1N4099
Abstract: 1N4135 1N4614 1N4615 1N4616 1N4617 1N4627 1M4102 1N4109 MICROSEMI
Text: m C R O SEfll CORP SÌE b ll5 a t,5 D / / Microsemi Corp. •SMAT/l , CA / SCOTTSDALE. A Z / OOOlflbT TSS 1N 4099 thru 1N4135 and 1N4614 thru 1N4627 For more information call: 602 941-6300 K 1#W FEATURES W V SILICON 400 mW LOW NOISE ZENER DIODES • ZENER VOLTAGE 1.8 TO 100 V
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1N4099
1N4135
1N4614
1N4627
MIL-S-19500/435
DO-35
1N4099-1N4135
1N4614-1N4627
25//A
1N4135
1N4615
1N4616
1N4617
1N4627
1M4102
1N4109 MICROSEMI
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tiz zener
Abstract: No abstract text available
Text: 1N3821 thru 1N 3830 A SANTA ANA, CA ¡ SCOTTSDALE. AZ For me 602 941-6300 FEATURES • ZENER VOLTAGE RANGE: 3.3V to 7.5V • 1N3821A-1N3828A HAVE JAN, JANTX and JAN TXV QUALIFICATIONS TO NIIL-S-19500/115 SILICON 1 WATT ZEN ER DIODES M A X IM U M R A T IN G S
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1N3821
1N3821A-1N3828A
NIIL-S-19500/115
1N3821
DQ0377A
tiz zener
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MOTOROLA ZM 1N
Abstract: 1N 2979 1N2970
Text: MOTOROLA < 8 > 10 WATTS ZENER DIODES ZENER DIODES Diffused-junction zener diodes for both m ilitary and highrel labi I ity industrial applications. Available with anode-to-case and cathode-to-case connections standard and reverse polarity , i.e., 1N2970 and 1N2970R. Supplied with m ounting
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1N2970
1N2970R.
MOTOROLA ZM 1N
1N 2979
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a37 zener
Abstract: No abstract text available
Text: 1N5913B thru Micro/semiCorp. 1N5956B f The d ioöe e x p e n s •/ SCOTTSDALE, A Z / For more information call: 602 941-6300 FEATURES SILICO N 1.5 WATT ZENER DIO DES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E SU RGE S TR ESSES • A LS O A V A IL A B L E IN PLASTIC C A S E. C O N S U LT FA C TO R Y.
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1N5913B
1N5956B
DI00E
a37 zener
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IN4620
Abstract: IN4105 1N4F Diode 1N41 IN411 1N4019 1N4099 1N4135 1N461 1N4614
Text: Micro/semi Corp. ? The diode experts SCOTTSDALE, AZ F o r m o re in fo r m a tio n call: 602 941-6300 1N4099 thru 1N4135 and 1N4614 thru 1N4627 DO-7 FEATURES • SILICON 400 mW LOW NOISE ZENER DIODES ZENER V O LT A G E 1.8V to 100V • ALL HAVE JAN, JANTX and JANTXV
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1N4099
1N4135
1N4614
1N4627
MIL-S-19500/435
66mW/Â
1N4099-1N4135
1N4614-1N4627
IN4620
IN4105
1N4F
Diode 1N41
IN411
1N4019
1N461
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1N41118
Abstract: 1N4617B 1N4620B 1N4621B 1N4623B 1N4624B 1N4114B 1N4102B
Text: ZENER DIODES, LOW CURRENT, LOW NOISE 400mW Maximum Maximum R e v e rs e M aximum Leakage Current Z en er Zen er Not e at T. = 25°C Test Im pedance D ensity Current Nl @ I,. Current Nom inal lisiiil 1M1I Voltage NUfflbef M, V otts 1 <uA) 1N46148 1N46158 1N4616B
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400mW
1N4614S
1N46158
1N4616B
1N4617B
1N46180
1N4S19B
1N4620B
1N4621B
1N4622S
1N41118
1N4623B
1N4624B
1N4114B
1N4102B
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LA 4108
Abstract: IC LA 4127 zener diod 18v Diode LT 4109
Text: Micro/semiCorp. $ Trie diod e experts SANTA ANA, CA SCOTTSDALE, AZ For more information call: 602 941-6300 1N 4 0 9 9 thru 1 N 41 3 5 and 1 N 4 6 1 4 thru 1N 46 2 7 DO-7 FEATURES • ZENER V O LTA G E 1.8V to 100V • • ALL HAVE JAN, JANTX and JANTXV QUALIFICATIONS TO MIL-S-19500/435
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MIL-S-19500/435
1N4099-1N4135
1N4614-1N4627
LA 4108
IC LA 4127
zener diod 18v
Diode LT 4109
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1NS92S
Abstract: 1N3914 5956b 1N5915
Text: 1N 5913B thru 1N 5956B Mierosemi Corp. y The a<oú€ experts / SANTA A N A , CA SC O T T SD A L E , A Z F o r m o re in fo rm a tio n call: 602 941-6300 SILICON 1.5 WATT ZENER DIODES FEA TU R ES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES
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5913B
5956B
1NS92S
1N3914
5956b
1N5915
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1N474SA
Abstract: No abstract text available
Text: OGGGGOb S 24E D R F ELECTRONICS INC DO-41 Features • Silicon Planar diode, double heat sink, • Storage Temperature—65°C~+175°C • Junction Temperature ~175 °C 1N47 Series 1 Watt Glass Zener Diodes In DO-41 Package Device Typ* 1N4728A 1N4729A 1N4730A
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DO-41
DO-41
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N474SA
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1N5917
Abstract: 1NS927
Text: 1N5913B thru 1N5956B Microsemi Corp. é The d'Ode o oe rrs SCOTTSDALE , A Z For m ore in fo rm a tio n call: ?W 6 02 941-6300 SILICON 1.5 WATT ZENER DIODES FEATURES • Z E N E R V O LT A G E 3.3V TO 200V • W ITHSTANDS LA R G E S U R G E S TR ES S ES
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1N5913B
1N5956B
1N5913
1N5914
1H5915
1N5916
1N5917
1N5918
1N5919
1N5920
1NS927
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ZD 103 ma
Abstract: LT/SG3527A op292g AD8436
Text: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004
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Original
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AD8534
SC705
OT-235
ST07377-
ZD 103 ma
LT/SG3527A
op292g
AD8436
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PDF
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Untitled
Abstract: No abstract text available
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D 23025S4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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23025S4
CDLL6309
CDLL6355
500mW
33mW/C
200mA:
CDLL6309
CDLL6310
C0LL6311
CDLL6312
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ams SOT23
Abstract: No abstract text available
Text: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on
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MMBZ5226
MMBZ5262
T00037Ö
ams SOT23
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STMicroelectronics datasheet LF33
Abstract: MELF dimensions st CDLL6309 CDLL6310 CDLL6312 CDLL6313 CDLL6314 CDLL6315 CDLL6316 CDLL6317
Text: c o m p e n s a t e » d e v i c e s T nT ZOE D S3DSSS4 0000337 L. T - n - n • ZENER DIODE f • LEADLESS PACKAGE FOR SURFACE MOUNT CDLL6309 • LOW REVERSE LEAKAGE CHARACTERISTICS thru CDLL6355 • LOW NOISE CHARACTERISTICS • DOUBLE SLUG CONSTRUCTION
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CDLL6309
CDLL6355
500mW
33mW/C
200mA:
250pA
250/iA
DO-213AA
DO-213AB
STMicroelectronics datasheet LF33
MELF dimensions st
CDLL6309
CDLL6310
CDLL6312
CDLL6313
CDLL6314
CDLL6315
CDLL6316
CDLL6317
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 410m W BZT52 SERIES CASE TYPE: SOD-123 m D ynam ic R esistance Z aner VoftageW at lz = 5 m A Type V zV at lz > S m A f a lt t f e at Iz = 1 mA f> 1 kHz Rj U Rj Q Tam p. Coeft. of Zaner Voltage at Iz * 5 raA a vz ~*/K A d m lssab la Z eaar currentW
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BZT52
OD-123
BZT52-C2V4
BZT52-C2V7
BZT52-C3
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
BZT52-C4V7
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AD659
Abstract: No abstract text available
Text: A N A LO G D E V IC E S ” fí^'j 1 " FEATURES Complete 16-Bit D/A Function On-Chip Output Amplifier , High Stability Buried Zener Reference Monolithic BiMOS II Construction ±1 LSB Integral Linearity Error 15-Bit Monotonic over Temperature Microprocessor Compatible
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16-Bit
15-Bit
MIL-STD-883
-AD669AN
AD669A
669BN
AD669JBR
AD659
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PDF
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Diode 1N41
Abstract: No abstract text available
Text: Microsemi Corp. f The diode experts SCOTTSDALE, A Z Fo r m o re i nf o r m a t io n call: 602 941-6300 FEATURES 1N 4099 thru 1N 4135 and 1N 4614 thru 1N 4627 D O -3 5 SILICON 500 mW LOW NOISE ZENER DIODES • Z E N E R VO L TA GE 1.8 TO 100 V • A L L HAVE J A N . J A N T X A ND J A N T X V - 1 Q UA LI F I C A TI O NS
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MIL-S-19500/435
DO-35
4099-1N
1N4614
1N4627
Diode 1N41
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PDF
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9.1 ZPD
Abstract: ZMM12
Text: ZMM2,7 i thru ZMM51 MINI-MELF-SMD Use Advantages 0.5 Watt Zener Diodes This family is equivalent to the European PRO Electron types. The specifications reflect similar low zener test currents over voltage ranges. For use in clipping and stabilizing circuits, where real protection is needed.
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ZMM51
OD-323
LL-35
9.1 ZPD
ZMM12
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C0811
Abstract: 1N2828B DIODE YV 950 zener 245 245 zener in4562b 1N2804 1N4557B 1N4558B 1N4559B
Text: 1 N 2 8 0 4 th ru 1NI2846B a nd 1 N 4 5 5 7 B th ru 1N4564B Microsemi Corp. FEATURES SILICO N 50 WATT Z E N E R D IO D E S • ZENER VOLTAGE 3.9V to 200V • AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 % • DESIGNED FOR MILITARY ENVIRONMENTS See Below
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1N2804
1NI2846B
1N4557B
1N4564B
C0811
N4557B1'
N45b3B
1N2828B
DIODE YV 950
zener 245
245 zener
in4562b
1N4558B
1N4559B
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PDF
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 1.5 Watts lliil s llilf l P a rt N um ber 1N 5913 1145914 1145915 1N 5916 1145917 1145918 1145919 1145920 1145521 1N 5922 N o m in a l Zener V o lta g e llill! Zener Test C u rre n t M a x im u m Zener m p e d a m te
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1N4729A
Abstract: BKC Semiconductors 1N4743A LL41 1n4733a melf 1N4755A SMD 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Text: DO-41 glass 1 Watt Use Advantages Zener Diodes 1N4729A thru 1N4764A Ideal for use as tow cost, general purpose regulators and protection devices. Used in hostile environments where long term reliability is important. Competitive reptacementfor plastic 00-41 zener diodes.
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1N4729A
1N4764A
DO-41
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4729A
BKC Semiconductors
1N4743A LL41
1n4733a melf
1N4755A SMD
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
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PDF
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2M4735A
Abstract: ZM4728A ZM4729A ZM4730A ZM4731A ZM4732A ZM4733A ZM4734A ZM4736A ZM4737A
Text: ZENER DIODES, SURFACE MOUNT, MELF PACVKAGE 1 Watt <1ED£C P a rt Num ber Nom inal M axim um Zener Z en e r Zener Voltage Im pedance Test C urrent Z jt at l»r M axim um Knee Im pedance M axim um R everse C u rre n t a tT ,= 2 5 C M axim um M axim um S urge
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ZM4728A
ZM4729A
ZM4730A
ZM4731A
ZM4732A
ZM4733A
ZM4734A
2M4735A
ZM4736A
ZM4769
ZM4737A
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PDF
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DO213AB
Abstract: DSAIH0002550 DO-213AB footprint
Text: MELF- 1.5 Watt Use Advantages Zener Diodes LL5922B thru LL5958B Cost effective replacement for plastic SMB zener diodes. Occupies the same footprint as SMB, no PC board rework. LL-41 MELF vs. SMB - savings of up to 50% are possible. Compatible with all major automatic pick and place SM mounting equipment.
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LL5922B
LL5958B
LL-41
DO-41
DO213AB
DSAIH0002550
DO-213AB footprint
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PDF
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955B
Abstract: diode zener ZL 15 932B diode 946b 1SMB5926 1SMB5927 1SMB5928 1SMB5956 926B 932B diode zener
Text: TAIWAN SEMICONDUCTOR [ s Pb RoHS COMPLIANCE 1SMB5926 - 1SMB5956 3.0 Watts Surface Mount Silicon Zener Diode SMB/DO-214AA .083 2.10 .077(1.95) nI u Features •> -v-y-y- . * .147(3.73) ,137(3.48) * F o r surface m ounted applications in ord er to o ptim ize board sp ace
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1SMB5926
1SMB5956
SMB/DO-214AA
MIL-STD-750,
1SMB5956)
955B
diode zener ZL 15
932B diode
946b
1SMB5927
1SMB5928
926B
932B diode zener
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