKING CODE yac
OP44
E3-E12
ITT doeh
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PDF
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1N4306
Abstract: IC 4011 pin DETAIL 1H4306 diode 1N 4001
Text: 1» — ^ — - ri T ’TBTTnWSnrrTT I * i * w n - r w u n u | I The documentation and process I ¡conversion measures necessary to I I r run n 1 u w l f h hle kill I fwwmpi j nibii twin j 'ç » i3 iv h e*»•«»• » Ibe completed by 19 September 1991 I
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MIL-S-19500/278E
MIL-S-195OO/270D
shal78E
1N4306
IC 4011 pin DETAIL
1H4306
diode 1N 4001
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PDF
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E1116
Abstract: 10H564/BEAJC
Text: REVISIONS DATE YB-MO-OA DESCRIPTION LTR Add figure 4. Technical changes to table I . Change in terminal connections. Technical changes in 1 .3 , 1 .4 , and table I I . E d ito ria l changes throughout. A APPROVED 89 AUG 15 REV SHEET REV SHEET REV STATUS
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8772901EX
10H564/BEAJC
5962-8772901FX
10H564/BFAJC
5962-87729012X
10H564M/B2AJC
MS-904
E1116
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PDF
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500C
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA Technical changes in 1.4. Added test condition A to 4.2 and 4.3.2 step 1. Editorial changes throughout 1989 OCT 23 (1 REV SH EET R EV SH EET R EV STATUS O F SH EETS REV SH EET PMIC N/A 10 11 Y STANDARDIZED
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5962-8862701KX
54F269/BKA
5962-8862701LX
54F269/BLA
5962-88627013X
54F269/B3A
193ft
500C
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PDF
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ICM7170
Abstract: No abstract text available
Text: DESC FORM 193 MAY 86 _ i 1. _ SCOPE 1.1 Scope. This drawing describes device requirements fo r class B m icro circu its 1n accordance with 1 .2 .1 o f MiL-STD-883, "Provisions fo r the use o f MIL-STD-883 In conjunction w ith compliant non-JAN
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5962-E488
5962-8765301JX
ICM7170MDG/883B
ICM7170
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