M2 DIODE
Abstract: No abstract text available
Text: 100NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 and M2 package
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100NDD
M2 DIODE
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m1 250c
Abstract: No abstract text available
Text: 100NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package
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100NTD
m1 250c
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m1 250c
Abstract: No abstract text available
Text: 100 100NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Available in both M1 & M2 package
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100NTD
m1 250c
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Untitled
Abstract: No abstract text available
Text: M1 THRU M7 SURFACE MOUNT GENERAL PURPOSE PLASTIC RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Plastic package has Underwriters Laboratory
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260oC/10
MIL-STD-750,
20in2
013mm)
50mVp-p
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THRU M7
Abstract: m7 sma code m7
Text: M1 THRU M7 SURFACE MOUNT GENERAL PURPOSE PLASTIC RECTIFIERS Reverse Voltage – 50 to 1000 Volts Forward Current – 1.0 Ampere Features • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Plastic package has Underwriters Laboratory
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260oC/10
MIL-STD-750,
20in2
013mm)
50mVp-p
THRU M7
m7 sma
code m7
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A1M1
Abstract: Naina Semiconductor
Text: 25NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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25NDD
A1M1
Naina Semiconductor
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Naina Semiconductor
Abstract: M1 Package
Text: 70NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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70NDD
Naina Semiconductor
M1 Package
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Naina Semiconductor
Abstract: No abstract text available
Text: 40NDD Naina Semiconductor emiconductor Ltd. Diode – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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40NDD
Naina Semiconductor
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m1 250c
Abstract: No abstract text available
Text: 40NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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40NTD
m1 250c
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m1 250c
Abstract: No abstract text available
Text: 70NTT Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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70NTT
m1 250c
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Untitled
Abstract: No abstract text available
Text: 70NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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70NTD
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av 56
Abstract: No abstract text available
Text: 56NTT Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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56NTT
av 56
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Untitled
Abstract: No abstract text available
Text: 25NTT Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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25NTT
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Untitled
Abstract: No abstract text available
Text: 40NTT Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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40NTT
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Untitled
Abstract: No abstract text available
Text: 56NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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56NTD
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m1 250c
Abstract: No abstract text available
Text: 25NTD Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Maximum Ratings TA = 250C unless otherwise noted
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25NTD
m1 250c
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INT2095
Abstract: PEB2095 Intronic 10NF Intronic Semiconductor
Text: INT2095 Intronic Semiconductor, Inc. Up Interface Transceiver INT2095 Features Description • The Intronic Semiconductor INT2095 is a fully featured replacement for the industry standard Up interface layer-1 device. It supports loop lengths up to 2.0km over AWG24 cable and
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INT2095
INT2095
AWG24
36MHz
PEB2095
Intronic
10NF
Intronic Semiconductor
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1000C
Abstract: WM8000
Text: WM8000 Production Data Sept. 1996 Rev.2.1 Audio Processor for Cellular Radio Description Features WM8000 provides a highly integrated solution for voice band signal processing in FM cellular mobiles and handportables. The device incorporates the necessary voice and
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WM8000
WM8000
1000C
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m1 250c
Abstract: No abstract text available
Text: 100 100NTT Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance
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100NTT
m1 250c
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Untitled
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON M54/74HC692 M54/74HC693 *JÆU HC692 DECADE COUNTER/REGISTER 3-STATE HC693 4 BIT BINARY COUNTER/REGISTER (3-STATE) 1 B1N Plastic Package M1 C1 Plastic Chip Carrier Micro Package ORDERING NUMBERS: M74HCXXX C1 M54HCXXX F1 M74HCXXX M1 M74HCXXX B1N
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M54/74HC692
M54/74HC693
HC692
HC693
M74HCXXX
M54HCXXX
M54/74HC692/693
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ru cp 5 94v-0
Abstract: No abstract text available
Text: THRU M1 M7 SURFACE MOUNT GLASS PASSIVATED RECTIFIERS SMA/DO-214AC FEATURES: • Ideal for surface mount applications 0.065 1.65 0.049(1.25) • Easy pick and place • Built-in strain relief • Glass passivated Chip 0.157(3.99) MECHANICAL DATA Case : Molded plastic use UL 94V-0 recognized flame
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SMA/DO-214AC
MIL-STD-202,
ru cp 5 94v-0
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY WCO ELECTRONICS CORPORATION. COPYRIGHT 4 2 REVISIONS - - G P LTR M1 D DESCRIPTION REV PER ECR 08-00133 7 DATE DWN APVD 16JAN08 JR TM D SLEEVE 1\ STAMP AMP 1 6 -1 4 * APPROX AS SHOWN
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16JAN08
31MAR2000
250CT07
250CT07
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DINS4
Abstract: M1 transistor 8438 os Denki S-8437AF-ZA-X zt sot-89 S-8437 S-8437AF S-8438AF S-8438AF-ZB-X
Text: Contents Features. Applications. Block Diagram. Pin Assignment. Absolute Maximum Ratings.
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RCH654-101K
10/zA*
DINS4
M1 transistor
8438 os
Denki
S-8437AF-ZA-X
zt sot-89
S-8437
S-8437AF
S-8438AF
S-8438AF-ZB-X
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EUPEC tt 93 n
Abstract: EUPEC tt 93 n 14 EUPEC tt 425 n D798N LS-541 798n ls860
Text: K -O C -& 3 D 798 N EUPEC S2E D • OOQGTMti ôbE ■ UPEC Typenreihe/Type range_ D 798 N_ 400_ 800_ 1200_ 1400_ 1800 Elektrische Eigenschaften Electrical properties Höchstzulässlae Werte
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