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    M116S163AST Search Results

    M116S163AST Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M116S163AST10 Motorola DRAM Chip, 16M Synchronous DRAM Family Original PDF
    M116S163AST10R Motorola DRAM Chip, 16M Synchronous DRAM Family Original PDF
    M116S163AST12 Motorola DRAM Chip, 16M Synchronous DRAM Family Original PDF
    M116S163AST12R Motorola DRAM Chip, 16M Synchronous DRAM Family Original PDF

    M116S163AST Datasheets Context Search

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    3bs02

    Abstract: SDRAM switch MRS pq32 fast page mode dram controller M116S163AST10 MPC860 PQ-12 PQ-31 PQ-33
    Text: MOTOROLA SEMICONDUCTOR DESIGN CONCEPT DC-4/4/97 - REV 0.2 MPC8xx SDRAM Interface Gordon Lawton Motorola Ltd., East Kilbride, Scotland Introduction Column Decoder Clock Buffer CLKEN CS WE PR A10 A0-A9 BS BANK 0 2048 x 256 x 16 Sense Amplifier Data Control


    Original     		PDF DC--4/4/97 DQ0-15 PQ-33 PQ-32 PQ-31 PQ-11 PQ-12 3bs02 SDRAM switch MRS pq32 fast page mode dram controller M116S163AST10 MPC860 PQ-12 PQ-31 PQ-33

    924B

    Abstract: MC16S044T3B MC16S084T3B TSOP 50 PIN 0800C
    Text: MOTOROLA Order this document by MC16S044T3B/D SEMICONDUCTOR TECHNICAL DATA 2 x 2M x 4 MC16S044T3B Product Preview 16M Synchronous DRAM Family 2 x 1M x 8 MC16S084T3B x4, x8, x16 The family of 16M Synchronous Dynamic RAMs is fabricated using 0.45µ CMOS high–speed silicon gate process technology. It includes devices


    Original     		PDF MC16S044T3B/D MC16S044T3B MC16S084T3B MC16S044T3B MC16S084T3B M116S163AST 924B TSOP 50 PIN 0800C

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MC16S044T3B/D SEMICONDUCTOR -TECHNICAL DATA 2 X 2M X 4 MC16S044T3B Product Previe 16M Synchronous DRAM Fam ily x 4 , x 8 2 x 1M x 8 MC16S084T3B


    OCR Scan     		PDF MC16S044T3B/D MC16S044T3B MC16S084T3B 6S084T3B