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    LSE 0405 Search Results

    LSE 0405 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PCV-2-104-05L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-1-104-05L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-0-104-05L Coilcraft Inc General Purpose Inductor, 100uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    PCV-1-304-05L Coilcraft Inc General Purpose Inductor, 300uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    RAA230405GNP Renesas Electronics Corporation ICs for Microcontroller Power Supply System, VQFN-32, /Embossed Tape Visit Renesas Electronics Corporation

    LSE 0405 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IEC61000-6-3

    Abstract: LDM35 LSE 0405 SPDT Relay 20v 16A LDM35HLSE
    Text: Digital Panel Meters DC/AC Current and Voltage Indicator/Controller Type LDM35H • • • • • • • • Multi-input instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales


    Original     		PDF LDM35H 200mV 18-60VAC/DC 90-260VAC/DC LDM35HDS IEC61000-6-3 LDM35 LSE 0405 SPDT Relay 20v 16A LDM35HLSE

    Untitled

    Abstract: No abstract text available
    Text: Digital Panel Meters DC/AC Current and Voltage Indicator/Controller Type LDM35H • • • • • • • • Multi-input instrument 3 1/2 dgt LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales


    Original     		PDF LDM35H 200mV 18-60VAC/DC 90-260VAC/DC LDM35HDS

    LTS-312 R

    Abstract: No abstract text available
    Text: COMPONENT RESEARCH CO I LSE D • 2303T11 0000711 G I^O Component Research - c r c J - S20 ■ M ETALLIZED POLYCARBONATE CAPACITOR G 1 2 S P E C IF IC A T IO N S M e ta llize d polycarbonate d ie le c tric , h e rm etically sealed, extended m etal film electrodes,


    OCR Scan     		PDF 2303T11 LTS-312 R

    8U806

    Abstract: 1 L 0380 R 14J7 2j0115
    Text: MOTO RO LA SC XSTRS/R 12 E D I b3b?asM GoaMaas a | T-zyi* F MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 .0 AM PERE DARLINGTON NPN POWER TRANSISTORS N PN D A R L IN G T O N P O W E R T R A N S IS T O R S 6 0 W ATTS 160 and 2 00 V O LTS These Darlington transistors are high voltage, high speed devices


    OCR Scan     		PDF T0-220AB 8U806 BU807 1 L 0380 R 14J7 2j0115

    Untitled

    Abstract: No abstract text available
    Text: 1991 LSI/CSI LS7501 LS7510 • 1235 W a lt W h itm a n R o a d , M elv ille, N Y 11747 • T e l.: 516 271-0400 • F a x : (516 271-0405 • T W X : (510) 226-7833 Revised July 1989 TONE ACTIVATED LINE ISOLATION DEVICE FEATURES: • Low power CMOS design


    OCR Scan     		PDF LS7501 LS7510 768HZ LS7502. 2713Hz LS7501-LS7510

    TIP308

    Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
    Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC


    OCR Scan     		PDF b3b7254 TIP29 T1P29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP308 woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1236A MicroManager Chip FEATURES PIN ASSIGNM ENT • H olds m ic ro p ro c e s s o r in c h e c k d u rin g p o w e r vbatE tra n s ie n ts vcco[ • H a lts a n d re starts a n o u t-o f-c o n tro l m ic ro p ro c e s s o r vcc[ • M o n ito rs p u s h b u tto n fo r e x te rn a l o v e rrid e


    OCR Scan     		PDF

    S1998

    Abstract: .5555b AS29F040 29F040-70
    Text: H ig h p e r f o r m a n c e S1ZKX8 5 V C M O S F la s h E E PR O M •■ II A S29F040 5 1 2K x 8 CMOS Fiash EEPROM Preliminary information Features • Organization: 512KX8 • Sector architecture • Low pow er consumption - 3 0 m A m axim um read current


    OCR Scan     		PDF 512KX8 5S/70/90/120/150 32-pin AS29F040-5STC AS29F040-70TC AS29F040-70TI AS29F040-90TC AS29F040-90TI S1998 .5555b AS29F040 29F040-70

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA B U Z80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate This TM O S P ow er FET is designed fo r high voltage, h ig h speed, lo w loss p o w e r s w itc h in g a pp licatio n s, such


    OCR Scan     		PDF AN569,

    IR 444 H

    Abstract: f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode
    Text: ’ FDH/FDLL 400 / 444 C O L O R 8 A N D M AR K IN G D EV ICE FD LL400 FD LL444 1 ST B A N D 2N D BAWD BRO W N BRO W N V IO L E T GRAY L L-3 4 D O -3 5 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL High Voltage General Purpose Diode


    OCR Scan     		PDF LL-34 DO-35 MMBD1401-1405 FDWFDLL444 FDWFDLL400 FDHVFDLL444 FDH/FDLL400 FDH/FDLL444 IR 444 H f 1405 zs FDLL400 FDLL444 DIODE marking 327 fdh 444 diode

    LS7210

    Abstract: 47k0 "digital delay" 14
    Text: JUN 6 1991 LSI/CSI Ê:r LS7210 Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, NY 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405 • TWX: (510) 226-7833 Revised October 1990 PROGRAMMABLE DIGITAL DELAY TIMER


    OCR Scan     		PDF LS7210 LS7210 47Kfi 005mF LS72K 47k0 "digital delay" 14

    IRF 450 MOSFET

    Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
    Text: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high


    OCR Scan     		PDF IRF820 IRF821 IRF823 221a-04 tq-220ab IRF821. IRF 450 MOSFET IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821

    SG3526

    Abstract: sg1526 7m 0880 IC SG3526J 033S sg1526 power supply
    Text: SG1526 SG2526 SG3526 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA P U L S E W ID T H M O D U L A T IO N C O N T R O L C IR C U IT T h e S G 1 5 2 6 is a h ig h p e rfo rm a n c e p u ls e w id th m o d u la to r in te ­ g ra te d circu it in te n d e d for fixe d fre q u e n c y s w it c h in g r e g u la t o r s a n d


    OCR Scan     		PDF SG1526 SG2526 SG3526 A00WBC Y1U19C. M98SC SG3526 7m 0880 IC SG3526J 033S sg1526 power supply

    T39 diode

    Abstract: No abstract text available
    Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,


    OCR Scan     		PDF 3b7254 IRFZ34/D C65M2 IRFZ34 T39 diode

    FIFO 32x8

    Abstract: 1553 bus controller
    Text: WHITE / M IC R O E L E C T R O N IC S WA-A3XXX ATLAS 603e PERIPHERAL PROCESSOR MODULAR ADVANCED * FEATURES • 1553B Remote T e rm in a l/B u s C o n tro lle r Interfa ce C lock Frequencies: 25, 33, 40 M H z ■ 16 P rogram m able Chip S elects Packaging:


    OCR Scan     		PDF 447-pin 1553B describ17 484-ball FIFO 32x8 1553 bus controller

    LS7503

    Abstract: d 2923 LS7501 LS7502 LS7504 LS7505 LS7506 LS7507 LS7508 LS7510
    Text: LSI/CSI TONE ACTIVATED LINE ISOLATION DEVICE FEATURES: • Low power CMOS design • On chip oscillator 32,768HZ external crystal required • Tone input can be low level sinusoid (as low as — 30 DBM) or fully digital. • Mask programmable available frequencies: 11 HZ to 4095


    OCR Scan     		PDF 768HZ LS7501 LS7510 LS7501 LS7502 32KHz LS7503 d 2923 LS7504 LS7505 LS7506 LS7507 LS7508

    NE556 pin configuration

    Abstract: CE100M NE556-1 equivalent NE556n pin configuration NE556-1 NE5561 ne556n equivalent ne556 ne 556 applications ne 556 timer
    Text: Product specification Philips Semiconductors Linear Products Dual timer NE/SA/SE556/NE556-1 PIN CONFIGURATION DESCRIPTION Both the 556 and 556-1 Dual Monolithic timing circuits are highly stable controllers capable of producing accurate time delays or oscillation. The 556 and 556-1 are a dual 555. Timing is provided by


    OCR Scan     		PDF NE/SA/SE556/NE556-1 200mA. NE556 pin configuration CE100M NE556-1 equivalent NE556n pin configuration NE556-1 NE5561 ne556n equivalent ne556 ne 556 applications ne 556 timer

    Untitled

    Abstract: No abstract text available
    Text: WHITE / M I C R O E L E C T R O N I C S W A-A1XXX ATLAS 68020/68040 PERIPHERAL PROCESSOR MODULAR ADVANCED* FEATURES • 6 8 0 2 0 and 68040 M ic ro p ro c e s s o r Interfaces ■ 1553B Remote Term inal Interfa ce ■ C lock Frequencies: 16, 20, 25 M H z 68020


    OCR Scan     		PDF 447-pin 1553B 484-ball

    a39 zener diode

    Abstract: No abstract text available
    Text: MOTORCLA SC IME D I b3b?2S4 00^031? 2 | XSTRS/R F 7 ~ -3 7 - / 3 MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA MTP25IM06E Designer's Data Sheet TM OS IV Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced " E " series of TM O S power M O SFET s is designed to withstand high


    OCR Scan     		PDF MTP25IM06E a39 zener diode

    XSTR

    Abstract: 221A-04 AN569 MTP20N10E mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA SC XSTRS/R F 14E D I b3t7aSM 0 0^ 030 0 7 I 7 ^ 3 7 - M O TO ROLA • SEMICONDUCTOR TECHNICAL DATA. M TP 20N 10E Designer's Data Sheet T M O S IV P o w e r F ie ld E f f e c t T r a n s is t o r T M O S P O W E R FET 20 A M P E R E S N-Channel Enhancem ent-M ode S ilic o n G ate


    OCR Scan     		PDF 21A-04 O-220AB XSTR 221A-04 AN569 MTP20N10E mosfet transistor 400 volts.100 amperes

    IRPF 250 N transistor

    Abstract: IRPF 250 N IRPF 260 N transistor IRPF 150 IRPF 250 MTP25N05E IRPF 221A-04 25CC a/IRPF 250 NO transistor
    Text: MOTOROLA SC XSTRS/R IM E'D I F b3k?2S4 0CHÜ311 -T -Ò 9 -/3 , ‘ MO TO ROLA l | • SEM IC O N D U CTO R TECHNICAL DATA MTP25N05E D esigner's Data Sh eet T M O S IV P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilico n G ate T h is ad van ced " E " s e rie s o f T M O S p o w er M O S F E T s is d esig ned to w ith stan d high


    OCR Scan     		PDF T-39-/Z YI45M, IRPF 250 N transistor IRPF 250 N IRPF 260 N transistor IRPF 150 IRPF 250 MTP25N05E IRPF 221A-04 25CC a/IRPF 250 NO transistor

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1238 MicroManager PIN ASSIGNMENT FEATURES • H o ld s m ic ro p ro c e s s o r in check d u rin g power lC 7 VBAT tra n s ie n ts ] RST vcco[ ] RST vcc[ ] WDS g n d [ ] CEI p f [ ] CEO • H alts and re s ta rts an o u t-o f-c o n tro l m ic ro p ro c e s s o r


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCM6929/D SEMICONDUCTOR TECHNICAL DATA MCM6929 Product Preview 256K x 4 Bit Fast Static Random Access Memory The MCM6929 is a 1,048,576 bit static random access memory organized as 262,144 words of 4 bits. This device is fabricated using high performance silico n gate BiCMOS technology. Static design eliminates the need for external clocks


    OCR Scan     		PDF MCM6929/D MCM6929 MCM6929

    Untitled

    Abstract: No abstract text available
    Text: H igh perform an ce 512K X 8 5 V CMOS Flash EEPROM n A S29F040 II. II W llh . 5 1 2 K x 8 CM O S Flash EEPROM Preliminary information Features • Low pow er consum ption • Organization: 512K X 8 • Sector architecture • • • • - 3 0 m A m ax im u m read current


    OCR Scan     		PDF S29F040 040-90T -120TC -150TC 040-55L 040-70L 040-90L 040-150L