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    LOW NOISE HIGH FREQUENCY Search Results

    LOW NOISE HIGH FREQUENCY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5754H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5751H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5752H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-speed / High-Topr, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    DCL542H01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE HIGH FREQUENCY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


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    FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz PDF

    FPD6836P70

    Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


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    FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p PDF

    FPD7612P70

    Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


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    FPD7612P70 FPD7612P70 22dBm 85GHz 18GHz 11GHz) PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the


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    MGA-637P8 MGA-637P8 CDMA2000x) AV02-2992EN PDF

    MGA653

    Abstract: QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8
    Text: MGA-635P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-635P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-635P8 MGA-635P8 75mm3 450MHz AV02-2545N MGA653 QFN PACKAGE Junction to PCB thermal resistance 633p MGA633 643p MGA-643P8 PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-634P8 MGA-634P8 75mm3 AV02-2544N PDF

    MGA-634P8-BLKG

    Abstract: mga633p8 MCR01MZS
    Text: MGA-634P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-634P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-634P8 MGA-634P8 75mm3 450MHz AV02-2544N MGA-634P8-BLKG mga633p8 MCR01MZS PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN PDF

    MGA-633P8

    Abstract: No abstract text available
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN PDF

    NJG1117

    Abstract: 03806 NJG1117HA8 MLK0603
    Text: NJG1117HA8 GPS LOW NOISE AMPLIFIER GaAs MMIC Q GENERAL DESCRIPTION This IC is a Low noise amplifier GaAs MMIC designed for GPS. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier can be tuned to wide frequency point


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    NJG1117HA8 575GHz 575GHz 5751GHz NJG1117 03806 NJG1117HA8 MLK0603 PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN PDF

    Untitled

    Abstract: No abstract text available
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN PDF

    NEC 2581

    Abstract: nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


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    2SC4954 2SC4954-T2 2SC4954-T1 NEC 2581 nec 2405 2581 NEC zo 103 ma 75 607 30460 pulse 01940 9590 IC 2030 PIN CONNECTIONS 5598 transistor 2SC4954-T1 PDF

    NEC 2581

    Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05


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    2SC4954 2SC4954-T1 NEC 2581 nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821 PDF

    MGA-633P8

    Abstract: CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8
    Text: MGA-633P8 Ultra Low Noise, High Linearity Active Bias Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-633P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . The LNA has low noise and high linearity achieved through the use of


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    MGA-633P8 MGA-633P8 75mm3 450MHz AV02-2329EN CM05CH330J50AH RM73B1ETTP100J mga-633p8-tr1g mga 633p8-blkg GRM1555C1H101JD01 MGA633P8 PDF

    2SC4958

    Abstract: nec 473
    Text: DATA SHEET SILICON TRANSISTOR 2SC4958 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • • • PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance


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    2SC4958 2SC4958) 2SC4958 nec 473 PDF

    nec 2410

    Abstract: transistor marking T83 ghz 2SC4959 63950 2SC4959-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance 1.25 ± 0.1


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    2SC4959 2SC4959 nec 2410 transistor marking T83 ghz 63950 2SC4959-T1 PDF

    PC4574C

    Abstract: 4574C uPC4574 4574g PC4574 UPC4574C
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC4574 QUAD ULTRA LOW-NOISE, WIDEBAND, OPERATIONAL AMPLIFIER DESCRIPTION The µPC4574 is an ultra low noise, high slew rate quad operational amplifier specifically designed for audio, instrumentation, and communication circuits. The low noise and high frequency capabilities make it ideal for preamps and


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    PC4574 PC4574 PC4574C PC4574C PC4574G2 PC4574G2 14-pin 4574C uPC4574 4574g UPC4574C PDF

    IC nec 555

    Abstract: ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1
    Text: DATA SHEET SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2.8±0.2 +0.1 0.4 –0.05


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    2SC4955 2SC4955-T2 2SC4955-T1 IC nec 555 ic 7490 marking 691 ic 7490 data sheet nec 7604 4440 audio amplifier Datasheet of 7490 IC ic 7490 description 2SC4955 2SC4955-T1 PDF

    A004R

    Abstract: ALM1322 ALM-1322 RO4350
    Text: ALM-1322 1.8-2.2GHz Very Low Noise High Gain Balanced Amplifier Module Data Sheet Description Features Avago Technologies’ ALM-1322 is a very low noise, high gain balanced amplifier module operating in the 1.8 to 2.2GHz frequency range. The exceptional noise


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    ALM-1322 ALM-1322 ALM1322 22-lead ALM-1322-BLKG ALM-1322-TR1G A004R RO4350 PDF

    1512

    Abstract: Input Stages Preamplifiers 1510/1512
    Text: Low-Noise, High Performance Audio Preamplifier IC THAT 1510, 1512 FEATURES APPLICATIONS • Low Noise: 1 nV/√Hz input noise 60dB gain 34 nV/√Hz input noise (0dB gain) (1512) • Differential Low Noise Preamplifiers • Low THD+N (full audio bandwidth):


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    14-pin 1512 Input Stages Preamplifiers 1510/1512 PDF

    RAYTHEON SEMICONDUCTOR

    Abstract: SS34A
    Text: _RC5534/5534A RC5534/5534A High Performance Low Noise Operational Amplifier Description Features The 5534 is a high performance, low noise operational amplifier. This amplifier features popular pin-out, superior noise performance, and high output drive


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    RC5534/5534A RC5534/5534A RAYTHEON SEMICONDUCTOR SS34A PDF

    ta 306

    Abstract: 2SC1199 TA306
    Text: 2SC1199 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. 09.39MAK HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. .08 .4 5MAX . tzrzrn FEATURES: . Low Noise for High and Low Frequency : N F = 4 .O d B M a x .


    OCR Scan
    2SC1199 39MAK 200MHz 10kHz -10mA, -30mA, ta 306 2SC1199 TA306 PDF

    pulse 01940

    Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
    Text: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2


    OCR Scan
    2SC4954 4954-T sh527 pulse 01940 NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460 PDF