4233A
Abstract: 535x 184 324 DIODE 2N5383 2N3055C
Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8
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533XCD01
534XCD02
535XCQ01
2N1063
2N107Û
4233A
535x
184 324 DIODE
2N5383
2N3055C
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D29A5
Abstract: 2N5381 transistor 3405 npn 2N5383 D29A4 2N4425 2N2713 2N5380 2N5368 2N5371
Text: SPRAGUE Econoline P la stic -M o ld e d Silicon SEPT" Transistors Type No. P O L A R IT Y GENERAL-PURPOSE AMPLIFIERS/SWITCHES D -C C U R R E N T G A IN h FE PD Ta = 25 C (mW) V (BR) CBO V olts V (BR) CEO Vo lts V (BR) EBO Vo lts ICBO mA Cond tions Max. lc
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2N5368
2N5370
2N5371
2N5372
2N5373
2N4954
2N5418
2N5419
D29A4
D29A5
2N5381
transistor 3405 npn
2N5383
2N4425
2N2713
2N5380
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lts 542
Abstract: LTS 543 LTS 543 common cathode lts 542 pin diagram LT 543 common cathode pin diagram of LTS 542 lts 543 pin diagram lts 543 series pin diagram 7 segment display LTS 542 7 SEGMENT LT 543
Text: TAIWAN LITON ELECTRONIC S4E D ÔÛ35547 OODOblñ 1 "T~4/-33 LTS-360 SERIES 0.36" SINGLE DIGIT NUMERIC DISPLAYS SPECIALIST FEATURES • 0.36 INCH 9.20mm D IG IT HEIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF FIVE BRIGHT COLORS-RED/BRIGHT RED/GREEN/ORANGE/HIGH EFFICIENCY RED.
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LTS-360
lts 542
LTS 543
LTS 543 common cathode
lts 542 pin diagram
LT 543 common cathode
pin diagram of LTS 542
lts 543 pin diagram
lts 543 series pin diagram
7 segment display LTS 542
7 SEGMENT LT 543
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SE 214
Abstract: No abstract text available
Text: LED's INFRARED R everse O utput Type po w er at Po(m W ) m in . SE SE SE SE 1450-1* 1450-2* 1450-3* 1450-4* SE 2460-1 S E 2460-2 S E 2460-3 Beam Sp ecified fo rw ard current angle d ro p l F(m A) (¿(degrees) V F(vo lts) typ. 0.20 0.35 0.70 1.00 Forw ard
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LT 543 common cathode
Abstract: No abstract text available
Text: LTS-310A SERIES UTE»•jJ •■'TS-.!>3 0.3" S IN G L E D IG IT N U M E R IC D IS P L A Y S TAIWAN LITO N E L E C T R O N I C 4TE D B a a s te s seb b t l i t 0003752 FEATURES • 0.3 IN C H 7.62mm D IG IT H E IG H T . • C H O IC E O F S IX B R IG H T C O L O R S - R E D / B R IG H T
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LTS-310A
LT 543 common cathode
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CK542DX
Abstract: Scans-0017788 RAYTHEON ck526
Text: ï TûYT UtfW ntU N , TE CHNICAL IN FO R M A T IO N £An SUBMINIATURE PENTODE TYPE £J—aJL CK542DX The C K 542D X is a sub m iniatu re power a m p lifie r pentode designed fo r use in portable and w e a r a b le eq uipm e nt. The fle x ib le te rm in a l
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CK542DX
CK542DX
CK526AX.
Scans-0017788
RAYTHEON
ck526
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LTS-6X60
Abstract: 6X80 LTS-6X80 E780P
Text: LEDTRONICS B7E » T it f an 54237Q5 OQQQ34b •=} ■ " - p m „-^3, ■ 14.2B m m SINGLE DIG IT 0.56” NUMERIC DISPLAYS LEDTRONICS,Inc STD RED, HI-RED, HI-EFF RED/YELLOW/GREEN LEOTEOMICS PRET HD. LTSCOM. RHODE 5EC0MD SOURCES SECOND can. CRTHDDE SOURCES
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54237Q5
OQQQ34b
MHNB860
B780R
E780P
BR80HR
E480G
MRHGG80
MRNB780
-25tO
LTS-6X60
6X80
LTS-6X80
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12T515U
Abstract: 12T5.15UW Calex
Text: CALEX MANUFACTURING CO SEE D • 1611550 CI00114b BOB * C E X 8.5 Watt Triple Output DC/DC Converters 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES " 'p S 'M l • W ide 4:1 Input Voltage Range (9-36 or 18-72VDC)
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18-72VDC)
T-57-11
15VDC.
12T515U
12T5.15UW
Calex
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S1B02
Abstract: lts 542 2N6761
Text: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542
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MflS5M52
MIL-S-19500/542
JANTXV2NB762
JAI\ITX2NB762
2N67G1
para-11
G-294
S1B02
lts 542
2N6761
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5S12.450
Abstract: MS15 Calex 5S5.100
Text: CALEX MANUFACTURING CO 52E D • 1611250 Q0Q113D T40 B K E X 5 Watt Single Output, 5 Volt Input DC/DC Converters 3355 Vincent Road, Pleasant Hill, CA 94523-4389 800-542-3355 Telephone 415 932-3911 FAX: (415)932-6017 FEATURES ■ '- 37 - • Low P rofile Copper Case (0.375" High)
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GGD113Q
75VDC_
25VDC
75VOC
5S12.450
MS15
Calex
5S5.100
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LTS23305
Abstract: HP 5082-7653 LTD-585G CSS-517Y LTD482RC CSM-57442E HDSP-3403 MAN3920A LTS-4540-AG tdso 5160 k
Text: Cross Reference For detailed comparison, please always refer to m anufacture r's specs Manufacturer Part Number CSC P/N A B C HP 50 82 -761 0 CSS-3126-11 X X X HP 5 0 8 2-7 6 1 1 CSS-31 2E 1 1 X X X D j 0.30 F" C f ’t ‘ G " C p N •- 0 .3 0 r~ 'i j N
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CSS-3126-11
CSS-31
CSS-313E-11
CSS-312Y-11
CSS-310Y-11
CSS-416E-11
CSS-561
CSS-5614D
TLUR355S
LTS23305
HP 5082-7653
LTD-585G
CSS-517Y
LTD482RC
CSM-57442E
HDSP-3403
MAN3920A
LTS-4540-AG
tdso 5160 k
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IR 10D 6g
Abstract: 6H60 FND 570
Text: evE R L IG H T 0 . 5 6 In c h 1 4 . 2 m m 1 D ig it H Y B R ID A IR -G A P S M D D IS P L A Y A lln G a P R ed (6 3 0 n m ) F N D 6 H 6 0 .S M D , A lln G a P R ed (6 4 2 n m ) F N D 6 R 6 0 .S M D , P R E L IM IN A R Y A lln G a P Y e llo w F N D 6 Y 6 0 .S M D ,
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dy 255
Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555
Text: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the
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Untitled
Abstract: No abstract text available
Text: RECTIFIER DIODES, Fast Recovery, Glass Passivated, Plastic Package P a a k M a x im u m A v e ra g e t s t . C u rre n t 6 In v a rs e R e c tifie d P a r t a t T V o lta g e , F o rw a rd S u rg e P e a k C u rre n t 8 . 3m s S u p e r im p o s e d M a x im u m
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D0-204AP
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25k80
Abstract: No abstract text available
Text: HARRIS h a -5 1 5 1 / 5 2 /5 4 m X CM Single/Dual/Quad Low Power Operational Amplifiers i- in in y— i Applications Features in \ < • Low Supply C urrent. < 200/jA /A m plilier • Portable Instruments • Dual Supply Voltage R an g e. ±1 .5V to ±1 5 V
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200/jA
25k80
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2N6831
Abstract: Silicon Controlled Rectifiers Brown Boveri 16C40B 2n6871 16C20B 16C60B 2N685 2N688 2N690
Text: BBC HFMC B R O W N , B O V E R I & CI E AKTIENGESELLSCHAFT MANNHEI M Silicon Controlled Rectifiers B R O W N BO V E R I Geschäftsbereich Halbleiter und Stromrichter Tel. 0 6 2 0 6 503-1, Telex 04-65 727 Postfach 200, D-6840 Lampertheim Series 16C 25 Amperes RSM
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D-6840
2N68316C10B
2N685
16C20B
2N68716C30B
2N688
16C40B
2N690
16C60B
2N69216C80B
2N6831
Silicon Controlled Rectifiers
Brown Boveri
2n6871
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1N5421
Abstract: 1N5425 1N5716 1N5718 1N5717
Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 1N5714 1N5715 1N5716 1N5717 1N5718 HIGH-Q-HIGH VOLTAGE-HIGH CAFACITANCE . SILICON EPITAXIAL VARACTRON VOLTAGE-VARIABLE CAPACITANCE DIODES Electrically Equivalent to 1N5421 -1N5425 « a S T Æ » 419-QEOMETRY419 or 423, GEOMETRY 423 or 418
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1N5421
-1N5425
419-QEOMETRY419
1N5714
1N5715
1N5716
1N5717
1N5718
1N5425
1N5718
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precision absolute value
Abstract: OP497BRC/883 OP497
Text: ANALO G ► DEVICES Precision Picoampere Input Current Quad Operational Amplifier OP-497 FEATURES Low Offset Voltage: 50 |iV max Low Offset Voltage Drift: 0.5 fx V /X max Very Low Bias Current +25°C: 100 pA max —55°C to +125°C: 450 pA max Very High Open-Loop Gain: 2000 V /m V min
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OP-497
16-Lead
20-Position
precision absolute value
OP497BRC/883
OP497
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missile seeker
Abstract: varactor diode for x band radar radar detector leakage police radar detector Q4000 GaAs impatt diode W band
Text: MA45200 Series Silicon Abrupt Junction Tuning Varactors Features • HIGH Q ■ LOW LEAKAGE ■ AVAILABLE IN CHIP FORM 30 J — 'V 3 El ~ r ■ ■ ■ ■ AVAILABLE IN CERAMIC PACKAGES CUSTOM DESIGNS AVAILABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF —
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MA45200
missile seeker
varactor diode for x band radar
radar detector leakage
police radar detector
Q4000
GaAs impatt diode W band
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TMS3409
Abstract: 2532B AM2847DC AM2847DM AM2847PC AM2896DC AM2896DM AM2896PC MK1007 TMS3120
Text: A m 2 8 4 7 • A m 2 8 9 6 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, T M S 3 120, T M S 340 9, M K 1007, 3347 • Internal recirculates on each register • Single T T L com patible clock
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Am2847â
Am2896
80-Bit
96-Bit
2532B,
TMS3120,
TMS3409,
MK1007,
L-STD-883
Am2847
TMS3409
2532B
AM2847DC
AM2847DM
AM2847PC
AM2896DC
AM2896DM
AM2896PC
MK1007
TMS3120
|
MK1007
Abstract: TMS3409 AM2847PC 2532B AM2847DC AM2847DM AM2896DC AM2896DM AM2896PC TMS3120
Text: A m 2 8 4 7 • A m 2 8 9 6 Quad 80-Bit and Quad 96-Bit Static Shift Registers Distinctive Characteristics • Plug-in replacement fo r 2532B, T M S 3 120, T M S 340 9, M K 1007, 3347 • Internal recirculates on each register • Single T T L com patible clock
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Am2847â
Am2896
80-Bit
96-Bit
2532B,
TMS3120,
TMS3409,
MK1007,
L-STD-883
Am2847
MK1007
TMS3409
AM2847PC
2532B
AM2847DC
AM2847DM
AM2896DC
AM2896DM
AM2896PC
TMS3120
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N6228K
Abstract: No abstract text available
Text: y MN6227 MN6228 W ID EBAN D, S AM PLIN G 12-Bit A /D C O N VE R TE R S MICRO NETWORKS DESCRIPTION • 33kHz Sampling Rate With Internal T/H Amplifier • 16.5kHz Full-Power Input Bandwidth • 70dB Signal-to-Noise Ratio Over Full Bandwidth • -8 0 d B Harmonics Over
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MN6227
MN6228
12-Bit
33kHz
16-Bit
150nsec
MN574A
1100mW
MN6227
MN6228
N6228K
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2N6794
Abstract: 2N6794 JANTX fllnm 80 3v 4 channal relay fllnm qpl-19500 LH0063 TRANSISTOR C 557 B 600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6796 IR
Text: Standard Power MOSFETs 2N6794 File Number 1902 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 1.5A, 500V rD S on = 3 0 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation lim ited m Nanosecond switching speeds
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2N6794
2N6794
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6794 JANTX
fllnm 80
3v 4 channal relay
fllnm
qpl-19500
LH0063
TRANSISTOR C 557 B
600V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
2N6796 IR
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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