1000C
Abstract: MMSF4P01HD
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Previevv HDTMOSTM E=FEWM High Energy Power FET lP4XameH EnhancementEModeSilicon Gate MMsF4Po~ Meteroh Pmfemed km Oevke This advanced high-cell density HDTMOS E-FET is designed to withstand high energy in the avalanche and mmmutation modes.
|
Original
|
PDF
|
1250C)
MMSF4P01HD
1000C
MMSF4P01HD
|
8Q transistor
Abstract: 8G89
Text: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X 58J? K@>?K 8E; =CLO GIFF=<; KPG<J 8M8@C89C<
|
Original
|
PDF
|
8BAF68F
8Q transistor
8G89
|
8Q transistor
Abstract: 1E 8J x30u
Text: =;020; @>A>6FGD: =><= CBI:D D:?6J ;OLYZWOX X ihu JN@K:?@E> :8G89@C@KP X mB4 ;@<C<:KI@: JKI<E>K? b9<KN<<E :F@C 8E; :FEK8:KJc z@C< ,Ffryikklpi X 1F:B<KJ 8M8@C89C< X i zFID u di zFID v 8E; i zFID w :FE=@>LI8K@FEJ X .C8JK@: J<8C<; 8E; =CLO GIFF=<; KPG<J 8M8@C89C<
|
Original
|
PDF
|
8BAF68F
8Q transistor
1E 8J
x30u
|