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    LOW VCE SAT PNP Search Results

    LOW VCE SAT PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW VCE SAT PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NSV20200

    Abstract: No abstract text available
    Text: NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20200LT1G, NSV20200LT1G NSS20200L/D NSV20200

    NSS352

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D NSS352

    Untitled

    Abstract: No abstract text available
    Text: NSS40300DDR2G Dual 40 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300DDR2G NSS40300D/D

    nss40600cf8t1g

    Abstract: No abstract text available
    Text: NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40600CF8T1G, SNSS40600CF8T1G NSS40600CF8/D nss40600cf8t1g

    Untitled

    Abstract: No abstract text available
    Text: NSS40400CF8T1G Product Preview 40 V, 7 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40400CF8/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS1C200MZ4/D

    vmt3

    Abstract: NPN, PNP for 500ma, 30v PD 680 2SA1577 2SA1774 2SA2018 2SA2030 2SB1197K 2SB1689 2SB1690K
    Text: We achieved to develop the lowest VCE sat for small surface mount packages. VMT3 size and EMT6 size are available for those Low VCE(sat) transistors. Features Low VCE(sat) Transistors in small surface mount packages! 1 2SA2018 2SA2030 2SA1774 VCE(sat)(V)


    Original     		PDF 2SA2018 2SA2030 2SA1774 2SB1689 2SA1577 500mA 2SB1690K 2SB1197K SC-75A) SC-70) vmt3 NPN, PNP for 500ma, 30v PD 680 2SA1577 2SA1774 2SA2018 2SA2030 2SB1197K 2SB1689 2SB1690K

    Untitled

    Abstract: No abstract text available
    Text: NSS1C200L, NSV1C200L 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS1C200L, NSV1C200L NSS1C200L/D

    Untitled

    Abstract: No abstract text available
    Text: NSS40200UW6T1G, NSV40200UW6T1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40200UW6T1G, NSV40200UW6T1G NSS40200UW6/D

    Untitled

    Abstract: No abstract text available
    Text: NSS1C200MZ4, NSV1C200MZ4 100 V, 2.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS1C200MZ4/D

    SNSS35200MR6T1G

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D

    Untitled

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D

    Untitled

    Abstract: No abstract text available
    Text: NSS35200MR6T1G, SNSS35200MR6T1G 35 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS35200MR6T1G, SNSS35200MR6T1G NSS35200MR6/D

    NSS20300MR6T1G

    Abstract: No abstract text available
    Text: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20300MR6T1G NSS20300MR6/D NSS20300MR6T1G

    marking VE

    Abstract: No abstract text available
    Text: NSS12100XV6T1G Product Preview 12 V, 1 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS12100XV6T1G NSS12100XV63/D marking VE

    Untitled

    Abstract: No abstract text available
    Text: NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS20200LT1G, NSV20200LT1G NSS20200L/D

    Untitled

    Abstract: No abstract text available
    Text: NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40200LT1G, NSV40200LT1G NSS40200L/D

    NSV40200LT1G

    Abstract: No abstract text available
    Text: NSS40200LT1G, NSV40200LT1G 40 V, 4.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These


    Original     		PDF NSS40200LT1G, NSV40200LT1G NSS40200L/D

    NSS40300MZ4T1G

    Abstract: NSS40300MZ4 NSS40300MZ4T3G
    Text: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4T1G NSS40300MZ4 NSS40300MZ4T3G

    SMD TRANSISTOR MARKING 2A

    Abstract: MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A
    Text: Transistors SMD Type Low VCE sat Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SB1424 100MHz SMD TRANSISTOR MARKING 2A MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR 2A MARKING SMD PNP TRANSISTOR R smd 2a transistor 2A marking transistor transistor marking 2a SMD TRANSISTOR MARKING 2A pnp TRANSISTOR SMD 1A TRANSISTOR SMD PNP 1A

    NSV60600MZ4

    Abstract: NSV60600
    Text: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D NSV60600MZ4 NSV60600

    Untitled

    Abstract: No abstract text available
    Text: NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G 60 V, 6.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G NSS60600MZ4/D

    TSB1184A

    Abstract: TSB1184ACP
    Text: TSB1184A Low Vce sat PNP Transistor Pin Assignment: 1. Base 2. Collector 3. Emitter BVCEO = - 50V Ic = - 3A VCE (SAT), = - 0.3V(typ.) @Ic / Ib = - 2A / - 0.1A Features — Ordering Information Low VCE (SAT). Part No. — Excellent DC current gain characteristics


    Original     		PDF TSB1184A TSB1184ACP O-252 380uS, O-252 TSB1184A TSB1184ACP

    NSS40300MZ4

    Abstract: NSS40300MZ4T1G NSS40300MZ4T3G
    Text: NSS40300MZ4 Preferred Device Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


    Original     		PDF NSS40300MZ4 NSS40300MZ4/D NSS40300MZ4 NSS40300MZ4T1G NSS40300MZ4T3G