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    LP3401LT1G

    Abstract: LP340
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G VDS V = -30V 3 RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology


    Original     		LP3401LT1G 236AB) 3000/Tape LP3401LT3G 10000/Tape OT-23 LP3401LT1G LP340 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP3401LT1G S-LP3401LT1G 30V P-Channel Enhancement-Mode MOSFET VDS V = -30V 3 RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) 1 2 FEATURES Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance


    Original     		LP3401LT1G S-LP3401LT1G AEC-Q101 236AB) LP3401LT3G S-LP3401LT3G 3000/Tape 10000/Tape PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET LP3401LT1G VDS V = -30V 3 RDS(ON) < 70mΩ (VGS = -10V) RDS(ON) < 80mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) 1 2 SOT– 23 (TO–236AB) FEATURES Advanced trench process technology


    Original     		LP3401LT1G 236AB) LP3401LT3G 3000/Tape 10000/Tape OT-23 PDF