LZP65n06
Abstract: "Power MOSFET" LZP65N06P
Text: LZP65N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application BVDSS=60V , • DC-DC Converters RDS ON =0.016Ω,
|
Original
|
LZP65N06P
above25
LZP65n06
"Power MOSFET"
LZP65N06P
|
PDF
|
LZP65n06
Abstract: No abstract text available
Text: LZP65N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area Application BVDSS=60V , • DC-DC Converters RDS ON =0.016Ω,
|
Original
|
LZP65N06P
above25â
LZP65n06
|
PDF
|