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    LP2307LT1G Price and Stock

    LRC Leshan Radio Co Ltd LP2307LT1G

    (Alt: LP2307LT1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Asia LP2307LT1G 15,000 12 Weeks 3,000
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    LP2307LT1G Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. LP2307LT1G ▼ Simple Drive Requirement ▼ Small Package Outline 3 ▼ Surface Mount Device ▼ Pb-Free package is available 1 2 SOT– 23 TO–236AB D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS


    Original     		PDF LP2307LT1G 236AB)

    LP2307LT1G

    Abstract: LP2307
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4A = 60mΩ RDS(ON), Vgs@-2.5V, Ids@-3A = 70 mΩ LP2307LT1G 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2307LT1G 236AB) 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) 10Reel/Inner LP2307LT1G LP2307

    LP2307LT1G

    Abstract: lp2307
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2307LT1G 236AB) 3000/Tape LP2307LT3G 10000/Tape OT-23 LP2307LT1G lp2307

    LP2307LT1G

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G S-LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ 3 Features Advanced trench process technology 1 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2307LT1G S-LP2307LT1G 236AB) AEC-Q101 3000/Tape LP2307LT3G S-LP2307LT3G 10000/Tape LP2307LT1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 16V P-Channel Enhancement-Mode MOSFET LP2307LT1G VDS= -16V RDS ON , Vgs@-4.5V, Ids@-4.7A = 70 mΩ 3 RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance


    Original     		PDF LP2307LT1G 236AB) 3000/Tape LP2307LT3G 10000/Tape OT-23

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062