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    LTP70N06P

    Abstract: LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V
    Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control UPS RDS ON = 11.5 mΩ, Typ = 9 mΩ


    Original     		LTP70N06P 300us, O-220 LTP70N06P LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V PDF

    LTP*70n06p

    Abstract: ltp70N06 LTP70N06P diode 60v 1a
    Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 11.5 mΩ, Typ = 9 mΩ UPS


    Original     		LTP70N06P LTP*70n06p ltp70N06 LTP70N06P diode 60v 1a PDF

    LTP*70n06p

    Abstract: LTP70N06P LTP70N06 specifications of power mosfet LTP70N
    Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 11.5 mΩ, Typ = 9 mΩ UPS


    Original     		LTP70N06P LTP*70n06p LTP70N06P LTP70N06 specifications of power mosfet LTP70N PDF