Untitled
Abstract: No abstract text available
Text: LED DISPLAY LTS-10804KF LED DISPLAY LTS-10804KF Rev Description By Date 01 Preliminary SPEC MINALIN 09-Sep-2009 Above data for PD and Customer tracking only - NPPR Received and Upload on system MINALIN 09-Sep-2009 ANON/ James 26-Feb-2014 Add cosmetics spec as note on page 3 of 6
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LTS-10804KF
09-Sep-2009
26-Feb-2014
BNS-OD-FC002/A4
LTS-10804KF
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LTS 6-NP
Abstract: hall current transducer lts 6-np lem lts lts 6 np mini servo motor
Text: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16065 Electrical data IPN IPM ÎPDC
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100915
Abstract: LTS 6-NP
Text: Current Transducer LTS 6-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 6 At 16065 Electrical data IPN IPM ÎP VOUT
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hall current transducer lts 6-np
Abstract: LTS 6-NP operation principle of lts 6-NP lem lts lts 6 np LEM Components
Text: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). 16065 Electrical data IPN IPM ÎP
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Untitled
Abstract: No abstract text available
Text: Current Transducer LTS 6-NP For the electronic measurement of currents: DC, AC, pulsed, mixed with galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). IPN = 6 At 16065 Electrical data IPN IPM ÎP VOUT
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hall current transducer lts 6-np
Abstract: LTS 6-NP
Text: Current Transducer LTS 6-NP IPN For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). = 2-3-6 A Electrical data IPN IP VOUT NS
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operation principle of lts 6-NP
Abstract: LTS 6-NP
Text: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT NS
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LTS 6-NP
Abstract: lem lts operation principle of lts 6-NP lts 6 np hall current transducer lts 6-np lem 703 lts 25 np
Text: Current Transducer LTS 6-NP IPN = 6 At For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data I PN IP Î PDC VOUT
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operation principle of lts 6-NP
Abstract: hall current transducer lts 6-np LTS 6-NP LEM Components
Text: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP VOUT NS
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lem lts
Abstract: operation principle of lts 6-NP LTS 6-NP
Text: Current Transducer LTS 6-NP IPN = 2-3-6 A For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP Primary nominal r.m.s. current
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2n3716
Abstract: No abstract text available
Text: 2N3716 10 AMPERE POWER TRANSISTORS SILICON NPN 60.80 V. 1 of 1 Home Part Number: 2N3716 Online Store 2N3716 Diodes 1 0 AM PERE PO WER TRANSISTO RS SILIC O N NPN 6 0 .8 0 VO LTS Transistors 1 5 0 WATTS
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2N3716
com/2n3716
2N3716
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LTS6-NP
Abstract: hall current transducer lts 6-np lts 6 np
Text: 2002-06-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 76-963-05 Strömsensor LTS6-NP Current Transducer LTS 6-NP IPN For the electronic measurement of currents : DC, AC, pulsed, mixed,
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BC238B npn
Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
Text: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN
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BC182A
BC182B
BC212A
EC212B
BC237A
BC237B
BC238A
BC168A
BC168B
BC168C
BC238B npn
BC337-25
BC415A CBE
BC238B
Bc238B, NPN
BC337 CBE
BC307A
BC414B
BC337-25 CBE
BC238C
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Untitled
Abstract: No abstract text available
Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024
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2N6058
2N6059
2N6350
2N6351
14-PtN
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BUY69
Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026
Text: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100
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0-400I
BD253
BD253A
BD253B
BFX84
BFX85
BFX86
BCY78
BCY79
BCY58
BUY69
bu137
transistor t03
BU108
BC326
BU500
bu137a
F011 transistor
bcy79 equivalent
2s026
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6LJ6
Abstract: VICTOREEN hv resistor VICTOREEN hr flyback tv transformer 6lj6a general electric
Text: — PRODUCT INFORMATION — Page 1 t.U'X 7 « O ViC I 6LJ6-A Beam Triode IS .V'HO\- TUBES FOR HV SHUNT REGULATOR APPLICATIONS • CO LO R TV TYPE ■ 27000 VO LTS D C T h e 6 L J 6 - A is a low-current, ■ 40 WATTS PLATE DISSIPATION high-voltage, b e a m t riode
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-TD187-1
6LJ6
VICTOREEN hv resistor
VICTOREEN
hr flyback tv transformer
6lj6a
general electric
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SFD5390
Abstract: No abstract text available
Text: SFD5390 5 AMP NPN D A R L I N G T O N T R A N S I S T O R 1 2 0 VO LTS CASE STYLE 14830 V alley View Avenue La Mirada. California 9 0 6 3 8 213 9 2 1 -9 6 6 0 T W X 9 1 0 -5 8 3 -4 8 0 7 FAX 2 1 3 -9 2 1 -2 3 9 6 FEATURES t •*« i * U JtM C TOO IftU KKttON S
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SFD5390
300ns
20MHz
10Vdc'
300us,
10BK-
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MJ3026
Abstract: TIC 136 Transistor MJ3027
Text: M J 3 0 2 6 s ilic o n M J302 7 2 AMPERES POWER TRANSISTORS NPN SILICON VERTICAL OUTPUT HIGH-VOLTAGE NPN SILICON TRANSISTORS 500, 700 V O LTS . . . designed for use in class A vertical deflection in television receivers, where linear h p g is desired to 2 5 0 m A . Intended fo r use w ith high
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MJ3026
MJ3027
MJ3026
MJ3027
SeeAN-415)
TIC 136 Transistor
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BU157
Abstract: CV7334 s3 npn 2S721 BU500 2S025 2S723 2S026 CV7333 BD253
Text: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 -2 3 - “ 6-6-4- — 38 05 min - Dimensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A VC EX VCER VCEO V V V IC d.c. A PTO T 300 350 400 500 500 400 250
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0-400I
BD253
BD253A
BD253B
3002S723
2S724
CV7333
2S025
CV7334
2S026
BU157
s3 npn
2S721
BU500
2S723
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BU222
Abstract: MJ425 2N3738 BU208 BU222A MJ3029 2N3583 2N3584 2N3739 2N6211
Text: Silicon Power-Metal-Can NPN l C = 1.0 A. 2N 3583 2N 3738 2N 3739 l e = 2.0 A. 2N 3584 M J3026 MJ3027 2N 3585 2N 4240 v CEO V olts hp£ @ M in./M ax. •c Am p. v CE sat @ 'C V o lts Max. Am p. fT M Hz PD Watts Case PNP 2N 6420 2N 6 4 2 4 2N 6425 175 225 300
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2N3583
2N6420
2N3738
2N6424
2N3739
2N6425
2N3584
2N6421
2N6211
MJ3026
BU222
MJ425
BU208
BU222A
MJ3029
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6by5G
Abstract: 6by5 FULL WAVE RECTIFIER CIRCUITS
Text: TENTATIVE 6BY5G DATA TUNG-SOL DOUBLE DIODE COATED UN I P O TEN TIA L CATHODE HEATER 6 . 3 VO LTS 1 .6 AMP. AC OR DC ANY MOUNTING P O S IT IO N BOTTOM VIEW MED IUM S H E L L 7 P I N OCTAL 6CN THE 6BY5G I S A FULL-W AVE HIGH-VACUUM R E C T IF IE R D ESIG N ED FOR DAMPER S ER
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M8-210
6by5G
6by5
FULL WAVE RECTIFIER CIRCUITS
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b0239c
Abstract: 7 amps pnp transistor TRANSISTOR T0220 PNP POWER TRANSISTOR TO220 B0243C BD243 B0243 b0244c npn transistor bd243c Transistor 2n6099
Text: PLASTIC POWER P L A S T IC P O W E R T R A N S IS T O R S E L E C T O R C H A R T lc 4 Am ps VCE° V o lts NPN PNP 5 Am ps NPN 7 Am ps PNP NPN PNP 7 Am ps NPN PNP > 10 A m ps NPN 2 N 6 2 8 8 2N 6 1 1 1 30 2N6103 40 BD239 BD240 B D 2 41 BD242 BD243 BD244 BD243A
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2N6288
2N6111
2N6103
BD239
BD241
BD243
2N6290
2N6109
BD239A
BD240A
b0239c
7 amps pnp transistor
TRANSISTOR T0220
PNP POWER TRANSISTOR TO220
B0243C
B0243
b0244c
npn transistor bd243c
Transistor 2n6099
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a331j
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor T h e M R F 6 4 0 4 is d e s ig n e d fo r 2 6 v o lts m ic ro w a v e larg e sig n a l, c o m m o n em itte r, cla ss A B lin e a r a m p lifie r a p p lic a tio n s o p e ra tin g in th e ra ng e 1.8 to
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MRF6404
a331j
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8U806
Abstract: 1 L 0380 R 14J7 2j0115
Text: MOTO RO LA SC XSTRS/R 12 E D I b3b?asM GoaMaas a | T-zyi* F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 .0 AM PERE DARLINGTON NPN POWER TRANSISTORS N PN D A R L IN G T O N P O W E R T R A N S IS T O R S 6 0 W ATTS 160 and 2 00 V O LTS These Darlington transistors are high voltage, high speed devices
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T0-220AB
8U806
BU807
1 L 0380 R
14J7
2j0115
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