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    LOW NOISE TRANSISTORS MICROWAVE Search Results

    LOW NOISE TRANSISTORS MICROWAVE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE TRANSISTORS MICROWAVE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package


    Original     		PDF MMBR911MLT1 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-1.4GHz EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package


    Original     		PDF MMBR5179LT1 MMBR5179LT1 200MHz OT-23

    MMBR911LT1

    Abstract: MMBR911MLT1
    Text: MMBR911MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package


    Original     		PDF MMBR911MLT1 MMBR911MLT1 MMBR911LT1 MMBR911LT1

    MMBR5179LT1

    Abstract: No abstract text available
    Text: MMBR5179LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-4.5dB@200MHz ! Low cost SOT23 package


    Original     		PDF MMBR5179LT1 MMBR5179LT1 200MHz

    MMBR901

    Abstract: MRF9011LT1 MRF9011MLT1 MMBR901MLT1
    Text: MMBR901MLT1/MRF9011MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR901LT1/MRF9011LT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.8dB@1GHz ! Low cost SOT23/SOT143


    Original     		PDF MMBR901MLT1/MRF9011MLT1 MMBR901LT1/MRF9011LT1 OT23/SOT143 MMBR901 MRF9011LT1 MRF9011MLT1 MMBR901MLT1

    MRF9411MLT1

    Abstract: No abstract text available
    Text: MMBR941MLT1/MRF9411MLT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR941MLT1/MRF9411MLT1 are low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-1.3dB@1GHz ! Low cost SOT23/SOT143


    Original     		PDF MMBR941MLT1/MRF9411MLT1 MMBR941MLT1/MRF9411MLT1 OT23/SOT143 MMBR941LMT1/MRF9411MLT1 MRF9411MLT1

    Untitled

    Abstract: No abstract text available
    Text: MMBR5179LT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The MMBR5179LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-4.5dB@200MHz  Low cost SOT23 package


    Original     		PDF MMBR5179LT1 MMBR5179LT1 200MHz

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		PDF 5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com


    Original     		PDF MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF BFR92ALT1 BFR92ALT1 500MHz

    Untitled

    Abstract: No abstract text available
    Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF MMBR911LT1 MMBR911LT1 MMBR911MLT1

    Untitled

    Abstract: No abstract text available
    Text: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages.  Low noise-3.0dB@500MHz  Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com


    Original     		PDF BFR92ALT1 BFR92ALT1 500MHz

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF 5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    Original     		PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500

    Untitled

    Abstract: No abstract text available
    Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features • Designed for Battery Operation • f T to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages and


    Original     		PDF MP4T6365 MP4T6365 OT-143 MP4T636539

    2SC2149

    Abstract: 2SC2148 micro X
    Text: DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS encapsulated into new hermetic stripline packages, "micro X".


    Original     		PDF 2SC2148, 2SC2149 2SC2149 2SC2148 micro X

    2N2857

    Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
    Text: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels


    Original     		PDF 2N2857 MIL-MRF19500 2N2857 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		PDF ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686

    MA4T64500

    Abstract: 4558 MA4T64535 557 sot143 micro X
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV


    OCR Scan     		PDF 4T64500 MA4T64533 MA4T64535 OT-23 MA4T64539 OT-143 MA4T645XX OT-143) MA4T64500 4558 MA4T64535 557 sot143 micro X

    MRFC572

    Abstract: MRF572 MRF671 vk200* FERROXCUBE MRF571
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF571 MRF572 MRFC572 The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, w ide dynamic range front end am­ plifiers, low noise VCO's, and microwave power multipliers. • Low Noise • High Gain


    OCR Scan     		PDF MRF571 MRF572 MRFC572 MRF671 MRF572 MRFS72 MRF571, MRF572, MRFC572 MRF671 vk200* FERROXCUBE

    BFG55A

    Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
    Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60

    vk200* FERROXCUBE

    Abstract: MRF571
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors . designed for low-noise, wide dynamic range front end amplifiers, low-noise V C O ’s, and microwave power multipliers. • Low Noise • High Gain fT = 8.0 GHZ @ 50 mA


    OCR Scan     		PDF MRF571 VK-200, 56-590-65/3B vk200* FERROXCUBE

    26-13 transistor sot-23

    Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
    Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages


    OCR Scan     		PDF MA4T6365XX MA4T636535 MA4T636539 OT-143 26-13 transistor sot-23 micro X Silicon Bipolar Transistor Micro-X Ceramic