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    LVJ TAIWAN SEMICONDUCTOR Search Results

    LVJ TAIWAN SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    LVJ TAIWAN SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: P6SMB SERIES Taiwan Semiconductor CREAT BY ART Suface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than


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    J-STD-020 2011/65/EU 2002/96/EC DO-214AA D1405062 PDF

    Untitled

    Abstract: No abstract text available
    Text: P6SMB SERIES Taiwan Semiconductor CREAT BY ART Suface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than


    Original
    J-STD-020 2011/65/EU 2002/96/EC DO-214AA D1405062 PDF

    mbrf 10200

    Abstract: MBRF10200 Schottky B 1045 1035 op amp MBRF1035 S127 IT0-22
    Text: SEMICONDUCTOR |5 TAIWAN RoHS MBRF1035 - MBRF10200 Isolated 10.0 AMPS. Schottkv tky Ba Barrier Rectifiers rm ^aüAC. m ni COMPLIANCE — Z ttT K T - .I71 ; 1“ I .nnii.in; - .1i C jA jZ a Fea tu re s ❖ ❖ • fy ❖ ■ fy ❖ -v■ fy Pla slfc m ateria I u sed ca rrle s U ndarw rlte rs


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    MBRF1035 MBRF10200 MEBF10CP mbrf 10200 MBRF10200 Schottky B 1045 1035 op amp S127 IT0-22 PDF

    Untitled

    Abstract: No abstract text available
    Text: E TAIWAN SEMICONDUCTOR MBRF1035 - MBRF10200 Isolated 10.0 AM PS. Schottky Barrier Rectifiers RoHS ITO-220AC COMPLIANCE 11; í 1" I 2ÍB.ÍW >v.s i : Features ❖ Pla site materia I u sed carr le s U nderwrlte rs ❖ Metal silicon Junción, majority carrier conduction


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    MBRF1035 MBRF10200 ITO-220AC PDF

    P6SMB33A ltj

    Abstract: KZJ Series E326243 P6SMB10 P6SMB100 P6SMB10A P6SMB220 P6SMB220A P6SMB91 TAIWAN P6SMB36
    Text: is P6SMB SERIES TAIWAN SEMICONDUCTOR Pb 600 Watts Surface Mount Transient Voltage Suppressor SMB/DO-214AA RoHS COMPLIANCE * .077 1.95 Features <• -v- .147(3.73) .137(3.48) n * UL Recognized File # E-326243 For surface mounted application in order to optimize board space


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    SMB/DO-214AA E-326243 P6SMB170 P6SMB170A P6SMB180 P6SMB180A P6SMB200 P6SMB200A P6SMB220 P6SMB220A P6SMB33A ltj KZJ Series E326243 P6SMB10 P6SMB100 P6SMB10A P6SMB91 TAIWAN P6SMB36 PDF