2N6794
Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds
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2N6794
2N6794
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6794 JANTX
fllnm 80
3v 4 channal relay
fllnm
qpl-19500
LH0063
TRANSISTOR C 557 B
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6796 IR
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RF540
Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Text: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q
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540/FI-541/FI
542/FI-543/FI
IRF540
IRF540FI
IRF541
IRF541FI
IRF542
IRF542FI
IRF543
IRF543FI
RF540
b17a
q02c
IRF540 application
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lts 542
Abstract: UFN540 FN640
Text: POWER MOSFET TRANSISTORS U F N 5 4 0 U F N 5 4 1 100 Volt, 0.0 85 Ohm N-Channel U F N 5 4 2 U F N 5 4 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roaom and a high transconductance.
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OCR Scan
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UFN540
UFN541
UFN542
UFN543
lts 542
UFN540
FN640
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2N6831
Abstract: Silicon Controlled Rectifiers Brown Boveri 16C40B 2n6871 16C20B 16C60B 2N685 2N688 2N690
Text: BBC HFMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEI M Silicon Controlled Rectifiers B R O W N BO V E R I Geschäftsbereich Halbleiter und Stromrichter Tel. 0 6 2 0 6 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 16C 25 Amperes RSM
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OCR Scan
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D-6840
2N68316C10B
2N685
16C20B
2N68716C30B
2N688
16C40B
2N690
16C60B
2N69216C80B
2N6831
Silicon Controlled Rectifiers
Brown Boveri
2n6871
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mosfet 2n6788
Abstract: 2n6800 2N6788 LH0063 QPL-19500 2N6792 JANTXV 2N6788 JANTXV
Text: Standard Power MOSFETs 2N6788 File Number 1593 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE o 6.0A, 100V rDs on = 0.30 Ü Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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OCR Scan
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2N6788
2N6788
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
mosfet 2n6788
LH0063
QPL-19500
2N6792 JANTXV
2N6788 JANTXV
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lts 542 pin diagram
Abstract: pin diagram of LTS 542 lts 542 diagram LTS 542 INTERNAL DIAGRAM pin diagram of lts 543 lts 542
Text: Am2847•Am2896 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, TMS3120, TMS3409, MK1007, 3347 • Internal recirculates on each register • Single T T L compatible clock • Outputs sink tw o T TL loads
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Am2847·
Am2896
80-Bit
96-Bit
2532B,
TMS3120,
TMS3409,
MK1007,
80-and
Am2847
lts 542 pin diagram
pin diagram of LTS 542
lts 542 diagram
LTS 542 INTERNAL DIAGRAM
pin diagram of lts 543
lts 542
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S1B02
Abstract: lts 542 2N6761
Text: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542
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OCR Scan
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MflS5M52
MIL-S-19500/542
JANTXV2NB762
JAI\ITX2NB762
2N67G1
para-11
G-294
S1B02
lts 542
2N6761
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2N6851
Abstract: 2N6851 JANTX 2n6800
Text: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d
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OCR Scan
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2N6851
-200V
cs-43
2N6851
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6851 JANTX
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PDF
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2N6901
Abstract: mosfet 2n6788 2N6802 metal detector WITH IC 555 550D 2N6756 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6802 File Number 1905 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3.5A, 500V r D S o n —"1.50 N-CHANNEL ENHANCEMENT MODE o Features: • m ■ ■ ■ SOA is power-dissipation limited
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OCR Scan
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2N6802
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
MIL-S-19500/
2N6901
mosfet 2n6788
metal detector WITH IC 555
550D
2N6756
LH0063
QPL-19500
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PDF
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lf 3560
Abstract: LT 3780
Text: SCIENTIFIC/ MINI-CIRCUITS 41E J> f lo b f lf lll 0 0 0 1 4 3 ^ b 3 b plug-in, surface m ount S C C Frequency Mixers LEVEL 7 + 7dBm LO, upto + 1dBm C>l Models RF nic aaocm computer-automated performance data typical production unit / for data of other models consult factory
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OCR Scan
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841x567
SYM-B60
SYM-860
lf 3560
LT 3780
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PDF
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2N6784
Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds
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OCR Scan
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2N6784
2N6784
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
2sC 1906 transistor
2N6784 JANTX
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PDF
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lts 542
Abstract: LTS 543 2n6800 LTS 542 INTERNAL DIAGRAM 2N6756 2N6790 LH0063 QPL-19500 TRANSISTOR C 557 B
Text: Standard Power MOSFETs 2N6790 File N u m be r 1900 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 3.5 A, 200V N-CHANNEL ENHANCEMENT MODE TDSIonl = 0 . 8 0 Features: • a ■ ■ m SOA is power-dissipation limited Nanosecond switching speeds
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OCR Scan
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2N6790
92cs-3374i
2N6790
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
lts 542
LTS 543
LTS 542 INTERNAL DIAGRAM
2N6756
LH0063
QPL-19500
TRANSISTOR C 557 B
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CA2812
Abstract: No abstract text available
Text: MOTOROLA • S E M IC O N D U C T O R TECHNICAL DATA CA2812 CA2812H The RF Line W id e b a n d L in e a r A m p lif ie r s . . d e sign e d for am plifier ap p lications in 50 to 100 o h m sy st e m s requiring w ide bandw idth, lo w n oise and low distortion. T h is hybrid p ro vid es excellent gain stability
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OCR Scan
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CA2812
CA2812H
-32dB
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missile seeker
Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —
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OCR Scan
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MA45200
missile seeker
varactor diode for x band radar
radar detector leakage
police radar detector
Q4000
GaAs impatt diode W band
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2n6798 jantx
Abstract: 2N6798 IH0063 2N6756 QPL-19500
Text: Standard Power MOSFETs 2N6798 File Number 1903 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 5.5A, 200V TDSIonl = 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • m m ■ ■ SOA is power-dissipation limited
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OCR Scan
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2N6798
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2n6798 jantx
IH0063
2N6756
QPL-19500
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PDF
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N6228K
Abstract: No abstract text available
Text: y MN6227 MN6228 W ID EBAN D, S AM PLIN G 12-Bit A /D C O N VE R TE R S MICRO NETWORKS DESCRIPTION • 33kHz Sampling Rate With Internal T/H Amplifier • 16.5kHz Full-Power Input Bandwidth • 70dB Signal-to-Noise Ratio Over Full Bandwidth • -8 0 d B Harmonics Over
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OCR Scan
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MN6227
MN6228
12-Bit
33kHz
16-Bit
150nsec
MN574A
1100mW
MN6227
MN6228
N6228K
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PDF
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Gunn Diode
Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Text: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property
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ic HM 392 - 110
Abstract: vitrohm 412 101 R15 N 470 KP
Text: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182
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Untitled
Abstract: No abstract text available
Text: D S 1 *542 DALLAS s e m ic o n d u c to r DS1642 N onvolatile Tim ekeeping RAM F EA T U R ES PIN A S S IG N M E N T • Integrated NV SRAM, real time dock, crystal, power tail control circuit and lithium energy source • Standard JEDEC bytewide 2K x 8 static RAM pinout
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OCR Scan
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DS1642
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PDF
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Mitsubishi VFGL
Abstract: BN35 6H20 BN35-3H103 c2570 7a103 gr15 thermistor 6B103 3U104 bd 6h2
Text: i K i ï i ï - F t r - s a s s i u ON BOARD THERMISTOR SERIES - a [High precision leaded type] The high precision has very tight resistance and B value tolerances to allow very accurate temperature control or compensation. ¡ ü f t J î i ' U - X ' t t x l 'f ê J Î T 0 ! 8 © £ J Î S « â 9 £ l H i £ J î f f l S P x S J Î 1 I
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08sqSna-
Mitsubishi VFGL
BN35
6H20
BN35-3H103
c2570
7a103
gr15 thermistor
6B103
3U104
bd 6h2
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PDF
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9020JE
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES M onolithic 1 0 -B it/60 MSPS Converter TTL O utputs Bipolar ± 1 .7 5 V Analog Input 56 dB SNR @ 2 .3 M Hz Input Low (45 pF) Input Capacitance MIL-STD-883 Com pliant Versions Available 10-Btæivffs ADGbrMsrter Æ0O2O FUNCTIONAL BLOCK DIAGRAM
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OCR Scan
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it/60
MIL-STD-883
10-Bt
10-bit
AD9020
37-pin
AD9020/PCB
68-Leaded
68-Terminal
E-68A)
9020JE
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PDF
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General Semiconductor diode ed 7b
Abstract: 30f 124 equivalent diode F4 4e 3AB 973 734 2D 1002 diode 7A SF MC4006 BV 726 C 1 Converter 881 2ac cr 29c
Text: M O T O R O L A MCM6560 MCM6561 MCM6562 , MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N -C H A N N E L . LO W T H R E S H O L D T h e M C M 656Û is a mack p ro g ra m m a b le 8 1 9 2 -b it s ta tic Read O n ly M e m o ry fa b ric a te d w ith N-C hannel m e ta l gate te c h n o lo g y . A
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OCR Scan
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MCM6560
MCM6561
MCM6562
8192-BIT
MCM6562
MC7404
General Semiconductor diode ed 7b
30f 124 equivalent
diode F4 4e
3AB 973 734
2D 1002 diode
7A SF
MC4006
BV 726 C 1 Converter
881 2ac
cr 29c
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PDF
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4CX1500B
Abstract: Eimac 4CX1500B 4cx1500b j 4cx1500 Varian EIMAC Varian SK300 4940 AB Pioneer 400 watt amplifier
Text: 4CX1500B RADIAL BEAM POWER TETRODE TECHNICAL DATA JE D E C D E S IG N A T IO N 8660 The EIMAC 4CX1500B is a ce ra mi c and metal, forced air cooled, radial beam tetrode with a rated maximum plate di s si pa ti o n of 1500 Watts. It is a low voltage, high-current
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OCR Scan
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4CX1500B
4CX1500B
-------03A
Eimac 4CX1500B
4cx1500b j
4cx1500
Varian EIMAC
Varian
SK300
4940 AB
Pioneer 400 watt amplifier
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PDF
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diagram ic 12f 629
Abstract: 30f 124 equivalent diode F6 4d diode F4 4e diode F6 5b MC4006 603 31f ADB 646 MC7414 ic 324
Text: MCM6560 MCM6561 MCM6562 MOS 8192-BIT BINARY ADDRESSABLE READ ONLY MEMORIES N C H A N N E L , L O W T H R E S H O L D 8K BINARY ADDRESSABLE R EA D O N LY MEMORIES The M C M 6560 is a mask program m able 8 1 9 2 -b it static Read O n ly M em o ry fabricated w ith N-Channei metal gate technology. A
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MCM6560
MCM6561
MCM6562
8192-BIT
MCM6562
M6560,
diagram ic 12f 629
30f 124 equivalent
diode F6 4d
diode F4 4e
diode F6 5b
MC4006
603 31f
ADB 646
MC7414
ic 324
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