rg10 diode
Abstract: DIODE RG10 RG10 QS6M4
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET
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QS6M4
Abstract: No abstract text available
Text: QS6M4 Transistors Small switching QS6M4 zExternal dimensions Unit : mm TSMT6 2.8 1.6 0.85 Each lead has same dimensions zApplications Load switch, inverter Abbreviated symbol : M04 zEquivalent circuit zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET
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marking v80
Abstract: transistor marking v80 ghz ne3509m04 NE3509M04-A m04 marking NE3509 HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04
NE3509M04-T2
NE3509M04-A
NE3509M04-T2-A
NE3509M04-T2B-A
PG10608EJ02V0DS
marking v80
transistor marking v80 ghz
m04 marking
NE3509
HS350
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transistor marking M04 GHZ
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2B
PG10586EJ02V0DS
transistor marking M04 GHZ
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NEC Ga FET marking L
Abstract: a 933 transisitor NT 407 F 0429 01 2701 00 NE3509M04 NE3509 cel 502 Power Transisitor 100V 2A NE3509M04-A NE3509M04-T2
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3509M04
NE3509M04-A
50pcs
NE3509M04-T2
NE3509M04-T2-A
NEC Ga FET marking L
a 933 transisitor
NT 407 F
0429 01 2701 00
NE3509M04
NE3509
cel 502
Power Transisitor 100V 2A
NE3509M04-A
NE3509M04-T2
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TRANSISTOR R57
Abstract: 0827 ne664 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2
Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 NEC's NE664M04 is fabricated using NEC's state-of-the-art
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NE664M04
OT-343
NE664M04
TRANSISTOR R57
0827
ne664
2SC5754
DCS1800
GSM1800
NE5520379A
NE663M04
NE664M04-T2
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transistor marking v79 ghz
Abstract: NE3508M04-A marking v79 ne3508m04 NE3508M04-T2-A HS350 NE3508M04-T2
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transistor marking v79 ghz
NE3508M04-A
marking v79
ne3508m04
NE3508M04-T2-A
HS350
NE3508M04-T2
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TRANSISTOR R57
Abstract: free ic 339 2SC5754 DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2 NE678M04
Text: MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR NE664M04 FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 The NE664M04 is fabricated using NEC's state-of-the-art
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NE664M04
OT-343
NE664M04
TRANSISTOR R57
free ic 339
2SC5754
DCS1800
GSM1800
NE5520379A
NE663M04
NE664M04-T2
NE678M04
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NE3508M04
Abstract: Power Transisitor 100V 2A NE3508M04-A NE3508M04-T2 NE3508M04-T2-A transisitor 02 p 67
Text: PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3508M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-mold M04 package (Pb-Free T. )
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NE3508M04
NE3508M04-A
50pcs
NE3508M04-T2
NE3508M04-T2-A
NE3508M04
Power Transisitor 100V 2A
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
transisitor 02 p 67
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HS350
Abstract: NE3519M04
Text: PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier FEATURES • Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz • Flat-lead 4-pin thin-type super minimold M04 package
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NE3519M04
R09DS0008EJ0100
NE3519M04-T2
NE3519M04-T2-A
NE3519M04-T2B
NE3519M04-T2B-A
HS350
NE3519M04
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nec v80
Abstract: transistor marking v80 ghz NE3509 HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509M04. S2P sdars lna
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
nec v80
transistor marking v80 ghz
NE3509
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509M04. S2P
sdars lna
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transistor marking v80 ghz
Abstract: HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A NE3509 DSA0029112 NE3509M04. S2P sdars lna
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
transistor marking v80 ghz
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509
DSA0029112
NE3509M04. S2P
sdars lna
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2SC5754
Abstract: DCS1800 GSM1800 NE5520379A NE663M04 NE664M04 NE664M04-T2-A NE678M04 NE68019 S21E
Text: NEC's MEDIUM POWER NPN NE664M04 SILICON HIGH FRQUENCY TRANSISTOR FEATURES • LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 1.25 0.650.65 1 NEC's NE664M04 is fabricated using NEC's state-of-the-art
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NE664M04
OT-343
NE664M04
2SC5754
DCS1800
GSM1800
NE5520379A
NE663M04
NE664M04-T2-A
NE678M04
NE68019
S21E
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NE3508M04-T2-A
Abstract: HS350 NE3508M04 NE3508M04-A NE3508M04-T2 marking v79 ne3508
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3508M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 14 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3508M04
NE3508M04-A
NE3508M04-T2
NE3508M04-T2-A
NE3508M04-T2-A
HS350
NE3508M04
NE3508M04-A
NE3508M04-T2
marking v79
ne3508
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nec v80
Abstract: NEC Ga FET marking L HS350 NE3509M04 NE3509M04-A NE3509M04-T2 NE3509M04-T2-A
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold M04 package
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NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
NE3509M04-T2B
NE3509M04-T2B-A
nec v80
NEC Ga FET marking L
HS350
NE3509M04
NE3509M04-A
NE3509M04-T2
NE3509M04-T2-A
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transistor marking R57 ghz
Abstract: TRANSISTOR R57 PU10008EJ02V0DS 2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 0.4 W FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
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2SC5754
2SC5754-T2
PU10008EJ02V0DS
transistor marking R57 ghz
TRANSISTOR R57
PU10008EJ02V0DS
2SC5434
2SC5509
2SC5753
2SC5754
2SC5754-T2
DCS1800
GSM1800
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m04 SMD
Abstract: nec smd code NE3508M04 NE321000 NE3514 NE3512S02 NE27200 ne3210s01 GHZ micro-X Package NE3509M04
Text: www.cel.com NEC Small Signal GaAs FETS Low Noise Devices Typical Specifications @ TA = 25°C Recommended Gate Gate Test NF/GA Bias Frequency Part Length Width Range Frequency VDS IDS NFOPT GA Number µm (µm) (GHz) (GHz) (V) (mA) (dB) (dB) Power Bias Chip /
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NE27200
NE321000
NE3210S01
NE4210S01
NE3503M04
NE3508M04
m04 SMD
nec smd code
NE3508M04
NE321000
NE3514
NE3512S02
NE27200
ne3210s01
GHZ micro-X Package
NE3509M04
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Untitled
Abstract: No abstract text available
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3510M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA Reference only
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NE3510M04
NE3510M04-A
NE3510M04-T2
NE3510M04-T2-A
NE3510M04-T2B
NE3510M04-T2B-A
PG10676EJ02V0DS
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transistor marking v75 ghz
Abstract: LNB ku band NE3503M04-T2B NE3503M04 NE3503M04-A HS350
Text: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain <R> NF = 0.45 dB TYP., Ga = 12.0 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04
NE3503M04-T2
NE3503M04-T2B
NE3503M04-A
NE3503M04-T2-A
NE3503M04-T2B-A
PG10456EJ03V0DS
transistor marking v75 ghz
LNB ku band
HS350
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V75 marking
Abstract: No abstract text available
Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
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NE3503M04
NE3503M04-A
NE3503M04-T2-A
IR260
HS350
V75 marking
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NE3513
Abstract: MARKING V84 NE3513M04
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3513M04 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain R09DS0028EJ0100 Rev.1.00 Oct 18, 2011 FEATURES • Low noise figure and high associated gain: NF = 0.45 dB TYP., Ga = 13 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3513M04
R09DS0028EJ0100
NE3513M04-T2
NE3513M04-T2-A
NE3513M04
NE3513
MARKING V84
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V75 marking
Abstract: NE3503M04-A transistor marking v75 ghz LNB ku band HS350 NE3503M04 NE3503M04-T2-A m04 marking V75 4pin
Text: NEC's C TO Ku BAND SUPER LOW NOISE AND NE3503M04 HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE AND HIGH ASSOCIATED GAIN: NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz • FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
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NE3503M04
NE3503M04-A
NE3503M04-T2-A
V75 marking
NE3503M04-A
transistor marking v75 ghz
LNB ku band
HS350
NE3503M04
NE3503M04-T2-A
m04 marking
V75 4pin
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microwave office
Abstract: transistor marking v75 ghz nec microwave
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3503M04 C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.55 dB TYP., Ga = 11.5 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 12 GHz
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NE3503M04
NE3503M04
NE3503M04-T2
NE3503M04-A
NE3503M04-T2-A
NE3503M04-T2B-A
microwave office
transistor marking v75 ghz
nec microwave
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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