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    M 615 TRANSISTOR Search Results

    M 615 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    M 615 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IC LM 317

    Abstract: BUH615 F312
    Text: r = 7 ^ 7# S G S -T H O M S O N M@IM[I[L[I2ra M!ll £l BUH 615 HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE# E817 3 4 (N APPLICATIONS: . HORIZONTAL DEFLECTION FOR COLOUR


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    BUH615 ISOWATT218 E81734 BUH615 ISOWATT218 07013b IC LM 317 F312 PDF

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S SFH610A/611A/615 A/617 A 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY FEATURES • High Current Transfer Ratios 110 mA: 40-320% a< 1 mA: 60% typical (>13 • Low CTR Degradation • Qood CTR Linearity Dapandlng on Forward Current • Withstand Test Voltage, 5300 VACrms


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    SFH610A/611A/615 SFH6106T/ie/S6T SFH61XA rat15A/17A SFH610A/11A/15A/17A PDF

    JY 222 M capacitor

    Abstract: No abstract text available
    Text: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408


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    b0615

    Abstract: b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - SIEMENS AKTIENGESELLSCHAF BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


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    --25C BD618, Q62702-D946 Q62702-D948 Q62702-D950 Q62702-D952 Q62702-D954 611/BD 613/BD S250C b0615 b0613 bo 615 8 HJC bd 426 BD 615 transistors q62702 BD PNP siemens 611 b0617 PDF

    TRANSISTOR BC 206 PNP

    Abstract: Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813
    Text: Transistor arrays MDC03 NPN transistor electrical characteristics unless otherwise noted, Ta = 25°C Parameter Symbol Min Collector-to-base breakdown voltage b v cbo 10 V lc = 50 jiA Collector-to-emitter breakdown voltage b v ceo 10 V lc = 1 mA HA V C b = 10 V


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    MDC03 TRANSISTOR BC 206 PNP Transistor BhD Transistor BhD 15 bc 201 transistor A 1908 transistor SA 5881 eltec R/transistor bc 813 PDF

    BD 61 9 40

    Abstract: No abstract text available
    Text: 2SC D • ô23StQS 000437^ û W S IE f i , NPN Silicon Epibase Transistors 7"’- 3 3 - 07 - 25C 0 *3 7 9 BD 611 0 - r o SIEMENS AKTIENGESELLSCHAF l î l BD 619 The transistors BD 6 1 1 , BD 6 1 3 r BD 6 1 5 , BD 6 1 7 , and BD 6 1 9 are NPN silicon epibase


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    23StQS 617itter BD615 Q0Q43 TcaMS25' BD 61 9 40 PDF

    Common collector 8 bit darlington

    Abstract: TB62705AF 16-Bit sipo Shift Register 8ch FET driver SOP18 TD62M8601 DIP18 darlington buffer array push-pull driver led constant current driver 500mA 8ch driver SOP18
    Text: A4 Type No. Function Output Output No. of Clamp Output Voltage Current Circuite V (*A) Diode Input RasMor (O) Recommended System Power Supply Package TD62591AP Single transistor array (emitter common) 8 50 200 Not provided Free DIP 18 TD62592AP Single transistor array (emitter common)


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    TD62591AP TD62592AP TD62S93AP/AFN TD62594AP/AFN TD62595AP/AF TD62596AP/AF TD62597AP/AF/AFN TD62598AP/AF/AFN TD62601P/F TD62602P/F Common collector 8 bit darlington TB62705AF 16-Bit sipo Shift Register 8ch FET driver SOP18 TD62M8601 DIP18 darlington buffer array push-pull driver led constant current driver 500mA 8ch driver SOP18 PDF

    dip16

    Abstract: TD62382AP TD62003 TD62553 DIP-16 TD62382 DIP18 BF transistor series M 615 transistor td62503p
    Text: Transistor Array/Interface Driver Series Typ« No. Funcion m No. of Output Oufcut Voltag» Circuits Clamp V ceìsusKV DM* TD62001P/AP/F/AF Darlington driver emitter common) 7 TD62002P/AP/F/A F Darlington driver (emitter common) 7 TD62003P/PA/AP/APA/F/FB/AF


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    TD62001P/AP/F/AF TD62002P/AP/F/A TD62003P/PA/AP/APA/F/FB/AF TD62004P/PA/AP/APA/F/FB/AF TD62006P/F TD62007P/F TD62008AP/F/AF TD62064AP/APA/BP-1/F/AF/BF TD62074P/AP/F/AF TD62081AP/F/AF dip16 TD62382AP TD62003 TD62553 DIP-16 TD62382 DIP18 BF transistor series M 615 transistor td62503p PDF

    6DI15S-050

    Abstract: 6di15s 6DI20MS-050 1DI400MN-050 2di50z application 6DI15MS-050 6di20ms M117 M106 M115
    Text: 3 BIPOLAR TR ANSISTO R M O D ULES Ratings and Specifications tj H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.


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    125rC) 2DI50Z 2DI7RZ-140 2DI100Z 2DI1507 14odules 6DI10MS-050 6DI15S 6DI15MS-050 6DI20MS-050 6DI15S-050 1DI400MN-050 2di50z application 6di20ms M117 M106 M115 PDF

    6DI15S-050

    Abstract: M106 M115 M210 6DI20MS-050 1di200 1di400
    Text: BIPOLAR TRANSISTO R M O D U LES Ratings and Specifications 3 H igh-speed sw itch in g 1400 volts class p o w e r tran sisto r m odules • S uited fo r m o to r control ap p licatio n s w ith 5 7 5V A C input. • P o w er transistors and fre e w h e e ls are built into o ne package.


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    125rC) 2DI50Z 2DI7RZ-140 2DI100Z 2DI1507 1DI300Z 6DI10MS-050 6DI15S 6DI15MS-050 6DI20MS-050 6DI15S-050 M106 M115 M210 1di200 1di400 PDF

    BD618

    Abstract: BD 202 transistors
    Text: 5SC D • 623Sb QS Q 0Q 4 3 Ö 3 T H S I E 6 PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 7 04383 D BD612 BD 614 BD616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 620 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


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    623Sb BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 612/BD 614/BD BD618 BD 202 transistors PDF

    d947

    Abstract: d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951
    Text: 5SC D • 023SbOS 3004303 T MSIE<S PIMP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF 'T~ 3 04383 7 D BD 612 BD 614 BD 616 BD 618 BD 620 The transistors BD 612, BD 614, BD 616, BD 618, and BD 6 2 0 are PNP silicon epibase power transistors in a plastic package similar to TO 202. The collector is electrically


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    023SbOS BD612 BD616 Q62702-D947 Q62702-D949 Q62702-D951 Q62702-D953 Q62702-D955 fl23SbGS 000436b d947 d949 80614 B0620 BD PNP Q62702-D947 BD612 BD616 Q62702-D949 Q62702-D951 PDF

    equivalent transistor TT 3034

    Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718
    Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages


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    -335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 PDF

    transistor GR 345

    Abstract: TIC COL 02 25CC SD1495 SD1495-3 A 798 transistor
    Text: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1495-3 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY


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    SD1495 900-960MHZ 960MHz SD1495-3 SD1495-3 960MHz S88SDI4D5 transistor GR 345 TIC COL 02 25CC A 798 transistor PDF

    eltec

    Abstract: No abstract text available
    Text: ROHM Corporation representatives US and Canada Alabama (Missouri) Strategic Marketing, Huntsville, AL (205) 464-0490 Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Arizona (New Mexico, Nevada) Focus Sales, Inc., Taunton, MA (800) 933-2771


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    MJD44H11

    Abstract: No abstract text available
    Text: rZ Z SGS-THOMSON MJD44H11 M»ILi gT! ËOÛS MJD45H11 COMPLEMENTARY SILICON PNP TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW COLLECTOR-EMITTER SATURATION VOLTAGE . FAST SWITCHING SPEED APPLICATIONS • GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIER


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    MJD44H11 MJD45H11 MJD44H11 MJD45H11. SC36960 PDF

    eltec

    Abstract: No abstract text available
    Text: ROHM Corporation representatives US and Canada Massachusetts (Connecticut, Maine, New Hampshire, Rhode Island, Vermont) Focus Sales, Inc., Taunton, MA (800) 933-2771 Minnesota (Iowa, North & South Dakota) Hopewell Associates, Lakeville, MN (612) 469-3222


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    rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm rohm

    Abstract: No abstract text available
    Text: ROHM Group Rohm Co., Ltd. Rohm Korea Corp. 371-11, Kasan-Dong, Kum chon-ku, Seoul, Korea Tel: 2 8182-600 Fax: (2) 864-9343 Head office 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615, Japan Tel: (075) 311-2121 Fax: (075) 315-0712 Rohm-Wako (Malaysia) SDN. BHD.


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    TRANSISTOR JG 92

    Abstract: IFR 730
    Text: H * m iG TU&Q rni 1 40 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 S D 1 4 9 5 - 3 RF & MICROWAVE TRANSISTORS 9Ö0-960MHZ CLASS C, BASE STATIONS • ■ ■ ■ . . ■ CLASS C TRANSISTOR FREQUENCY VOLTAGE POWER OUT POWER GAIN EFFICIENCY


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    0-960MHZ 960MHz SD14S5-03 SD1495-3 900-960MH2 960MH* 33S/S TRANSISTOR JG 92 IFR 730 PDF

    Untitled

    Abstract: No abstract text available
    Text: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR • High Collector-Emitter Voltage: VCEo = - 400V • Low Collector-Emltter Saturation Voltage • Complement to MPSA44 ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Collector Emitter Voltage


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    KSP94 MPSA44 PDF

    400VF

    Abstract: npn 10a 800v 2SC3461
    Text: I Ordering num ber:EN 1596C _2SC3461 NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications Features . High breakdown voltage and high reliability. . Fast switching speed tf: 0.1ps typ. . Wide ASO. . Adoption of MBIT process.


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    1596C 2SC3461 00V/8A 300ps 7cH707Li DD5D114 400VF npn 10a 800v 2SC3461 PDF

    Siemens sfh615 optocoupler

    Abstract: No abstract text available
    Text: SIEMENS FEATURES SFH 610/611/615 5.3 kV TRIOS OPTOCOUPLER HIGH RELIABILITY Package Dimensions in Inches mm .307 (7 .8) _ .291 (7.4) * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 60% typical (>13) * Low CTR Degradation * Good CTR Linearity Depending on Forward


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    MG50M2CK2

    Abstract: No abstract text available
    Text: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)


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    MG50M2CK2 MG50M2CK2 PDF

    TO236

    Abstract: MMBTH30 to-236
    Text: NATL National æ m ISemiconductor Surface Mount Transistors SEMICOND RF Amplifiers and Oscillators— NPN Type No. Case Style v CEO V ebo V (V) Min Min CBO Vcb (" A ) Max ' ' 8 1^4 Vce f>FE Min Max (mA) (V) 12 2.5 20 15 25 MMBTH10 TO-236 (49) 30 25


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    O-236 MMBTH10 MMBTH30 MMBTH11 TO236 to-236 PDF