CR50TEA
Abstract: CR50TEB CR50TEF photodiode and phototransistor CST10 CR50PD
Text: PHOTO-DIODES, TRANSISTORS & DARLINGTON STANDARD, SIDE BEAM AND LARGE AREA • A DIVERSE RANGE OF PHOTO-DIODES, PHOTO-TRANSISTORS AND PHOTO DARLINGTONS • USEFUL FOR MANY OPTICAL SENSE AND DETECTION APPLICATIONS, VARIOUS ACTIVE AREA SIZES • PHOTO-DARLINGTON OFFERS SUPER HIGH SENSITIVITY FOR LOW LIGHT CONDITION
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CR15BP
CR15TEB
CR50PD
178mm
330mm
CR50TEA
CR50TEB
CR50TEF
photodiode and phototransistor
CST10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET OLH2047/OLH2048/OLH2049: Photo-Transistor Hermetic Optocouplers Features • Current Transfer Ratio CTR guaranteed over –55 °C to +100 °C ambient temperature range • 2500 V electrical isolation • Standard 8-pin DIP configuration • High CTR at low input current
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OLH2047/OLH2048/OLH2049:
OLH2047,
OLH2048,
OLH2049
202294B
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Wheatstone Bridge operational amplifier
Abstract: n-channel jfet amplitude control AD620 VOLTAGE TO CURRENT CONVERTER dual jfet transistor array AMPLI DUAL CV 60 Wheatstone Bridge amplifier half bridge inverter schematic operation of ad620 instrumentation amplifier AMPLI DUAL CV 120 datasheet and application AD620
Text: a FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 µA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V/µs No Phase Reversal APPLICATIONS Photo Diode Preamplifier
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AD824
Wheatstone Bridge operational amplifier
n-channel jfet amplitude control
AD620 VOLTAGE TO CURRENT CONVERTER
dual jfet transistor array
AMPLI DUAL CV 60
Wheatstone Bridge amplifier
half bridge inverter schematic
operation of ad620 instrumentation amplifier
AMPLI DUAL CV 120
datasheet and application AD620
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TRANSISTOR C 6090 lg
Abstract: TRANSISTOR C 6090 TC1101 8484 au
Text: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz
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TC1101
TC1101
TRANSISTOR C 6090 lg
TRANSISTOR C 6090
8484 au
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TC2181
Abstract: TC1101 0736 27319
Text: TRANSCOM TC2181 January 2002 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES • 0.5 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT • High Associated Gain: Ga = 12 dB Typical at 12 GHz • 18 dBm Typical Power at 12 GHz • 13 dB Typical Linear Power Gain at 12 GHz
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TC2181
TC2181
TC1101
ELECTRICAL98
0736
27319
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LS7217
Abstract: LDR 03 PHOTO RESISTOR photo resistor LDR 3 Q12N3904 nsl-19m51
Text: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor
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LS7217
LS7217-S
470pF
1N4004
2N2222
LS7217
LDR 03 PHOTO RESISTOR
photo resistor LDR 3
Q12N3904
nsl-19m51
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Q12N3904
Abstract: No abstract text available
Text: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor
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LS7217
LS7217-S
1N4004
2N2222
ICM7555
LS7217
Q12N3904
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Q12N3904
Abstract: No abstract text available
Text: LSI/CSI LS7217 LSI Computer Systems, Inc. 1235 Walt Whitman Road, Melville, NY 11747 631 271-0400 FAX (631) 271-0405 PHOTO CONTROLLED OUTDOOR LIGHTING WITH PROGRAMMABLE TIMER FEATURES: • Input interface to a LDR or a photo transistor
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LS7217
LS7217-S
1N4004
2N2222
ICM7555
LS7217
Q12N3904
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Untitled
Abstract: No abstract text available
Text: 8 PIN DIP HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER 6N135 6N136 EL450x Series Schematic 6N135 / 6N136 Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C
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6N135
6N136
EL450x
6N136
EL4502
EL4503
DPC-0000112
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AC ammeter diagram
Abstract: TRANSIMPEDANCE mmic photo amplifier application circuit transimpedance amplifier 10 GHz cd photo diode shunt resistor tia amplifier ghz TRANSIMpedance Amplifier SFT-0100 STM-64
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device
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SFT-0100
SFT-0100
30KHz
EDS-102714
AC ammeter diagram
TRANSIMPEDANCE mmic
photo amplifier application circuit
transimpedance amplifier 10 GHz
cd photo diode
shunt resistor
tia amplifier ghz
TRANSIMpedance Amplifier
STM-64
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Sirenza AN-21
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10/12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device
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SFT-0100
SFT-0100lied.
30KHz
EDS-102714
Sirenza AN-21
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Untitled
Abstract: No abstract text available
Text: AMOS TECHNOLOGY LIMITED R4a MM216 LIGHT-SENSE ASIC by external photo transistor DATA SHEET FEATURES • • • • • • • • Wide battery operating voltage range : 3.3V to 5.1V. Typical operating current : 150uA, VDD = 4.5V. Trigger pulse with controlled width on valid detection
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MM216
150uA,
50/60Hz)
MM216
125ms.
500ms
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Gan photo diode
Abstract: SFT-0100 at-1012 transistor PRBS31 STM-64 bjt differential amplifier
Text: SFT-0100 SFT-0100Transimpedance Amplifier TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-0100 is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 10 Gb/s and 12.5 Gb/s SONET/SDH applications. The SFT-0100 uses high FT indium gallium phosphide device technology that
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SFT-0100
SFT-0100Transimpedance
SFT-0100
EDS-102714
Gan photo diode
at-1012 transistor
PRBS31
STM-64
bjt differential amplifier
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SY7066
Abstract: d824a
Text: ANALOG ► DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 ^iA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V/^s No Phase Reversal APPLICATIONS Photo Diode Preamplifier
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AD824
AD824
-01sa(
SY7066
d824a
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Untitled
Abstract: No abstract text available
Text: N E C t,4S7SHS 002^ 57^ 4 BQE D ELECTRONICS INC T - M r l'ip i r PHOTO TRANSISTOR PH102 NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR DESCRIPTION The PH102 is a miniature NPN sillicon pnototransistor having exceptionally stable characteristics mounted in a
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PH102
PH102
1000nm,
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OC401
Abstract: No abstract text available
Text: O K I electronic components OC401 PHOTO COUPLER GENERAL DESCRIPTION The C C40 is a combination of a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package and ensures dielectric voltage of 2,500 V. FEATURES • High-speed response : 140 ns
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OC401
OC401
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Untitled
Abstract: No abstract text available
Text: MARKTECH INTERNATIONAL 571^55 1ÔE D DGGQ527 1 PHOTO IC COUPLER T -4 1 - S 3 MT6500, MT6510 Unit in mm inches APPLICATIONS • • • • • DIGITAL LOGIC ISOLATION LINE RECEIVER FEEDBACK CONTROL POWER SUPPLY CONTROL SWITCHING POWER SUPPLY TRANSISTOR INVERTOR
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DGGQ527
MT6500,
MT6510
MT6500
MT6510
QQG0S33
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Untitled
Abstract: No abstract text available
Text: NEC PHOTO TRANSISTOR ELECTRON DEVICE P H I 02 NPN EPITAXIAL PHOTOTRANSISTOR PHOTO DETECTOR -NEPOC SERIES- DESCRIPTION The PH102 is a m iniature NPN sillicon phototransistor having exceptionally stable characteristics mounted in a tw o-term inal M IC R O D IS K package. The spectral response, extending fro m 400 to 1000nm , is com patible w ith
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PH102
1000nm
PH102
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Untitled
Abstract: No abstract text available
Text: INFRARED LED + PHOTO TRANSISTOR • * . l- \ M \ - TLP1230 C4 /(C5) (T L P 1 2 3 0 (C 4 ) COPIER, LASER BEAM PRINTER, LED PRINTER U nit in mm TLP1230 (C4) FACSIMILE, PRINTER, ELECTRONIC TYPEWRITER 4 - R ( 0.5 ) AUTOMATIC VENDING MACHINE, TERMINAL
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TLP1230
TLP1230
ti72SG
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MT25300
Abstract: MT25310 OGDQ544 V0IF MT253
Text: MARKTECH INTERNATIONAL STTIbSS QOQOSBi 5 IflE D PHOTO IC COUPLER MT25300, MT25310 T 4 I - & 3 Unit In mm Inches APPLICATIONS • DIGITAL LOGIC ISOLATION • LINE RECEIVER • POWER SUPPLY CONTROL • SWITCHING POWER SUPPLY • TRANSISTOR INVERTER The MARKTECH MT25300 and MT25310 dual
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MT25300,
MT25310
MT25300
MT25310
Ta-25
lp-16mA
OGDQ544
V0IF
MT253
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OC40 PHOTO COUPLER GENERAL DESCRIPTION The 0 0 4 0 is a photo coupler, which combines a GaAs infrared light emission diode and a photo transistor. It is mounted in a 6-pin plastic package. With a response as fast as 100ns. FEATURES
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100ns.
Outpu18
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PH101
Abstract: No abstract text available
Text: SEC PHOTO TRANSISTOR ELECTRON DEVICE PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
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PS401
Abstract: C426 QQE33 0D04t
Text: A C IN T E R F A C E IN C ID E D | 0023303 . SlAHLEY □ O D G M b 'l - fl | PS401 STANLEY PHOTO TRANSISTOR Dimensions • FEATURES 1 Wide range o f spectral wavelength covering visible light (red) to infrared light (2) High directivity
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0D04t
PS401
QQE33
DD0D471
PS401
C426
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Untitled
Abstract: No abstract text available
Text: ¡i, PHOTO TRANSISTOR w- HÿJTÏEÎJi W .W E PH101 NPN EPITAXIAL DARLINGTON PHOTOTRANSISTOR PHOTO DETECTOR -• -N E P O C SERIES - DESCRIPTION The PH101 is a miniature NPN sillicon phototransistor having exceptionally stable characteristics and high illuminance sensiti
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PH101
PH101
J22686
LC-1027A
-1-77M
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