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    LRP PACKAGE PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    LRP PACKAGE PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HRF22

    Abstract: Hitachi DSA00358
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22


    Original     		HRF22 ADE-208-163D HRF22 Hitachi DSA00358 PDF

    HRF32

    Abstract: Hitachi DSA00358 Hitachi DSA0035
    Text: HRF32 Silicon Schottky Barrier Diode for Rectifying ADE-208-164D Z Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF32 32 LRP Outline 1 32


    Original     		HRF32 ADE-208-164D HRF32 Hitachi DSA00358 Hitachi DSA0035 PDF

    Hitachi DSA00279

    Abstract: mark SIN
    Text: HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D Z Rev 4 Features • Good for high-frequency rectify. • LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark


    Original     		HRF22 ADE-208-163D HRF22 10msec Hitachi DSA00279 mark SIN PDF

    HZF22BP

    Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		ADE-208-129B HZF27BP HZF36CP HZF15CP HZF22BP HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22 PDF

    ADE-208-129

    Abstract: BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129 Z Preliminary Rev. 0 Aug. 1993 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		ADE-208-129 ADE-208-129 BP 34 hzf15bp HZF10 HZF11BP HZF22BP HZF7.5 HZF6.8 HZF36 HZF20 PDF

    HZF16BP

    Abstract: code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		ADE-208-129A HZF15CP HZF16BP code 6bp HZF12BP HZF10 HZF11 HZF12 HZF13 HZF15 zener z5.6bp HZF18 PDF

    BP 34 datasheet

    Abstract: HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter ADE-208-129B Z Rev 2 Jul. 1997 Features • • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. LRP package is suitable for high density surface mounting and high speed assembly.


    Original     		ADE-208-129B BP 34 datasheet HZF10 HZF11 HZF12 HZF13 HZF15 HZF16 HZF18 HZF20 HZF22 PDF

    diode cross reference 1s1555

    Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
    Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,


    Original     		DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153 PDF

    Hitachi DSA0077

    Abstract: Hitachi DSA00770 HRF22 HRF32 mark 32
    Text: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for VR=40V, Io=1.0A, Output voltage=6Vmax. Cathode mark Mark • LRP structure ensures higher reliability. 1 Ordering Information


    Original     		ADE-208-163C HRF22 10msec HRF32 Hitachi DSA0077 Hitachi DSA00770 HRF22 HRF32 mark 32 PDF

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 90V, IO = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		HRF32 ADE-208-164B 12Vmax. 10msec Hitachi DSA001653 PDF

    Hitachi DSA001653

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for VR = 40V, IO = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    Original     		HRF22 ADE-208-163B 10msec Hitachi DSA001653 PDF

    F 82 bp

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter Features Outline • Wide spectrum from 1.88 V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		PDF

    HZF10

    Abstract: HZF6.8 ADE-208-129B
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		ADE-208-129B HZF27 HZF24 HZF22 HZF20 HZF18 HZF16 HZF15 HZF13 HZF12 HZF10 HZF6.8 PDF

    Untitled

    Abstract: No abstract text available
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129B Z Rev 2 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		ADE-208-129B HZF10 HZF11 HZF27 HZF24 HZF22 HZF20 HZF18 HZF16 HZF15 PDF

    LRP PACKAGE

    Abstract: CP4020 HZF Series
    Text: HZF Series Silicon Epitaxial Planar Zener Diodes for Voltage Controller & Voltage Limitter HITACHI ADE-208-129A Z Rev 1 Jan. 1997 Features • Wide spectrum from 1.88V through 40V of zener voltage provide flexible application. • LRP package is suitable for high density surface mounting and high speed assembly.


    OCR Scan     		ADE-208-129A LRP PACKAGE CP4020 HZF Series PDF

    1SS106

    Abstract: 1SS119 1SS172 1SS108
    Text: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©


    OCR Scan     		1S1146 1S2074® 1S2075® 1S2076 1S2076A 1SS81 1SS82 1SS83 1SS84 1SS85 1SS106 1SS119 1SS172 1SS108 PDF

    1SS106

    Abstract: pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277
    Text: Package Wise Guide Switching Diode Signal Processing Plastic SMD1 Application MPAK Highspeed switching HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C High voltage switching HSM83 Glass SMD2 Insertion Type URP DO-35 MHD LLD 1N4148 1 S 2 0 7 4 '1 1S2075 *1


    OCR Scan     		DO-35 HSM123 HSM124S HSM221C HSM223C HSM2836C HSM2838C 1N4148 1S2075® 1S2076 1SS106 pin diode do35 HSM8 HSM126S DO-35 rectifier HVU12 lld zener HSK277 SMD DIODE 1N4148 PACKAGE hsu277 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-163B Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Rev. 2 Nov. 1994 Outline Features • G ood for high-frequency rectify for V r = 40V, Io=1.0A, Output voltage=6Vm ax. Cathode mark Mark • LRP structure ensures higher reliability.


    OCR Scan     		ADE-208-163B HRF22 10msec HRF22 PDF

    Untitled

    Abstract: No abstract text available
    Text: HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-163B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 40V, I0 = 1.0A, Output voltage = 6Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		HRF22 ADE-208-163B 10msec PDF

    Untitled

    Abstract: No abstract text available
    Text: ADE-208-163C Z HRF22 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r =40V, Io=1.0A, Output voltage=6Vmax. • LRP structure ensures higher reliability. Cathode mark


    OCR Scan     		HRF22 ADE-208-163C 10msec HRF22 PDF

    Untitled

    Abstract: No abstract text available
    Text: HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI ADE-208-164B Z Rev. 2 Nov. 1994 Features • Good for high-frequency rectify for V R= 90V, I0 = 1.0A, Output voltage = 12Vmax. • LRP structure ensures higher reliability. Ordering Information


    OCR Scan     		HRF32 ADE-208-164B 12Vmax. 10msec PDF

    LRP package PACKAGE

    Abstract: lazer
    Text: ADE-208-164C Z HRF32 Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 3 Feb. 1996 Outline • Good for high-frequency rectify for V r=90V, Io=1.0A, Output voltage=12Vmax. • LRP structure ensures higher reliability. Cathode mark


    OCR Scan     		HRF32 12Vmax. ADE-208-164C HRF32 10msec LRP package PACKAGE lazer PDF

    UMN6450X

    Abstract: No abstract text available
    Text: HALL EFFECT VANE SWITCH A rugged magnetically activated Hall-effect vane switch, the UMN6450X can directly replace less robust optical equivalents. Ideal for critical applications requiring the ability to withstand hostile electrical, chemical and mechanical environments, each vane switch is housed in


    OCR Scan     		UMN6450X PDF

    DIODE ED 34

    Abstract: 1N4446 1N4446M LL4446
    Text: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4446 1N4446M LL4446 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n


    OCR Scan     		1N4446 1N4446M LL4446 LL-34 100pA DIODE ED 34 PDF