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    LOW SATURATION OPTO Search Results

    LOW SATURATION OPTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW SATURATION OPTO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    igbt dimmer

    Abstract: FGPF7N60LSD FGPF7N60LSDTU dimmer IGBT
    Text: FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage


    Original     		FGPF7N60LSD O-220F FGPF7N60LSD igbt dimmer FGPF7N60LSDTU dimmer IGBT PDF

    ge tube company

    Abstract: No abstract text available
    Text: FGPF7N60LSD 600V, 7A Low Saturation IGBT CO-PAK Features Description • Low saturation voltage : VCE sat = 1.4 V @ IC = 7A Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage


    Original     		FGPF7N60LSD FGPF7N60LSD O-220F FGPF7N60LSDTU ge tube company PDF

    LED display module

    Abstract: HSOP16 LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F 8ch LOW SATURATION DRIVER HSOP16-P-300 toshiba motor diode 518
    Text: TOSHIBA Silicon Monolithic Bi-Polor Digital Integrated Circuit TD62M8600F TD62M8600F 8CH Low Saturation Voltage Source Driver Product Description: This product is a Multi-Chip IC and incorporates 8 low saturation discrete transistors equipped with Fly-wheeling


    Original     		TD62M8600F HSOP16-P-300: HSOP16 LED display module LOW SATURATION VOLTAGE SOURCE DRIVER TD62M8600F 8ch LOW SATURATION DRIVER HSOP16-P-300 toshiba motor diode 518 PDF

    FPN660A

    Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226
    Text: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol


    Original     		FPN660 FPN660A FPN660 O-226 FPN660A CBVK741B019 F63TNR PN2222N pnp Saturation transistor to-226 PDF

    CBVK741B019

    Abstract: F63TNR FPN430 FPN430A PN2222N
    Text: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol


    Original     		FPN430 FPN430A FPN430 O-226 CBVK741B019 F63TNR FPN430A PN2222N PDF

    SuperSOT-23

    Abstract: FSB560 FSB560A
    Text: FSB560/FSB560A NPN Low Saturation Transistor C Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. E B Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter


    Original     		FSB560/FSB560A SuperSOT-23 FSB560 FSB560A PDF

    FPN530

    Abstract: FPN530A
    Text: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol


    Original     		FPN530 FPN530A FPN530 O-226 FPN530A PDF

    TRANSISTOR 560A

    Abstract: FPN560 FPN560A
    Text: FPN560 / FPN560A FPN560 FPN560A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* Symbol


    Original     		FPN560 FPN560A FPN560 O-226 TRANSISTOR 560A FPN560A PDF

    FPN630

    Abstract: FPN630A
    Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol


    Original     		FPN630 FPN630A FPN630 O-226 FPN630A PDF

    FPN630

    Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
    Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol


    Original     		FPN630 FPN630A FPN630 O-226 FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB560/FSB560A NPN Low Saturation Transistor C Features • These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. E B Absolute Maximum Ratings* Symbol TA=25°C unless otherwise noted Parameter


    Original     		FSB560/FSB560A PDF

    CBVK741B019

    Abstract: F63TNR FPN560 FPN560A PN2222N
    Text: FPN560 / FPN560A FPN560 FPN560A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* Symbol


    Original     		FPN560 FPN560A FPN560 O-226 CBVK741B019 F63TNR FPN560A PN2222N PDF

    Untitled

    Abstract: No abstract text available
    Text: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol


    Original     		FPN660 FPN660A O-226 PDF

    transistor tic 226

    Abstract: CBVK741B019 F63TNR FPN330 FPN330A PN2222N
    Text: FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol


    Original     		FPN330 FPN330A FPN330 O-226 transistor tic 226 CBVK741B019 F63TNR FPN330A PN2222N PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB749 PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. Sourced from process PC. E B SuperSOTTM-3 Ordering Information Part Number Top Mark


    Original     		FSB749 PDF

    CBVK741B019

    Abstract: F63TNR FPN530 FPN530A PN2222N TO-226-AE 226AE
    Text: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol


    Original     		FPN530 FPN530A FPN530 O-226 CBVK741B019 F63TNR FPN530A PN2222N TO-226-AE 226AE PDF

    FPN430

    Abstract: FPN430A
    Text: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol


    Original     		FPN430 FPN430A FPN430 O-226 FPN430A PDF

    ZTX749A

    Abstract: No abstract text available
    Text: ZTX749A ZTX749A PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. C BE TO-226 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO Parameter


    Original     		ZTX749A O-226 ZTX749A PDF

    Untitled

    Abstract: No abstract text available
    Text: NZT660 / NZT660A PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number


    Original     		NZT660 NZT660A OT-223 NZT660 OT-223 PDF

    c 1246

    Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


    Original     		FZT649 OT-223 c 1246 fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units


    Original     		FZT649 OT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1998 FZT749 C B C E SOT-223 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter


    Original     		FZT749 OT-223 PDF

    Untitled

    Abstract: No abstract text available
    Text: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method


    Original     		FSB660A OT-23) PDF

    FZT749

    Abstract: No abstract text available
    Text: FZT749 PNP Low Saturation Transistor Description 4 These devices are designed with high-current gain and low saturation voltage with collector currents up to 3 A continuous. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking


    Original     		FZT749 OT-223 OT-223 FZT749 PDF