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    LRP PACKAGE PACKAGE Search Results

    LRP PACKAGE PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    LRP PACKAGE PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HRF22

    Abstract: Hitachi DSA00358
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22


    Original     		PDF HRF22 ADE-208-163D HRF22 Hitachi DSA00358

    HRF32

    Abstract: Hitachi DSA00358 Hitachi DSA0035
    Text: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32


    Original     		PDF HRF32 ADE-208-164D HRF32 Hitachi DSA00358 Hitachi DSA0035

    Hitachi DSA00279

    Abstract: mark SIN
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark


    Original     		PDF HRF22 ADE-208-163D HRF22 10msec Hitachi DSA00279 mark SIN

    HZF22BP

    Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129B HZF27BP HZF36CP HZF15CP HZF22BP HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22

    ADE-208-129

    Abstract: BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129 Z Preliminary Rev. 0 Aug. 1993 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129 ADE-208-129 BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20

    HZF16BP

    Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-129A HZF15CP HZF16BP code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18

    diode cross reference 1s1555

    Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
    Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,


    Original     		PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153

    Hitachi DSA0077

    Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
    Text: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information


    Original     		PDF ADE-208-163C HRF22 10msec HRF32 Hitachi DSA0077 Hitachi DSA00770 HRF22 HRF32 mark 32

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 90V, IO = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		PDF HRF32 ADE-208-164B 12Vmax. 10msec Hitachi DSA001653

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 40V, IO = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		PDF HRF22 ADE-208-163B 10msec Hitachi DSA001653

    MB81P643287

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-2E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate


    Original     		PDF DS05-11402-2E MB81P643287-50/-60 144-WORD MB81P643287 32-bit

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate


    Original     		PDF DS05-11402-1E MB81P643287-50/-60 144-WORD MB81P643287 32-bit F0005

    i2s philips

    Abstract: philips home theatre MO-150 WM8720 WM8720EDS
    Text: WM8720 24-bit, 96kHz Stereo DAC with Volume Control DESCRIPTION FEATURES • The WM8720 is a high performance stereo DAC designed for audio applications such as CD, DVD, home theatre systems, set top boxes and digital TV. The WM8720 supports data input word lengths from 16 to 24-bits and


    Original     		PDF WM8720 24-bit, 96kHz WM8720 24-bits 96kHz. 20-pin i2s philips philips home theatre MO-150 WM8720EDS

    PCM1716

    Abstract: PCM1716E
    Text: PCM1716 49% 1 716 FPO PCM 24-Bit, 96kHz Sampling CMOS Delta-Sigma Stereo Audio DIGITAL-TO-ANALOG CONVERTER TM FEATURES DESCRIPTION ● ENHANCED MULTI-LEVEL DELTA-SIGMA DAC ● SAMPLING FREQUENCY fs : 16kHz - 96kHz ● INPUT AUDIO DATA WORD: 16-, 20-, 24-Bit


    Original     		PDF PCM1716 24-Bit, 96kHz 16kHz 96kHz 24-Bit 106dB 002dB 28-LEAD PCM1716 PCM1716E

    Untitled

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208-129B HZF10 HZF11 HZF27 HZF24 HZF22 HZF20 HZF18 HZF16 HZF15

    HZF10

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208- 129B Z Rev 2 Features • W ide spectrum from • 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF ADE-208- HZF30 HZF33 HZF36 HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF10

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.


    OCR Scan     		PDF ADE-208-163B HRF22 10msec HRF22

    Untitled

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 40V, I0 = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		PDF HRF22 ADE-208-163B 10msec

    Untitled

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 90V, I0 = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		PDF HRF32 ADE-208-164B 12Vmax. 10msec

    UMN6450X

    Abstract: No abstract text available
    Text: HALL EFFECT VANE SWITCH A rugged magnetically activated Hall-effect vane switch, the UMN6450X can directly replace less robust optical equivalents. Ideal for critical applications requiring the ability to withstand hostile electrical, chemical and mechanical environments, each vane switch is housed in


    OCR Scan     		PDF UMN6450X

    N-6450

    Abstract: N6450X
    Text: 6450 HALL EFFECT VANE SWITCH A rugged m agnetically activated Hall-effect vane switch, the UM N6450X can directly replace less robust optical equivalents. Ideal for critical applications requiring the ability to withstand hostile electrical, chem ical and m echanical environm ents, each vane switch is housed in


    OCR Scan     		PDF N6450X N-6450

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N PCM1716 24-Bit, 96kHz Sampling CMOS Delta-Sigma Stereo Audio DIGITAL-TO-ANALOG CONVERTER DESCRIPTION FEATURES • ENHANCED MULTI-LEVEL DELTA-SIGMA DAC • SAMPLING FREQUENCY fs : 16kHz - 96kHz • INPUT AUDIO DATA WORD: 16-, 20-, 24-Bit


    OCR Scan     		PDF PCM1716 24-Bit, 96kHz 16kHz 96kHz 24-Bit -96dB 106dB -82dB

    2sk122

    Abstract: HA11511CNT HA17384 2SC2611 HRP100 2sc2610 ha17385 2SC4927 1ss81 HA16666
    Text: 30 HITACHI 5.5 Power Conversion 1 Switching Power Supply Control ICs range Type,No Vcc (V) max ICC imA) max F (kHz) max HA16654A 40 13 HA16664A 40 HA16666 Introduction lo (mA) max Topr fC ) 500 100 -20 to +85 Suitable for DP-18 FP-14 forward method 7 200


    OCR Scan     		PDF HA16654A DP-18 HAI66S4A FP-14 HA16666 DP-16 FP-16 HA16107 FP-16 2sk122 HA11511CNT HA17384 2SC2611 HRP100 2sc2610 ha17385 2SC4927 1ss81

    Untitled

    Abstract: No abstract text available
    Text: HB56D132BR-8/10/12 1,048,576-Word x 32-Bit High Density Dynamic RAM Module • DESCRIPTION PIN DESCRIPTION The HB56D132BR is a 1M x 32 dynamic RAM module, mounted 8 pieces of 4Mbit DRAM HM514400JP sealed in SOJ package. An outline of the HB56D132BR is 72-pin single in-line package. There­


    OCR Scan     		PDF HB56D132BR-8/10/12 576-Word 32-Bit HB56D132BR HM514400JP) 72-pin HB56D132BR-8/10/12--------------------â