LOW POWER SRAM 64K Search Results

LOW POWER SRAM 64K Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN

LOW POWER SRAM 64K Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MoSys Abstract: MC803128K32 pipeline burst Text: MC803128K32 128Kx32 Pipeline Burst SRAM MOSYS • High performance, low power pipeline burst SRAM Overview The MoSys MC803128K32 is a high performance, low power pipeline-burst-SRAM PBSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC803128K32 is	Original	MC803128K32 128Kx32 MC803128K32 32Kx32 64Kx32 32Kx32, 64Kx32, MoSys pipeline burst	PDF
GVT7164B36 Abstract: 7164b36 Text: GALVANTECH, INC. GVT7164B36 64K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM 64K x 36 SRAM +3.3V POWER SUPPLY, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family employs high-speed, low power CMOS designs using	Original	GVT7164B36 GVT7164B36 536x36 7164B36 access/10ns access/11ns access/15ns	PDF
AS6C1016 Abstract: sram 64k 64k x 8 sram Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply	Original	AS6C1016 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, sram 64k 64k x 8 sram	PDF
AS6C1016 Abstract: AS6C1016-55ZIN Text: OCTOBER 2007 January 2007 AS6C1016 X8 BIT SRAM LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER CMOS FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20/18mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply	Original	AS6C1016 20/18mA 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, AS6C1016-55ZIN	PDF
S1D13501 Abstract: QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103 Text: PF1227-01 S1X50000 Series S1X50000 Series High Speed/Low Power Embedded Array ● 1P SRAM/2P SRAM/Mask ROM mounted ● Two types available: High-speed type and the low-power-consumption cell type ● Eight models available with different sizes of SRAM/MaskROM	Original	PF1227-01 S1X50000 S1D13501 QFP14-80 MASKROM QFP14-80 epson TQFP15-100 S1L50000 S1X55033 S1X55053 S1D13502 S1X55103	PDF
M48Z59 Abstract: M48Z59Y SOH28 Text: M48Z59 M48Z59Y 64Kb 8K x 8 ZEROPOWER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION	Original	M48Z59 M48Z59Y M48Z59: M48Z59Y: 28-LEAD M48Z59/59Y non75V PCDIP28 SOH28 AI01181B M48Z59 M48Z59Y SOH28	PDF
M48Z59 Abstract: M48Z59Y SOH28 AI00962 Text: M48Z59 M48Z59Y 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY MICROPROCESSOR POWER-ON RESET (Valid even during battery back-up mode) AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES	Original	M48Z59 M48Z59Y M48Z59: M48Z59Y: 28-LEAD M48Z59/59Y M48Z59 M48Z59Y SOH28 AI00962	PDF
Untitled Abstract: No abstract text available Text: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit	Original	HY62UF16101 64Kx16bit 16bit. 48ball I/O16 5M-1994.	PDF
Untitled Abstract: No abstract text available Text: HY62SF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62SF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100 uses high performance full CMOS process technology and designed for high speed low power circuit	Original	HY62SF16100 64Kx16bit 16bit. 48ball 5M-1994.	PDF
Untitled Abstract: No abstract text available Text: M48Z58 M48Z58Y 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES (VPFD = Power-fail Deselect Voltage):	Original	M48Z58 M48Z58Y M48Z58: M48Z58Y: 28-LEAD M48Z58/58Y	PDF
HY62UF16101LLM Abstract: No abstract text available Text: HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit	Original	HY62UF16101 64Kx16bit 16bit. HY62UF16101-I 48ball 5M-1994. HY62UF16101LLM	PDF
Untitled Abstract: No abstract text available Text: HY62UF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16100 uses high performance full CMOS process technology and designed for high speed low power circuit	Original	HY62UF16100 64Kx16bit 16bit. 70/85/ON 48ball 5M-1994.	PDF
Untitled Abstract: No abstract text available Text: HY62QF16100 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16100 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100 uses high performance full CMOS process technology and designed for high speed low power circuit	Original	HY62QF16100 64Kx16bit 16bit. 85/ON 48ball 5M-1994.	PDF
M48T59 Abstract: M48T59Y SOH28 Text: M48T59 M48T59Y 64Kb 8K x 8 TIMEKEEPER SRAM INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY FREQUENCY TEST OUTPUT for REAL TIME CLOCK AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES	Original	M48T59 M48T59Y M48T59: M48T59Y: 28-LEAD M48T59 M48T59Y SOH28	PDF

Untitled Abstract: No abstract text available Text: High Speed Super Low Power SRAM CS16LV10243 64K-Word By 16 Bit Revision History Rev. No. 1.0 History Initial issue 1 Issue Date Jan.17,2005 Remark Rev. 1.0 Chiplus reserves the right to change product or specification without notice. High Speed Super Low Power SRAM	Original	CS16LV10243 64K-Word CS16LV10243 16bits 55/70ns	PDF
DS1225 circuit diagram Abstract: DS1225 M48Z08 M48Z18 SOH28 DS1225 date code Text: M48Z08 M48Z18 64Kb 8K x 8 ZEROPOWER SRAM INTEGRATED ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY UNLIMITED WRITE CYCLES READ CYCLE TIME EQUALS WRITE CYCLE TIME AUTOMATIC POWER-FAIL CHIP DESELECT and WRITE PROTECTION WRITE PROTECT VOLTAGES	Original	M48Z08 M48Z18 M48Z08: M48Z18: DS1225 PCDIP28 SOH28ication DS1225 circuit diagram M48Z08 M48Z18 SOH28 DS1225 date code	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY I^ IIC R O N MT8LS6432 64K X 32 SRAM MODULE SRAM MODULE 64K X 32 SRAM LOW VOLTAGE FEA TU RES High speed: 15,20 and 25ns High-performance, low-power CMOS process Single +3.3V + 0.3V power supply _ _ 5V-tolerant I /O Easy memory expansion with CE and OE options	OCR Scan	MT8LS6432 64-Pin DD10543 MT6LSG432	PDF
Untitled Abstract: No abstract text available Text: JUL i 4 ’«S3 PRELIMINARY MICRON I 64K St MíCOKUlICIOR MC SRAM MODULE X MT8LS6432 32 SRAM MODULE 64Kx 32 SRAM LOW VOLTAGE FEATURES • • • • • • • • High speed: 17,20,25, 30 and 35ns High-performance, low-power CMOS process Single +3.3V ± 0.3V power supply	OCR Scan	MT8LS6432 64-Pin 64-pins MTILS6432 C1993.	PDF
Untitled Abstract: No abstract text available Text: M T5LC 2564 64K X 4 SRAM \|V/\|ICRON 64K X 4 SRAM SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • High speed: 1 2,15, 20, 25 and 35ns • High-perform ance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply	OCR Scan	24-Pin T5LC2564 MT5LC2564	PDF
Untitled Abstract: No abstract text available Text: M IC R D N I MT5LC2565 64K X 4 SRAM SEMICONDUCTOR TIC SRAM 64K x 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/ O pins are 5V tolerant • High speed: 1 2 ,1 5 ,2 0 and 25 • High-performance, low-power, CM OS double-metal process • Single +3.3V ±0.3V power supply	OCR Scan	MT5LC2565 28-Pin	PDF
Untitled Abstract: No abstract text available Text: MC80464K32, MC804128K3? 64Kx32, 128Kx32 Flow-Through ❖ M o Sys* Synchronous Burst SRAM * High performance, low power flofr-through SRAM • Ultra low power for high capacity applications * High performance • 50-83 MHz Speed grades • 2-1-1-1 Burst Read	OCR Scan	MC80464K32, MC804128K3? 64Kx32, 128Kx32	PDF
Untitled Abstract: No abstract text available Text: M IC R O N I 64K ¿FUICQNDUCTOR INC SRAM MT5C2565 X 4 SRAM 64K X 4 SRAM FEATURES • High speed: 10,12,15,20 and 25 • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options	OCR Scan	MT5C2565 28-Pin G0102b4	PDF
A1526 Abstract: 64K X 4 SRAM Text: M T5LC2565 64K X 4 SRAM M IC R O N SRAM 64K X 4 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 1 2 ,15,20,25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +3.3V +0.3V power supply • Easy memory expansion with CE and OE options	OCR Scan	T5LC2565 28-Pin MT51C2565 MT5LC2565 A1526 64K X 4 SRAM	PDF
Untitled Abstract: No abstract text available Text: MICRON TECHNOLOGY INC SSE D I^ IIC Z R O N blllSMT 0003T73 bT3 64K SRAM MODULE X IMRN MT4S6416 16 SRAM MODULE 64Kx 16 SRAM FEATURES • High speed: 20*, 25 and 30ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply	OCR Scan	0003T73 MT4S6416 40-pin	PDF

LOW POWER SRAM 64K Search Results

LOW POWER SRAM 64K Result Highlights (5)

LOW POWER SRAM 64K Datasheets Context Search

MoSys

GVT7164B36

AS6C1016

AS6C1016

S1D13501

M48Z59

M48Z59

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HY62UF16101LLM

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M48T59

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DS1225 circuit diagram

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A1526

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