IC LM 317
Abstract: BUH615 F312
Text: r = 7 ^ 7# S G S -T H O M S O N M@IM[I[L[I2ra M!ll £l BUH 615 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR
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BUH615
ISOWATT218
E81734
BUH615
ISOWATT218
07013b
IC LM 317
F312
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Untitled
Abstract: No abstract text available
Text: S IE M E N S SFH610A/611A/615 A/617 A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Current Transfer Ratios 110 mA: 40-320% a< 1 mA: 60% typical (>13 • Low CTR Degradation • Qood CTR Linearity Dapandlng on Forward Current • Withstand Test Voltage, 5300 VACrms
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SFH610A/611A/615
SFH6106T/ie/S6T
SFH61XA
rat15A/17A
SFH610A/11A/15A/17A
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JY 222 M capacitor
Abstract: No abstract text available
Text: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408
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b0615
Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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--25C
BD618,
Q62702-D946
Q62702-D948
Q62702-D950
Q62702-D952
Q62702-D954
611/BD
613/BD
S250C
b0615
b0613
bo 615
8 HJC
bd 426
BD 615 transistors
q62702
BD PNP
siemens 611
b0617
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TRANSISTOR BC 206 PNP
Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V
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MDC03
TRANSISTOR BC 206 PNP
Transistor BhD
Transistor BhD 15
bc 201 transistor
A 1908 transistor
SA 5881
eltec
R/transistor bc 813
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BD 61 9 40
Abstract: No abstract text available
Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase
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23StQS
617itter
BD615
Q0Q43
TcaMS25'
BD 61 9 40
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Common collector 8 bit darlington
Abstract: TB62705AF 16-Bit sipo Shift Register 8ch FET driver SOP18 TD62M8601 DIP18 darlington buffer array push-pull driver led constant current driver 500mA 8ch driver SOP18
Text: A4 Type No. Function Output Output No. of Clamp Output Voltage Current Circuite V (*A) Diode Input RasMor (O) Recommended System Power Supply Package TD62591AP Single transistor array (emitter common) 8 50 200 Not provided Free DIP 18 TD62592AP Single transistor array (emitter common)
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TD62591AP
TD62592AP
TD62S93AP/AFN
TD62594AP/AFN
TD62595AP/AF
TD62596AP/AF
TD62597AP/AF/AFN
TD62598AP/AF/AFN
TD62601P/F
TD62602P/F
Common collector 8 bit darlington
TB62705AF
16-Bit sipo Shift Register
8ch FET driver SOP18
TD62M8601
DIP18
darlington buffer array
push-pull driver
led constant current driver 500mA
8ch driver SOP18
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dip16
Abstract: TD62382AP TD62003 TD62553 DIP-16 TD62382 DIP18 BF transistor series M 615 transistor td62503p
Text: Transistor Array/Interface Driver Series Typ« No. Funcion m No. of Output Oufcut Voltag» Circuits Clamp V ceìsusKV DM* TD62001P/AP/F/AF Darlington driver emitter common) 7 TD62002P/AP/F/A F Darlington driver (emitter common) 7 TD62003P/PA/AP/APA/F/FB/AF
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TD62001P/AP/F/AF
TD62002P/AP/F/A
TD62003P/PA/AP/APA/F/FB/AF
TD62004P/PA/AP/APA/F/FB/AF
TD62006P/F
TD62007P/F
TD62008AP/F/AF
TD62064AP/APA/BP-1/F/AF/BF
TD62074P/AP/F/AF
TD62081AP/F/AF
dip16
TD62382AP
TD62003
TD62553
DIP-16
TD62382
DIP18
BF transistor series
M 615 transistor
td62503p
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6DI15S-050
Abstract: 6di15s 6DI20MS-050 1DI400MN-050 2di50z application 6DI15MS-050 6di20ms M117 M106 M115
Text: 3 BIPOLAR TR ANSISTO R M O D ULES Ratings and Specifications tj H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.
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125rC)
2DI50Z
2DI7RZ-140
2DI100Z
2DI1507
14odules
6DI10MS-050
6DI15S
6DI15MS-050
6DI20MS-050
6DI15S-050
1DI400MN-050
2di50z application
6di20ms
M117
M106
M115
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6DI15S-050
Abstract: M106 M115 M210 6DI20MS-050 1di200 1di400
Text: BIPOLAR TRANSISTO R M O D U LES Ratings and Specifications 3 H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.
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125rC)
2DI50Z
2DI7RZ-140
2DI100Z
2DI1507
1DI300Z
6DI10MS-050
6DI15S
6DI15MS-050
6DI20MS-050
6DI15S-050
M106
M115
M210
1di200
1di400
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BD618
Abstract: BD 202 transistors
Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically
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623Sb
BD612
BD616
Q62702-D947
Q62702-D949
Q62702-D951
Q62702-D953
Q62702-D955
612/BD
614/BD
BD618
BD 202 transistors
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d947
Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically
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023SbOS
BD612
BD616
Q62702-D947
Q62702-D949
Q62702-D951
Q62702-D953
Q62702-D955
fl23SbGS
000436b
d947
d949
80614
B0620
BD PNP
Q62702-D947
BD612
BD616
Q62702-D949
Q62702-D951
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equivalent transistor TT 3034
Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages
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-335/H-135/D-40
-334/H-280/D-41
-334/H-280/D-41
-334/H-28Q/D-41
L-56SW-42/H-115
L-565/W-42/H-12
OT-23,
SC-59
equivalent transistor TT 3034
transistor TT 3034
D718 transistor
D718 equivalent
transistor a769
TT 3034 transistor
transistor d718
d718* transistor
k d718
D718
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transistor GR 345
Abstract: TIC COL 02 25CC SD1495 SD1495-3 A 798 transistor
Text: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1495-3 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY
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SD1495
900-960MHZ
960MHz
SD1495-3
SD1495-3
960MHz
S88SDI4D5
transistor GR 345
TIC COL 02
25CC
A 798 transistor
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eltec
Abstract: No abstract text available
Text: ROHM Corporation representatives US and Canada Alabama (Missouri) Strategic Marketing, Huntsville, AL (205) 464-0490 Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Arizona (New Mexico, Nevada) Focus Sales, Inc., Taunton, MA (800) 933-2771
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MJD44H11
Abstract: No abstract text available
Text: rZ Z SGS-THOMSON MJD44H11 M»ILi gT! ËOÛS MJD45H11 COMPLEMENTARY SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW COLLECTOR-EMITTER SATURATION VOLTAGE . FAST SWITCHING SPEED APPLICATIONS • GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIER
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MJD44H11
MJD45H11
MJD44H11
MJD45H11.
SC36960
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PDF
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eltec
Abstract: No abstract text available
Text: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222
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rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm
Abstract: No abstract text available
Text: ROHM Group Rohm Co., Ltd. Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.
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TRANSISTOR JG 92
Abstract: IFR 730
Text: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY
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0-960MHZ
960MHz
SD14S5-03
SD1495-3
900-960MH2
960MH*
33S/S
TRANSISTOR JG 92
IFR 730
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Untitled
Abstract: No abstract text available
Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage
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KSP94
MPSA44
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400VF
Abstract: npn 10a 800v 2SC3461
Text: I Ordering num ber:EN 1596C _2SC3461 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.
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1596C
2SC3461
00V/8A
300ps
7cH707Li
DD5D114
400VF
npn 10a 800v
2SC3461
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Siemens sfh615 optocoupler
Abstract: No abstract text available
Text: SIEMENS FEATURES SFH 610/611/615 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches mm .307 (7 .8) _ .291 (7.4) * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward
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MG50M2CK2
Abstract: No abstract text available
Text: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)
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MG50M2CK2
MG50M2CK2
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TO236
Abstract: MMBTH30 to-236
Text: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25
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O-236
MMBTH10
MMBTH30
MMBTH11
TO236
to-236
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