LZ95300
Abstract: NT315 LZ96650 LZ9G5100
Text: GATE ARRAY GATE ARRAYS ★ Under development SFASIC ♦ Features • A variety of feature-intensive devices are available, including the “sea of gate” gate arrays featuring a wide range of functional blocks and high speeds, and CMOS gate arrays with low operating voltage.
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LZ9J10000
LZ9J12500
LZ9J15000
LZ9J20000
LZ9J25000
LZ9J30000
J38000
LZ9J50000
LZ9J60000
LZ9J67000
LZ95300
NT315
LZ96650
LZ9G5100
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LZ9G5100
Abstract: No abstract text available
Text: GATE ARRAYS AND CELL-BASED ICs High-Density Sea-of-Gate type Gate c o u n t i LZ9G series Internal gate 0.9 ns/gate Vcc = 5 V, F.O. = 2, l = 2 mm Input buffer 2.7 ns (Vcc = 5 V, F.O. =2, I = 2 mm) Output buffer j 5.0 ns (Vcc = 5 V, C l 750 gates 2.0 to 5.5 V
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LZ9G750
LZ9G1900
LZ9G3400
LZ9G5100
LZ9G7000
LZ9G9800
LZ9G11000
LZ9000
LZ9F87000
LZ9F106000
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IR3Y29B
Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX
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ARM710
ARM810
IR3T24
IR3T24N
IR3Y05Y
IR3Y08
IR3Y12B
IR3Y18A
IR3Y21
IR3Y26A
IR3Y29B
ir3y26a1
IR4N
IR3T24N
IR3C08N
ir2c53
ir2c05
li3301
IR2E02
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LZ98B000
Abstract: 000GATES
Text: CELL-BASED ICs Gate Arrays I •M Lineup of Gate A rrays ns I ( 0.4 ( 0.5 ★ L Z 9 F series 0.6 ( Ï« 09 ( I I I LZ9A series ) ] LZ98 series LZ9G series ) ) Q 1.2 ( 1.7 ^ 9.5 ( LZ95 series LZ93 series 300 ) ) I l I I LZ96 series (low-voltage operation)
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LZ931000
LZ93600
LZ9F3000
LZ9F5000
LZ9F7000
LZ9F10000
LZ9F12000
LZ9F19000
LZ9F27000
LZ9F36000
LZ98B000
000GATES
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LZ9G5100
Abstract: No abstract text available
Text: GATEARRAYS AND CELL-BASED ICs Si^* '-MSI Cl Gate Arrays Lineup of Gate Arrays ns 0.10 I I C 0.15 LZ9K ( LZ9J series ( LZ9B series I series I j y <D ¡1 0.4 >< a a) Q 0.5 0.9 ( LZ9F ( LZ9G J series ) series I I * I 300 500 1k 3k I I 5k 10k 30k 50k 100k 200k
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