mosfet SOD 23
Abstract: 33039 marking P5S lp2305
Text: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET VDS= -8V LP2305DSLT1G RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features 1 Advanced trench process technology 2 High Density Cell Design For Ultra Low On-Resistance
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Original
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PDF
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LP2305DSLT1G
236AB)
3000/Tape
LP2305DSLT3G
10000/ture:
195mm
150mm
10Reel/Inner
mosfet SOD 23
33039
marking P5S
lp2305
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 8V P-Channel Enhancement-Mode MOSFET LP2305DSLT1G S-LP2305DSLT1G VDS= -8V RDS ON , Vgs@-4.5V, Ids@"3.5A = 68 mΩ RDS(ON), Vgs@-2.5V, Ids@"3A = 81 mΩ RDS(ON), Vgs@-1.8V, Ids@"2A = 118 mΩ 3 Features Advanced trench process technology
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Original
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PDF
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LP2305DSLT1G
S-LP2305DSLT1G
236AB)
AEC-Q101
OT-23
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