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    Untitled

    Abstract: No abstract text available
    Text: I LSQ1130 PNP General Purpose Amplifiers and Switches V 0040472 Device No. PN3638 Ob? PN3638A PN3644 PN3645 PN4143 TIS93 TN2905A Case Style TO-92 92 TO-92 (92) TO-92 (92) TO-92 (92) TO-92 (92) CB O V CEO V EB O (V) Min (V) Min (V) Min 25 25 4 25 45 60 60


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    PDF LSQ1130 PN3638 PN3638A PN3644 PN3645 PN4143 TIS93 TN2905A O-226

    SOT 23 1ft

    Abstract: 2N5484 2NS484 MMBF5484 1Ft SOT23 transconductance 2N5485 2N5485 2N5486 MMBF5485 MMBF5486
    Text: Semiconductor 2N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 •# SOT-23 S N-Channel RF Amplifier This device is designed primarily for electronic switching applications such a s low On Resistance analog switching. Sourced from P rocess 50. Absolute Maximum Ratings*


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    PDF N5484 2N5485 2N5486 MMBF5484 MMBF5485 MMBF5486 OT-23 SOT 23 1ft 2N5484 2NS484 1Ft SOT23 transconductance 2N5485 2N5486 MMBF5486

    NDS9945

    Abstract: 2501lA
    Text: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.


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    PDF NDS9945 bSD113G b5G1130 004DGDÃ NDS9945 2501lA