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    M/DIODE FAH 23 Search Results

    M/DIODE FAH 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    M/DIODE FAH 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Computer spike guard circuit diagram

    Abstract: 2N3904 2N3906 C100 EMCT03 fbh 41
    Text: EMCT03 Triple SMBus Temperature Monitor Datasheet GENERAL DESCRIPTION FEATURES The EMCT03 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones for a PC or embedded environment. The three temperature zones consist of two external and one internal


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    PDF EMCT03 EMCT03 Computer spike guard circuit diagram 2N3904 2N3906 C100 fbh 41

    silicon diode ideality factor

    Abstract: 9938 DN Computer spike guard circuit diagram EMC1023 EMC1023-1-ACZL-TR EMC1023-2-ACZL-TR EMC1023-3-ACZL-TR EMC1023-4-ACZL-TR XX10 pin configuration NPN transistor 2n3906
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 2200pF 11-bit silicon diode ideality factor 9938 DN Computer spike guard circuit diagram EMC1023-1-ACZL-TR EMC1023-2-ACZL-TR EMC1023-3-ACZL-TR EMC1023-4-ACZL-TR XX10 pin configuration NPN transistor 2n3906

    1001101B

    Abstract: EMC1023 EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR EMC1023-4-ACZL-TR
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 11-bit 1001101B EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR EMC1023-4-ACZL-TR

    silicon diode ideality factor

    Abstract: No abstract text available
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 11-bit EMC1023 silicon diode ideality factor

    Computer spike guard circuit diagram

    Abstract: silicon diode ideality factor DIODE FAH 45
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 11-bit EMC1023 Computer spike guard circuit diagram silicon diode ideality factor DIODE FAH 45

    Computer spike guard circuit diagram

    Abstract: silicon diode ideality factor EMC1023 EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR
    Text: EMC1023 1°C Triple Temperature Sensor with Resistance Error Correction Datasheet General Description Features The EMC1023 is a System Management Bus SMBus temperature sensor that is capable of monitoring three temperature zones. Four unique part numbers can be


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    PDF EMC1023 EMC1023 11-bit Computer spike guard circuit diagram silicon diode ideality factor EMC1023-1-ACZB-TR EMC1023-1-ACZL-TR EMC1023-2-ACZB-TR EMC1023-2-ACZL-TR EMC1023-3-ACZB-TR EMC1023-3-ACZL-TR EMC1023-4-ACZB-TR

    4312 Fan

    Abstract: pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102 EMC2102-DZK transistor 8331 FAN23
    Text: EMC2102 RPM-Based Fan Controller with HW Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2102 is an SMBus, closed-loop, RPM-based fan controller/driver with hardware HW thermal shutdown and reset controller. The EMC2102 is


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    PDF EMC2102 EMC2102 28pin 4312 Fan pin diagram of 7447 22342 capacitor amd 2587 2N3904 EMC2102-DZK transistor 8331 FAN23

    FAH diode

    Abstract: K375 DIODE FAH 45
    Text: OM6OL6OPB OM50F60PB Prelim inary Data Sheet OM45L120PB OM35F120PB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES H ig h C u r r e n t . Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 75 A m p Dual I G B T s W it h F R E D D i o d e s FEATURES • Includes Internal FRED Diode


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    PDF OM50F60PB OM45L120PB OM35F120PB MIL-S-19500, 35F120HB FAH diode K375 DIODE FAH 45

    transistor 9014

    Abstract: TRW POWER 0PI3150 transistor 9014 C npn MW131 0PI3250 OPI3150 OPI315Q QPI3250 9014 npn
    Text: OPTEK TECHNOLOGY INC DbE D | hT^âSÛO 0000a4t. 1 | Optoelectronics Division TRW Electronic Components Group 1987 Cost Saver Product! C a | , TRW f jr mofe information! Product Bulletin 5221 January 1 9 8 5 # - MX.WW ^ y Optically Coupled Isolators Types QPI3150, OPI325Q


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    PDF 000Da4ti OPI315Q, 0PI325Q 0PI315 transistor 9014 TRW POWER 0PI3150 transistor 9014 C npn MW131 0PI3250 OPI3150 OPI315Q QPI3250 9014 npn

    FAH diode

    Abstract: D617 M/diode fah 23
    Text: Bulletin 12063/A bitemational I»i]Rectifier SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features • High pow er FAST recovery diode series ■ 1.0 to 1.5 ps recovery tim e ■ High voltage ratings up to 1600V ■ High current capability ■ O ptim ized turn on and turn o ff ch a ra cte ristics


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    PDF 12063/A SD153N/R SD153N/R. D-616 D-617 FAH diode D617 M/diode fah 23

    FAH diode

    Abstract: nec re M/diode fah 42
    Text: N E C ELECTRONICS INC bZE D • b 42? 5 S5 D 0 3 B Q 35 SÛT H N E C E DATA SHEET N E C L A S E R D I O D E NDL5800D ELECTRON DEVICE 1 3 1 0 n m OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .5 Gb/s DESCRIPTION NDL5800D is 1310 nm DFB Distributed Feed-back laser diode chip on carrier w ith ribbon lead. This device is designed


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    PDF NDL5800D NDL5800D b427S2S FAH diode nec re M/diode fah 42

    OP265W

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin OP265W Ju ne 1996 GaAIAs Plastic Infrared Emitting Diode Type OP265W .125 3.18 i .115 (2.92) •165 (4.19) .M 5 (3.68) io n NOM .125 (2.92) z r ■025 (0.64) .015 (0.38) .030 (0.76)NOM — .500 (12.70) — MIN FOR IDENTIFICATION PURPOSES, ANODE LEAD IS


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    PDF OP265W OP265W

    transistor IR 840

    Abstract: OZ930
    Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4BC20UD T0220AB transistor IR 840 OZ930

    660B

    Abstract: IRFV460
    Text: Data Sheet No. PD-9.660B INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ; IRFV460 N-CHANNEL 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.


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    PDF IRFV460 IRFV460D IRFV460U O-258 MIL-S-19S00 I-470 660B IRFV460

    NDL5003D

    Abstract: NDL5003D1 NDL5100 Nitrogen
    Text: 3GE D • b.42?52S QDETSEb 4 ■ N E c'elECTRONICS INC T-H -07 LASER DIODE _J N D L5003D 1 1 300 nm O PTICAL FIB ER COM M UNICATIONS InGaAsP DC-PBH LA SER DIODE DESCRIPTIO N NDL5003D1 is a 1300 nm laser diode especially designed for long distance high capacity transmission systems. H ie DC-PBH


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    PDF NDL5003D1 NDL8003D1 NDL5003D1, NDL5003D. NDL5003D NDL5003D1 NDL5100 Nitrogen

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OM6OL6OHB OM45L120HB OM50F60HB OM35F12QHB HALF-BRIDGE IGBTS IN HERMETIC ISOLATED POWER BLO CK PACKAGES High Current, High Voltage 600V And 1200V. Up To 75 A m p IGBTs With FRED Diodes. Half-Bridge C onfiguration FEATURES • • •


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    PDF OM45L120HB OM50F60HB OM35F12QHB MIL-S-19500, 03oJL

    DT1X

    Abstract: No abstract text available
    Text: OMS410 OMS410A 0MS51Q 3 PHASE, LOW VOLTAGE, LOW RDS on , MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE T h r e e P ha s e . 100 Volt, 15 To 45 A m p B r i d g e With C u rre n t A n d T e m p e ra tu re S ensin g In A L o w P r o f i l e P a c k a g e FEATURES


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    PDF OMS410 OMS410A 0MS51Q DT1X

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.889 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM915Q P-CHANNEL RAD HARD Product Summary -100 Volt, 0.12012, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and


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    PDF IRHM915Q 1x105 1x105 1x1012 MIL-STD-750,

    Untitled

    Abstract: No abstract text available
    Text: FU JIT SU PROGRAMMABLE SCHOTTKY 32768-B IT READ ONLY MEMORY SCHOTTKY 32768-BIT DEAP PROM 4096 WORDS x 8 BITS M B7142E/H N ovem ber 1988 Edition 4 .0 The Fujitsu MB7142 Is high spee d s c h o ttk y T T L e lectrica lly field p rogram m ab le read only m e m o ry organized as 4096 w o rds by 8 bits. W ith th re e s ta te o u tp u ts , m em o ry


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    PDF 32768-B 32768-BIT B7142E/H MB7142 MB7142E/H 24-pin 24-LEAD FPT-24C-A01) 28-pad

    78A093A

    Abstract: MT88
    Text: H A R R CD22M3493 IS S E M I C O N D U C T O R 1 2 x 8 x 1 BiMOS-E Crosspoint Switch January 1997 Description Features 96 Analog Switches Low Ron Guaranteed Rqn Matching Analog Signal Input Voltage Equal to the Supply Voltage Wide Operating Voltage. 4V to 16V


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    PDF CD22M3493 CD22M3493 CD22M 78A093A MT88

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127107 rev. A 09/97 International Iö R Rectifier T.HFL SERIES T-Modules FAST RECOVERY DIODES Features • 40 A 70 A 85 A Fast recovery tim e characteristics ■ Electrically isolated base plate ■ 3 5 0 0 VRMS isolating voltage ■ Standard J E D E C package


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    PDF 003G030

    l3t1

    Abstract: D647 D652 1e4d D646
    Text: Bulletin 12076/A bitemational HRectifier SD453N/R SERIES Stud Version FAST RECOVERY DIODES Features • High power FA S T recovery diode series ■ 2 .0 to 3 .0 is recovery tim e ■ High voltage ratings up to 2 5 0 0 V ■ High current capability ■ O ptim ized turn on and turn off characteristics


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    PDF 12076/A SD453N/R D-653 D-654 l3t1 D647 D652 1e4d D646

    01d100

    Abstract: D626 D627 4-16UNF rs2020
    Text: Bulletin 12064/A International li»!]Rectifier SD203N/R SERIES Stud Version FAST RECOVERY DIODES Features • H ig h p o w e r F A S T re c o v e ry d io d e s e r ie s ■ 1 .0 to 2 .0 ■ H ig h v o lta g e ra tin g s up to 2 5 0 0 V ijs re c o v e ry tim e


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    PDF 12064/A SD203N/R D-626 D-627 01d100 D626 D627 4-16UNF rs2020

    27C011

    Abstract: 27C128 INTEL 27C010 27C128 27C210 27C513 27C64 27128B 7258 "drop-in replacement"
    Text: 27C011 PAGE-ADDRESSED1M 8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs -Single-Trace Modification for Retrofitting 27128-Based Designs ■ No-Hardware-Change Upgrades — Drop-In 27513 Replacement


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    PDF 27C011 28-Pin 27128-Based 27C011 27C128 INTEL 27C010 27C128 27C210 27C513 27C64 27128B 7258 "drop-in replacement"